Growth of high-quality thick InGaN by raised-pressure MOVPE
| Project/Area Number |
22246004
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGUCHI Masahito 名古屋大学, 大学院・工学研究科, 准教授 (20273261)
HONDA Yoshio 名古屋大学, 大学院・工学研究科, 助教 (60362274)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥49,270,000 (Direct Cost: ¥37,900,000、Indirect Cost: ¥11,370,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥41,210,000 (Direct Cost: ¥31,700,000、Indirect Cost: ¥9,510,000)
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| Keywords | 結晶成長 / 可視長波長 LED / 圧力印加有機金属化合物気相成長法 / 加圧MOVPE / 緑色LED / 青色LED / 量子効率 / InGaN / 可視長波長LED / 圧力印加MOVPE / 熱力学 |
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| Research Abstract |
MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.
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Report
(4 results)
Research Products
(29 results)
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[Presentation] Second- and third-generation nitride-based LEDs and challenge for future photovoltaic applications2011
Author(s)
T.Sano, T.Ohata, S.Sakakura, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, M.Mori, M.Iwaya, M.Imade, Y.Mori
Organizer
EDIS2011
Place of Presentation
生命ホール、大阪(招待講演)
Year and Date
2011-12-17
Related Report
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[Presentation] Effect of high-quality GaN substrates on the improvement of performance of group-III-nitride-based devices2011
Author(s)
H.Amano, T.Sugiyama, T.Tanikawa, Y.Honda, M.Yamaguchi, Y.Isobe, A.Mishima, T.Makino, M.Iwaya, M.Imade, Y.Kitaoka, Y.Mori
Organizer
ECO-MATES2011
Place of Presentation
阪急ホテルエクスポパーク、大阪(招待講演)
Year and Date
2011-11-29
Related Report
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[Presentation] 加圧MOVPE法を用いたInGaN結晶成長2010
Author(s)
坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
Organizer
応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
Place of Presentation
東京
Year and Date
2010-12-17
Related Report
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