| Budget Amount *help |
¥32,630,000 (Direct Cost: ¥25,100,000、Indirect Cost: ¥7,530,000)
Fiscal Year 2013: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2011: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2010: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
|
|---|
| Research Abstract |
Atmospheric pressure (AP) plasma processes applicable for the formation of thin crystalline Si solar cells have been developed.
For the stable growth of Si epitaxial films at 600 C by AP plasma chemical vapor deposition, a new water cooled electrode system was developed. By using this system, 2 times higher utilization efficiency of SiH4 than the previous one, the high-rate growth with the suppressed input power using a smaller plasma gap, and the precise control of in-situ doping epitaxy were achievable.
SiO2 films with good electrical properties were grown at 400 C by AP He plasma oxidation of Si, and a good surface passivation quality was demonstrated. AP Ar plasma oxidation process under an open air condition has also been developed to form high quality SiO2 films.
|
