• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Reconsideration of interface science and engineering of silicon carbide-based metal-oxide-semiconductor interface

Research Project

Project/Area Number 21K18170
Research Category

Grant-in-Aid for Challenging Research (Pioneering)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 21:Electrical and electronic engineering and related fields
Research InstitutionOsaka University

Principal Investigator

Watanabe Heiji  大阪大学, 大学院工学研究科, 教授 (90379115)

Project Period (FY) 2021-07-09 – 2024-03-31
Project Status Completed (Fiscal Year 2023)
Budget Amount *help
¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
Fiscal Year 2023: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2022: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2021: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Keywords炭化珪素 / パワーデバイス / MOS構造 / 界面科学 / 炭化珪素半導体
Outline of Research at the Start

炭化珪素半導体パワーデバイスの研究開発が進み、SiC MOSFETの実用化に至っているが、その電界効果移動度はバルク移動度の数%に留まり、材料本来の特性を引き出しているとは言い難い。これは、SiO2/SiC界面に蓄積された電子の大部分が捕獲されFETのオン電流に寄与しない事に加え、従来のMOS界面科学では説明できない電子散乱が生じる為である。本研究では、SiO2/SiC界面に発現する特異な電子捕獲や散乱現象の解明に向け、SiC基板の酸化を伴わないMOS構造形成技術の構築や、微細デバイスの試作とその特性評価を通じて、SiC MOS界面の設計指針を獲得する。

Outline of Final Research Achievements

Silicon carbide (SiC) is a promising semiconductor material for power device applications, and SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are being implemented. However, a large number of defects exist at the interface between the SiC and the gate dielectric (MOS interface), leading to deteriorated device performance and poor long-term reliability. However, details of the interface defects have not yet been revealed, and the quality of SiC MOS interface needs to be further improved for the widespread implementation of SiC power devices. In this study, aiming at understanding the unique nature of the SiC MOS interface and establishing new guidelines for interface engineering, we explored a novel method for fabricating high-quality SiC MOS structure without oxidizing the SiC surface, and characterized specially designed SiC MOS devices for the analysis of interface properties.

Academic Significance and Societal Importance of the Research Achievements

熱酸化SiC MOS界面の欠陥については、酸化の進行に伴う炭素不純物の偏析に加えて、SiC半導体のエネルギーバンド構造の特異性を指摘する理論計算結果が報告されている。しかし、これらの影響を系統的に解き明かした報告は皆無であり、本研究は新規ヘテロ界面科学の再構築を目指す取り組みとして学術的にも大きな意義を有している。また、SiCパワーデバイスの高性能化と信頼性向上は、電気エネルギーの高効率利活用に貢献し、省エネ社会実現に向けた最重要課題として位置付けられる。

Report

(5 results)
  • 2023 Annual Research Report   Final Research Report ( PDF )
  • 2022 Research-status Report
  • 2021 Comments on the Screening Results   Research-status Report
  • Research Products

    (19 results)

All 2024 2023 2022 2021 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Open Access: 2 results) Presentation (14 results) (of which Int'l Joint Research: 7 results,  Invited: 4 results) Remarks (2 results)

  • [Journal Article] Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy2024

    • Author(s)
      Kobayashi Takuma、Suzuki Asato、Nakanuma Takato、Sometani Mitsuru、Okamoto Mitsuo、Yoshigoe Akitaka、Shimura Takayoshi、Watanabe Heiji
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 175 Pages: 108251-108251

    • DOI

      10.1016/j.mssp.2024.108251

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Design of SiO2/4H-SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing2023

    • Author(s)
      Kil Tae-Hyeon、Kobayashi Takuma、Shimura Takayoshi、Watanabe Heiji
    • Journal Title

      AIP Advances

      Volume: 13 Issue: 11 Pages: 115304-115304

    • DOI

      10.1063/5.0169573

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022

    • Author(s)
      T. Nakanuma, T. Kobayashi, T. Hosoi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura and H. Watanabe
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 4 Pages: 041002-041002

    • DOI

      10.35848/1882-0786/ac5ace

    • Related Report
      2021 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] 犠牲酸化プロセスによる SiC MOSFET の電気特性劣化2024

    • Author(s)
      八軒慶慈, 藤本博貴, 小林拓真, 平井悠久, 染谷満, 岡本光央, 志村考功, 渡部平司
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing2023

    • Author(s)
      T. Kil, T. Kobayashi, T. Shimura, and H. Watanabe
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition2023

    • Author(s)
      H. Fujimoto, T. Kobayashi, Y. Iwakata, T. Shimura, and Heiji Watanabe
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A SiO2/SiC interface formed by direct bonding of SiO2 and SiC2023

    • Author(s)
      S. Kamihata, T. Kobayashi, T. Shimura, and H. Watanabe
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] プラズマ窒化・SiO2堆積・CO2熱処理の複合プロセスによる高品質 SiC MOS 構造の形成2023

    • Author(s)
      藤本博貴, 小林拓真,志村考功,渡部平司
    • Organizer
      先進パワー半導体分科会第10回講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] ゲートストレス印加による SiC MOS 界面の劣化とデバイス特性への影響2023

    • Author(s)
      小柳香穂, 小林拓真, 平井悠久, 染谷満, 岡本光央, 志村考功, 渡部平司
    • Organizer
      先進パワー半導体分科会第10回講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] SiO2と SiC の直接貼り合わせによる SiO2/SiC 構造の形成2023

    • Author(s)
      神畠真治, 小林拓真, 志村考功, 渡部平司
    • Organizer
      先進パワー半導体分科会第10回講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Reliability Issues in Nitrided SiC MOS Devices2022

    • Author(s)
      T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe
    • Organizer
      International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Nitridation-induced degradation of SiC(1-100) MOS devices2022

    • Author(s)
      T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A.Yoshigoe, T. Shimura, H. Watanabe
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM)
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research
  • [Presentation] Recent progress and challenges in SiC and GaN MOS devices: understanding of physics and chemistry near the MOS interface2022

    • Author(s)
      H. Watanabe, T. Kobayashi, T. Hosoi, T. Shimura
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM)
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] NO窒化を施した非基底面上SiO2/SiC構造のバンドアライメント評価2022

    • Author(s)
      中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Research-status Report
  • [Presentation] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices2022

    • Author(s)
      A. Suzuki, T. Nakanuma, T. Kobayashi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, H. Watanabe
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2022 Research-status Report
    • Int'l Joint Research
  • [Presentation] NO窒化処理を施した非基底面SiC MOSデバイスの信頼性2022

    • Author(s)
      中沼貴澄, 小林拓真 ,染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
    • Organizer
      電気学会 電子デバイス研究会
    • Related Report
      2021 Research-status Report
    • Invited
  • [Presentation] ワイドバンドギャップ半導体MOS界面特性の類似性と相違点2021

    • Author(s)
      渡部平司
    • Organizer
      先進パワー半導体分科会 第8回講演会
    • Related Report
      2021 Research-status Report
    • Invited
  • [Remarks] 渡部研究室ホームページ

    • URL

      http://www-ade.prec.eng.osaka-u.ac.jp/index.php

    • Related Report
      2023 Annual Research Report
  • [Remarks] 渡部研究室ホームページ

    • URL

      http://www-ade.prec.eng.osaka-u.ac.jp/

    • Related Report
      2022 Research-status Report 2021 Research-status Report

URL: 

Published: 2021-07-13   Modified: 2025-01-30  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi