| Budget Amount *help |
¥46,930,000 (Direct Cost: ¥36,100,000、Indirect Cost: ¥10,830,000)
Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Fiscal Year 2011: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
Fiscal Year 2010: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
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| Research Abstract |
A cavity-coupled exciton-polariton laser, namely cavity-polariton laser, has been attracting attention as a new generation low-threshold current density coherent light source composed of a semiconductor microcavity. In the present research, a microcavity composed of a ZnO active region sandwiched by pairwise distributed Bragg reflectors (DBRs) that most likely operates at room temperature was fabricated using a uniquely designed Helicon-Wave-Excited Plasma Sputtering (HWPS) method, which enables to grow high quality epitaxial semiconductor films. We eventually observed an enhanced emission peak at around 3.25 eV, which originates from an exciton-polariton emission coupled with a cavity mode. We therefore conclude that a way to fabricate new functional quantum heterostructures and to characterize them was cut open using the growth, fabrication, and characterization methods developed by this research project.
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