Project/Area Number |
21K04883
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
|
Research Institution | Kyushu University |
Principal Investigator |
|
Project Period (FY) |
2021-04-01 – 2024-03-31
|
Project Status |
Granted (Fiscal Year 2022)
|
Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2023: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2022: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2021: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
|
Keywords | 2D materials / silicon carbide / honeycomb lattice / spin-orbit interaction / surface physics / 2D material / nitride / SiC / spintronics |
Outline of Research at the Start |
The traditional electronic devices which are relying on electron transport are reaching their fundamental limits. Thus materials which may convey information via completely different means (ex. electron spin rather than charge) are in demand. Graphene-like 2D materials with honeycomb atomic structure, but consisting of heavy elements, like Pb, Sb, or Bi, are predicted to exhibit such a unique opportunity. Their synthesis however, have been unsuccessful until now. In our research we intend to utilize a unique substrate engineering approach which may favor the growth of such exotic 2D layers.
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Outline of Annual Research Achievements |
(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements. (2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface. (3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.
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Current Status of Research Progress |
Current Status of Research Progress
3: Progress in research has been slightly delayed.
Reason
The experimental part of the project is experiencing delays due to unexpected technical problems with equipment both on home research base and collaborators sites. Experiments themselves also take slightly longer time than anticipated. Although computational part of the project proceeds successfully, various specific properties state-of-the-art (magnetization, spin-polarized bands) calculations takes a bit more time than expected due to lack of computational power on hands.
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Strategy for Future Research Activity |
(1) Finally start the growth of honeycomb Xenes on top of silicon nitride layer. As the implementation of this phase has been delayed due to various reasons. We will try to concentrate extensively on the growth and characterization to achive the goals of the project. (2) Further delving into calculation options. Because the experiment is shifted to later phase, and there is always a risk of additional complication, we will try to heavily invest efforts into calculations, as this would prove useful even in the case of experiment failure.
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