| Budget Amount *help |
¥106,210,000 (Direct Cost: ¥81,700,000、Indirect Cost: ¥24,510,000)
Fiscal Year 2014: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2013: ¥11,050,000 (Direct Cost: ¥8,500,000、Indirect Cost: ¥2,550,000)
Fiscal Year 2012: ¥23,920,000 (Direct Cost: ¥18,400,000、Indirect Cost: ¥5,520,000)
Fiscal Year 2011: ¥23,790,000 (Direct Cost: ¥18,300,000、Indirect Cost: ¥5,490,000)
Fiscal Year 2010: ¥36,790,000 (Direct Cost: ¥28,300,000、Indirect Cost: ¥8,490,000)
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| Outline of Final Research Achievements |
Multilayer interconnection for semiconductors requires the decrease of a barrier layer thickness as thin as possible. This research has focused on the self-formation of the barrier layer and was aimed at understanding the formation mechanism so as to go beyond process limitation with novel materials and processes. The formation mechanism was found to be electric-field induced diffusion. The field strength was dependent on alloying elements, which led to the difference in the formation mechanism. In order to provide solutions to futuristic narrow lines, we developed a chemical vapor deposition method to form an ultrathin barrier layer and a sputter reflow method to fill very narrow lines with copper alloys.
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