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Control of metal contacts on polycrystalline Ge thin-film at low temperature

Research Project

Project/Area Number 21K14199
Research Category

Grant-in-Aid for Early-Career Scientists

Allocation TypeMulti-year Fund
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionKyushu University

Principal Investigator

Moto Kenta  九州大学, 総合理工学研究院, 特別研究員(PD) (70896191)

Project Period (FY) 2021-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2022: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2021: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywordsゲルマニウム / 多結晶 / 薄膜 / 金属コンタクト
Outline of Research at the Start

シーズである高移動度多結晶Ge薄膜の低温合成技術を実デバイスに応用するためには、金属/多結晶Geコンタクトの制御が必須となる。一般に金属/Geコンタクトでは、強いフェルミレベルピニング(FLP)が生じるため、ショットキー障壁の制御(オーム性、整流性)が困難である。この課題に対し、申請者の所属研究室は、単結晶Ge基板上において、金属との界面に窒素(N)添加非晶質Ge層を形成することで、FLP緩和を実現した。本研究では、申請者と所属研究室の独自シーズ技術を融合し、多結晶Geにおいて初となる金属コンタクトの低温制御を実現する。

Outline of Final Research Achievements

This study investigated the control of metal/polycrystalline (poly-) Ge contacts for applying poly-Ge to electronic devices. By sputter deposition of ZrN directly on poly-Ge, rectifying contacts with a low electron barrier on p-type poly-Ge are successfully formed for the first time. Furthermore, the nitrogen-containing amorphous layer formed at the ZrN/poly-Ge interface is the key to realize the low electron barrier. When the metals with various work functions were formed on the nitrogen-containing amorphous layer, rectifying characteristics reflected the metal work function. This result demonstrates that the Schottky barrier height, which is generally difficult to control in Ge, can be controlled on polycrystalline Ge and is a pioneering achievement for applying polycrystalline Ge to electronic devices.

Academic Significance and Societal Importance of the Research Achievements

高移動度でありながら低温合成可能な多結晶Geは、情報端末や太陽電池等の電子デバイスをガラスやプラスチック上等のあらゆる基材に作り込むことができる可能性を有する。そのデバイス応用に必要不可欠な金属/多結晶Geコンタクトに取り組む点に社会的意義がある。
一般に金属/Ge界面では、フェルミレベルピニング(FLP)と呼ばれる現象により、金属の仕事関数によらず高電子障壁を示してしまうため、p型Geでは整流性を得ることが難しい。本研究では、ZrNの直接スパッタ堆積を用いて多結晶p型Ge上での整流性(低電子障壁)の発現およびその障壁高さの制御を初めて実証しており、学術的意義も大きい。

Report

(3 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Research-status Report
  • Research Products

    (24 results)

All 2023 2022 2021 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (21 results) (of which Int'l Joint Research: 11 results,  Invited: 2 results) Remarks (1 results)

  • [Journal Article] Solid-phase crystallization of GeSn thin films on GeO2-coated glass2022

    • Author(s)
      T. Mizoguchi, T. Ishiyama, K. Moto, T. Imajo, T. Suemasu, and K. Toko
    • Journal Title

      phisica status solidi (RRL) - Rapid Research Letters

      Volume: 16 Issue: 1 Pages: 2100509-2100509

    • DOI

      10.1002/pssr.202100509

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Journal Article] Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors2021

    • Author(s)
      Moto Kenta、Yamamoto Keisuke、Imajo Toshifumi、Suemasu Takashi、Nakashima Hiroshi、Toko Kaoru
    • Journal Title

      IEEE Electron Device Letters

      Volume: 42 Issue: 12 Pages: 1735-1738

    • DOI

      10.1109/led.2021.3119014

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Presentation] Control of Schottky Barrier Height at Metal/Polycrystalline Ge Interfaces with Fermi Level Pinning Alleviation2023

    • Author(s)
      K. Moto, K. Toko, T. Takayama, T. Imajo, and K. Yamamoto
    • Organizer
      International Conference on Silicon Epitaxy and Heterostrucures International SiGe Technology and Device Meeting (ICSI-ISTDM 2023)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn2023

    • Author(s)
      K. Moto, K. Yamamoto, and K. Toko
    • Organizer
      13th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≦20 nm) by Post-Annealing for Thin-Film Transistor Application2023

    • Author(s)
      T. Koga, T. Nagano, K. Moto, K. Yamamoto, and T. Sadoh
    • Organizer
      THE 30th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD23)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 絶縁膜上におけるSn添加Ge薄膜の固相成長とTFT応用2023

    • Author(s)
      古賀 泰志郎、永野 貴弥、茂藤 健太、 山本 圭介、 佐道 泰造
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会(SDM)
    • Related Report
      2022 Annual Research Report
  • [Presentation] 高速薄膜トランジスタに向けたGeSn極薄膜の選択的核生成2023

    • Author(s)
      前田 真太郎、石山 隆光、山本 圭介、 末益 崇、都甲 薫
    • Organizer
      第70回応用物理学会春季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film2022

    • Author(s)
      K. Moto, K. Toko, T. Takayama, T. Imajo, and K. Yamamoto
    • Organizer
      2022 International Conference on Solid State Devices and Materials (SSDM 2022)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultra-thin Films for Advanced TFT2022

    • Author(s)
      T. Sadoh, T. Nagano, T. Koga, K. Moto, and K. Yamamoto
    • Organizer
      The 29th International Display Workshops (IDW '22)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Improved Carrier Mobility of Sn-Doped Ge Ultrathin (<50) Films on Insulator by a-Si Capping in Solid-Phase Crystallization2022

    • Author(s)
      T. Nagano, R. Hara, K. Moto, K. Yamamoto, and T. Sadoh
    • Organizer
      2022 International Conference on Solid State Devices and Materials (SSDM 2022)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (≦50 nm) on Insulator by a-Si Capping2022

    • Author(s)
      T. Nagano, R. Hara, K. Moto, K. Yamamoto, and T. Sadoh
    • Organizer
      9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication and evaluation of polycrystalline Ge-based thin-film transistors on glass2022

    • Author(s)
      T. Takayama, K. Moto, K. Yamamoto, T. Imajo,K. Toko
    • Organizer
      Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Novel group IV semiconductor materials and devices for beyond Si technology2022

    • Author(s)
      K. Yamamoto, T. Matsuo, D. Wang, K. Moto, K. Toko, and H. Nakashima
    • Organizer
      Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 多結晶p型Ge上におけるショットキー整流性コンタクトの形成2022

    • Author(s)
      茂藤 健太、都甲 薫、高山 智成、今城 利文、山本 圭介
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 金属/多結晶Ge界面におけるフェルミレベルピニングの緩和とショットキー障壁制御2022

    • Author(s)
      高山 智成、茂藤 健太、都甲 薫、王 冬、山本 圭介
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 界面変調型固相成長とポストアニールの重畳による Sn添加多結晶Ge極薄膜の高キャリア移動度化2022

    • Author(s)
      古賀 泰志郎、永野 貴弥、茂藤 健太、山本 圭介、佐道 泰造
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] Sn Doping Effects on Polycrystalline Germanium Thin-Film Transistors on Glass2021

    • Author(s)
      K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, and K. Toko
    • Organizer
      2021 International Conference on Solid State Devices and Materials (SSDM 2021)
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Presentation] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film2021

    • Author(s)
      T. Mizoguchi, T. Imajo, K. Moto, T. Suemasu, and K. Toko
    • Organizer
      2021 International Conference on Solid State Devices and Materials (SSDM 2021)
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Presentation] 固相成長GeSn 薄膜トランジスタにおけるSn 組成の影響2021

    • Author(s)
      茂藤健太,山本圭介,今城利文,末益崇,中島寛,都甲薫
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] 多結晶Ge 系薄膜における分光感度の初実証2021

    • Author(s)
      溝口拓士,茂藤健太,末益崇,都甲薫
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] a-Si キャップ付加による界面変調Sn 添加Ge 極薄膜/絶縁基板のキャリア移動度向上2021

    • Author(s)
      原龍太郎,千代薗修典,茂藤健太,山本圭介,佐道泰造
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] 多結晶Ge膜におけるアクセプタ欠陥低減と分光感度実証2021

    • Author(s)
      溝口拓士, 今城利文, 茂藤健太, 末益崇, 都甲薫
    • Organizer
      第12回半導体材料・デバイスフォーラム
    • Related Report
      2021 Research-status Report
  • [Presentation] 多結晶Ge-TFTの性能評価と粒界・方位制御技術2021

    • Author(s)
      石山隆光, 今城利文, 茂藤健太,山本圭介, 末益崇, 都甲薫
    • Organizer
      第12回半導体材料・デバイスフォーラム
    • Related Report
      2021 Research-status Report
  • [Remarks] 九州大学大学院 総合理工学府 総合理工学専攻 王研究室

    • URL

      https://www.gic.kyushu-u.ac.jp/functionaldevices/

    • Related Report
      2021 Research-status Report

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Published: 2021-04-28   Modified: 2024-01-30  

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