| Budget Amount *help |
¥49,270,000 (Direct Cost: ¥37,900,000、Indirect Cost: ¥11,370,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥41,210,000 (Direct Cost: ¥31,700,000、Indirect Cost: ¥9,510,000)
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| Research Abstract |
MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.
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