| Project/Area Number |
21K20343
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Multi-year Fund |
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| Review Section |
0202:Condensed matter physics, plasma science, nuclear engineering, earth resources engineering, energy engineering, and related fields
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2021-08-30 – 2023-03-31
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| Project Status |
Completed (Fiscal Year 2022)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2022: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2021: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | Crystal growth / In situ observation / Silicon / Grain boundary / Solid/melt interface |
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| Outline of Research at the Start |
Multi-crystalline materials are widely used in electronic devices and mechanical parts. The growth behaviors of GBs influences the final boundary distribution, and consequently determines the performance of the material. This research attempts to solved a long-standing mystery about the GB evolution during growth by directly observing the growth of individual GBs. Si, by the virtue of ubiquitous applications and abundant background knowledge, is chosen as the target material.
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| Outline of Final Research Achievements |
Experimental methods have been established for studying growth behavior of grain boundaries (GBs). Symmetric Σ9 GBs with large deviation, that means high interfacial energy, were found developing interfacial grooves during solidification. Whereas perfect Σ9 GBs did not develop groove at interface.
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| Academic Significance and Societal Importance of the Research Achievements |
Findings of this research contribute to the knowledge of interfacial morphology and kinetics of growing grain boundaries, which are the major defect determining the properties of multicrystalline materials. Most of the materials in our daily life are multicrystalline.
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