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Development of a high radiation tolerant detector with new semiconductor materials.

Research Project

Project/Area Number 21K18635
Research Category

Grant-in-Aid for Challenging Research (Exploratory)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields
Research InstitutionHigh Energy Accelerator Research Organization

Principal Investigator

Togawa Manabu  大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 准教授 (50455359)

Project Period (FY) 2021-07-09 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2022: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2021: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Keywords半導体検出器 / 放射線耐性 / ワイドギャップ半導体 / 重イオンビーム / CIGS半導体 / 窒化物半導体
Outline of Research at the Start

本研究の最終目的は、新素材半導体を用いて、量子イメージング(可視化)に欠かせない半導体検出器(カメラ)の耐放射線能力を飛躍的に上げ、高放射線環境下での量子イメージングに革新を起こすことである。
本研究では、放射線に強いと期待される半導体を用いて検出器を製作し、その放射線耐性を調べる。新素材半導体として国内での素子開発が活発で、世界で初めての検出器開発となる CIGS、AlNの二種を候補とし評価を進める。

Outline of Final Research Achievements

For the particle detector in high radiation environment, we have developed new semiconductor detectors by the CIGS and GaN. Both detectors were tested with the 400 MeV/n Xe beam and can detect single Xe particle. The outputs from the CIGS detector reduced by radiation damage with Xe beam, while it was recovered by heat annealing. It is a great step to confirm the CIGS semiconductor can be made as a particle detector with the recovery feature for the radiation damage. At 2nd year, the 2-μm thick CIGS detector were irradiated by Xe ions, up to 0.8 MGy. The repetition about recovery is confirmed. The heat annealing has temperature dependence and it seems there is sharp changes between 90 and 130 deg. C. For GaN, the GaN strip detector successfully detected the Xe ion. This will be optimized based on this result.

Academic Significance and Societal Importance of the Research Achievements

本研究の目的は、新素材半導体を用いて、量子イメージング(可視化)に欠かせない半導体検出器(カメラ)の耐放射線能力を飛躍的に上げ、高放射線環境下での量子イメージングに革新を起こすことである。これにより、素粒子標準理論を超える新物理探索のための次世代高強度加速器実験や、福島原発の格納容器周辺で10年以上動作するカメラの開発が可能となる。また、放射線損傷が大きい重粒子測定において、今まで識別できなかった特に重い粒子識別を可能にし、原子核実験の新たな地平を切り拓く。放射線医療における三次元スキャニング照射機器においては、照射精度の飛躍的向上と、早い応答により治療期間を劇的に短縮させる。

Report

(3 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Research-status Report
  • Research Products

    (5 results)

All 2023 2022 2021

All Journal Article (2 results) (of which Peer Reviewed: 2 results,  Open Access: 2 results) Presentation (3 results) (of which Invited: 1 results)

  • [Journal Article] Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam2023

    • Author(s)
      Nishinaga Jiro、Togawa Manabu、Miyahara Masaya、Itabashi Kosuke、Okumura Hironori、Imura Masataka、Kamikawa Yukiko、Ishizuka Shogo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: SK Pages: SK1014-SK1014

    • DOI

      10.35848/1347-4065/acc53b

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection2022

    • Author(s)
      Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide
    • Journal Title

      Functional Diamond

      Volume: 2 Issue: 1 Pages: 167-174

    • DOI

      10.1080/26941112.2022.2150526

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] 粒子検出器に向けたCIGS半導体の放射線耐性評価2023

    • Author(s)
      板橋浩介
    • Organizer
      日本物理学会2023春季大会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 高放射線耐性をもつCIGS半導体位置検出器の開発2022

    • Author(s)
      外川学
    • Organizer
      日本物理学会2022年秋季大会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 加速器実験における半導体検出器と高放射線耐性の要求2021

    • Author(s)
      外川学
    • Organizer
      応用物理学会 先進パワー半導体分科会 第 19 回研究会 ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス
    • Related Report
      2021 Research-status Report
    • Invited

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Published: 2021-07-13   Modified: 2024-01-30  

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