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Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substrates

Research Project

Project/Area Number 21K04900
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 30010:Crystal engineering-related
Research InstitutionUniversity of Yamanashi

Principal Investigator

Arimoto Keisuke  山梨大学, 大学院総合研究部, 准教授 (30345699)

Co-Investigator(Kenkyū-buntansha) 山中 淳二  山梨大学, 大学院総合研究部, 准教授 (20293441)
澤野 憲太郎  東京都市大学, 理工学部, 教授 (90409376)
Project Period (FY) 2021-04-01 – 2024-03-31
Project Status Completed (Fiscal Year 2023)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2023: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2022: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2021: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords歪みシリコン / 界面準位 / 高移動度トランジスタ / 集積回路 / シリコン・ゲルマニウム / 結晶欠陥 / MOSFET
Outline of Research at the Start

デジタル社会を支える様々な電子機器は多くの半導体集積回路から成り立っている。半導体集積回路の更なる高集積化・高性能化・消費電力低減を実現するため、半導体材料の高移動度化が求められている。その方法の一つとしてエネルギーバンド構造を結晶格子歪みによってコントロールする歪みエンジニアリングがある。申請者は(110)面を表面方位とするシリコン(Si)に応力を印加することで正孔移動度を大幅に向上できることを実証してきた。本研究では (110)面上歪みヘテロ構造における酸化膜/半導体界面準位の特性を明らかにする。界面準位を低減することで、正孔移動度の更なる向上が期待できる。

Outline of Final Research Achievements

Further improvement in carrier mobility in semiconductors is required to achieve further performance improvement and power reduction of integrated circuits. A significantly high hole mobility has been reported in strained Si films with a (110) surface. For device applications of this thin film, it is important to reduce the interface trap density to suppress threshold voltage fluctuations and further improve the carrier mobility. In this study, we clarified that the interface trap density between the gate oxide layer and the (110)-oriented strained Si film formed on a SiGe layer has a high correlation with the surface roughness on the strained Si layer.

Academic Significance and Societal Importance of the Research Achievements

(110)面を表面とする歪みシリコン膜は高い正孔移動度を示すことが分かっているが、表面粗さが大きいことから、界面準位密度が高いことが示唆されていた。本研究では、(110)基板上の歪みシリコン/シリコン・ゲルマニウム構造の界面準位密度の評価を行い、表面ラフネスとの相関を明らかにした。また、格子歪みと平坦性の両立に関して更なる最適化の余地があること、それにより移動度の更なる向上を見込めることが示唆された。これらの研究結果は、次世代先端ロジック集積回路の開発に向けて有用な知見を与えるものである。

Report

(4 results)
  • 2023 Annual Research Report   Final Research Report ( PDF )
  • 2022 Research-status Report
  • 2021 Research-status Report
  • Research Products

    (20 results)

All 2024 2023 2022 2021 Other

All Journal Article (4 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 3 results) Presentation (15 results) (of which Int'l Joint Research: 7 results,  Invited: 3 results) Remarks (1 results)

  • [Journal Article] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates2023

    • Author(s)
      Keisuke Arimoto, Chihiro Sakata, Kosuke O. Hara, Junji Yamanaka
    • Journal Title

      Journal of Electronic Materials

      Volume: 52 Issue: 8 Pages: 5121-5121

    • DOI

      10.1007/s11664-023-10425-7

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures2023

    • Author(s)
      Fujisawa Taisuke、Onogawa Atsushi、Horiuchi Miki、Sano Yuichi、Sakata Chihiro、Yamanaka Junji、Hara Kosuke O.、Sawano Kentarou、Nakagawa Kiyokazu、Arimoto Keisuke
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 161 Pages: 107476-107476

    • DOI

      10.1016/j.mssp.2023.107476

    • Related Report
      2022 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM2022

    • Author(s)
      Yamanaka Junji、Oguni Takuya、Sano Yuichi、Ohshima Yusuke、Onogawa Atsushi、Hara Kosuke O、Arimoto Keisuke
    • Journal Title

      Microscopy and Microanalysis

      Volume: 28 Issue: S1 Pages: 2812-2813

    • DOI

      10.1017/s1431927622010601

    • Related Report
      2022 Research-status Report
  • [Journal Article] Discrimination between Coherent and Incoherent Interfaces using STEM Moire2021

    • Author(s)
      Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto, Mai Shirakura, Kosuke Hara, Keisuke Arimoto
    • Journal Title

      Microscopy and Microanalysis

      Volume: 27 Issue: S1 Pages: 2326-2327

    • DOI

      10.1017/s1431927621008369

    • Related Report
      2021 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] (110)-surface strained-channel MOSFETs2024

    • Author(s)
      Keisuke Arimoto
    • Organizer
      ECS PRiME2024
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 歪みSi/SiGe/Si(110)MOS構造の界面準位密度の評価2023

    • Author(s)
      青沼 雄基、藤澤 泰輔、堀内 未希、吉川 満希、山中 淳二、原 康祐、中川 清和、有元 圭介
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] 歪み Si/SiGe/Si(110)ヘテロ構造への in-situ Sb ドーピングプロセスの検討2023

    • Author(s)
      河村 剛登、原 康祐、山中 淳二、中川 清和、有元 圭介
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] 2段集束レンズTEMを用いたNBDによるSiGeと歪Siの面間隔評価2022

    • Author(s)
      山中淳二,小國琢弥,佐野雄一,大島佑介,各川敦史,原康祐,有元圭介
    • Organizer
      日本顕微鏡学会 第78回学術講演会
    • Related Report
      2022 Research-status Report
  • [Presentation] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates2022

    • Author(s)
      Chihiro Sakata, Keisuke Arimoto, Kosuke O Hara, Junji Yamanaka
    • Organizer
      19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Lattice-Spacing of Si and SiGe by NBD using conventional TEM2022

    • Author(s)
      Junji Yamanaka, Takuya Oguni, Joji Furuya, Kosuke O. Hara, Keisuke Arimoto
    • Organizer
      19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research
  • [Presentation] Strain Engineering for Enhancement of Hole Mobility in Silicon2022

    • Author(s)
      Keisuke Arimoto
    • Organizer
      9th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] NBD 回折円盤からの SiGe 面間隔測定における収束レンズ条件の影響2022

    • Author(s)
      古屋 丞司, 有元 圭介, 小國 琢弥, 原 康祐, 山中 淳二
    • Organizer
      日本顕微鏡学会第 65 回シンポジウム
    • Related Report
      2022 Research-status Report
  • [Presentation] 歪みSi/緩和 SiGe/Si(110)ヘテロ構造p-MOSFETの高正孔移動度化とリーク電流の低減2022

    • Author(s)
      藤澤 泰輔、各川 敦史、堀内 未希、坂田 千尋、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] Discrimination between Coherent and Incoherent Interfaces using STEM Moire2021

    • Author(s)
      Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto
    • Organizer
      Microscopy & Microanalysis 2021 Meeting
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Presentation] Strain and Defect Engineering for the (110)-Oriented Si pMOSFETs2021

    • Author(s)
      Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
    • Organizer
      International Conference on Materials Science and Engineering (Materials Oceania)
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] 2段集束レンズTEMを用いたNBDによるSi面 間隔評価の試行2021

    • Author(s)
      小國 琢弥 ,佐野 雄一 ,原 康祐 ,有元 圭介 ,山中 淳二
    • Organizer
      日本顕微鏡学会 第77回学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] 2段集束レンズ TEM を用いた NBD による SiGe 面間隔評価の試行2021

    • Author(s)
      小國 琢弥、佐野 雄一、大島 佑介、原 康祐、有元 圭介、山中 淳二
    • Organizer
      日本顕微鏡学会 第64回シンポジウム
    • Related Report
      2021 Research-status Report
  • [Presentation] Si/SiGe/Si(110) 内双晶分布の X 線回折と TEM による評価2021

    • Author(s)
      坂田 千尋、有元 圭介、各川 敦史、原 康祐、山中 淳二
    • Organizer
      日本顕微鏡学会 第64回シンポジウム
    • Related Report
      2021 Research-status Report
  • [Presentation] STEM-Moire Applications to Crystalline Specimens without using High-End Microscopes2021

    • Author(s)
      Junji Yamanaka, Chiaya Yamamoto, Kosuke O. Hara, Keisuke Arimoto
    • Organizer
      2nd Canada -Japan Microscopy Societies Symposium 2021
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Remarks] 中川・有元研究室ホームページ

    • URL

      https://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab/index.htm

    • Related Report
      2023 Annual Research Report

URL: 

Published: 2021-04-28   Modified: 2025-01-30  

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