Precise position control of silicon quantum dots and fabrication of quantum information devices.

• Project/Area Number: 22246040
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: ODA Shunri 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
• Co-Investigator(Kenkyū-buntansha): KODERA Tetsuo 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (00466856) ; 内田 建 東京工業大学, 大学院・理工学研究科, 准教授 (30446900)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥48,750,000 (Direct Cost: ¥37,500,000、Indirect Cost: ¥11,250,000); Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000); Fiscal Year 2011: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000); Fiscal Year 2010: ¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000)
• Keywords: 薄膜 / 量子構造 / シリコン量子ドット / ナノ結晶配列制御 / 量子情報デバイス / 少数電荷センサ / スピン制御量子ビット / ナノ結晶シリコン集積化 / 単電子デバイス / レーザアニーリング / 2重結合量子ドット

Research Abstract

We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.

Research Products

• [Journal Article] Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Devices (2013)
  • Author(s): Susoma Jannatul Ferdous, Yoshifumi Nakamine, Tetsuo Kodera, Koichi Usami, Yukio Kawano, Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 4S Pages: 04CH08-04CH08
  • DOI: 10.7567/jjap.52.04ch08
  • NAID: 210000142079
  • Peer Reviewed
• [Journal Article] Dual function of single electron transistor coupled with double quantum dot : gating and charge sensing (2013)
  • Author(s): 蒲原知宏、 小寺哲夫、 荒川泰彦、 小田俊理
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 4S Pages: 04CJ01-04CJ01
  • DOI: 10.7567/jjap.52.04cj01
  • Peer Reviewed
• [Journal Article] Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots (2013)
  • Author(s): K. Takeda, T. Obata, Y. Fukuoka, W. M.Akhtar, J. Kamioka, T. Kodera, S. Oda, and S. Tarucha
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 12
  • DOI: 10.1063/1.4799287
  • Peer Reviewed
• [Journal Article] GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation (2013)
  • Author(s): Daichi Suzuki, Shunri Oda, and Yukio Kawano
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 12
  • DOI: 10.1063/1.4798329
  • Peer Reviewed
• [Journal Article] Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus DopingConcentrations prepared by Very High Frequency Plasma (2012)
  • Author(s): Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 11R Pages: 115202-115202
  • DOI: 10.1143/jjap.51.115202
  • Peer Reviewed
• [Journal Article] Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots (2012)
  • Author(s): G. Yamahata, T. Kodera, H. O. H.Churchill, K. Uchida, C. M. Marcus, and S. Oda
  • Journal Title: Physical Review B Volume: 86 Issue: 11
  • DOI: 10.1103/physrevb.86.115322
  • Peer Reviewed
• [Journal Article] Key capacitive parameters for designing single-electron transistor charge sensors (2012)
  • Author(s): K. Horibe, T. Kodera, T. Kambara, K.Uchida, and S. Oda
  • Journal Title: Journal of Applied Physics Volume: 111 Issue: 9 Pages: 111-111
  • DOI: 10.1063/1.4711094
  • Peer Reviewed
• [Journal Article] Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots (2012)
  • Author(s): T. Ferrus, A. Rossi, W. Lin, D. A.Williams, T. Kodera, and S. Oda
  • Journal Title: AIP Advances Volume: 2 Issue: 2
  • DOI: 10.1063/1.4707165
  • Peer Reviewed
• [Journal Article] High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors (2012)
  • Author(s): Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda
  • Journal Title: Applied Physics Letters Volume: 100
  • URL: http://link.aip.org/link/doi/10.1063/1.3694046
  • Peer Reviewed
• [Journal Article] A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (2012)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 2S Pages: 02BJ10-02BJ10
  • DOI: 10.1143/jjap.51.02bj10
  • NAID: 210000140266
  • Peer Reviewed
• [Journal Article] Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature (2012)
  • Author(s): M. A. Rafiq, Katsunori Masubuchi,Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 2R Pages: 025202-025202
  • DOI: 10.1143/jjap.51.025202
  • NAID: 210000140154
  • Peer Reviewed
• [Journal Article] High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors (2012)
  • Author(s): Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A.K. Durrani, Alan Colli, Hiroshi Mizuta, William I.Milne, Shunri Oda
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 11 Pages: 113108-113108
  • DOI: 10.1063/1.3694046
  • Peer Reviewed
• [Journal Article] Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System (2011)
  • Author(s): J.Tarun, S.Huang, Y.Fukuma, H.Idzuchi, Y.Otani, N.Fukata, K.Ishibashi, S.Oda
  • Journal Title: Applied Physics Express Volume: 5 Issue: 4 Pages: 0450011-3
  • DOI: 10.1143/apex.5.045001
  • Peer Reviewed
• [Journal Article] Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching (2011)
  • Author(s): Yoshifumi Nakamine
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 11R Pages: 115002-115002
  • DOI: 10.1143/jjap.50.115002
  • Peer Reviewed
• [Journal Article] Growth of Narrow and Straight Germanium Nanowires by Vapour-Liquid-SolidChemical-Vapour-Deposition (2011)
  • Author(s): Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 10R Pages: 105002-105002
  • DOI: 10.1143/jjap.50.105002
  • Peer Reviewed
• [Journal Article] Numerical Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, and Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 110
  • URL: http://link.aip.org/link/doi/10.1063/1.3573991
  • Peer Reviewed
• [Journal Article] Growth of Ge-Si nanowires heterostructure via chemical vapour deposition (2011)
  • Author(s): C. B. Li, K. Usami, H. Mizuta, and S.Oda
  • Journal Title: Thin Solid Films Volume: 519 Pages: 4174-4176
  • URL: http://dx.doi.org/10.1016/j.tsf.2011.02.005
  • Peer Reviewed
• [Journal Article] Demonstration of spin valve effects in Silicon nanowires (2011)
  • Author(s): Jean L. Tarun, Shaoyun Huang, Y.Fukuma, H. Idzuchi, Y. Otani, Naoki Fukata, Koji Ishibashi and Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 109
  • URL: http://link.aip.org/link/doi/10.1063/1.3562904
  • Peer Reviewed
• [Journal Article] Simulation study of charge modulation in coupled quantum dots in silicon (2011)
  • Author(s): Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 4S Pages: 04DJ05-04DJ05
  • DOI: 10.1143/jjap.50.04dj05
  • NAID: 210000070359
  • Peer Reviewed
• [Journal Article] Detection of variable tunneling rates in silicon quantum dots (2011)
  • Author(s): Rossi, T. Ferrus,W. Lin, T. Kodera, D.A. Williams, and S. Oda
  • Journal Title: Applied Physics Letters Volume: 98
  • URL: http://link.aip.org/link/doi/10.1063/1.3573991
  • Peer Reviewed
• [Journal Article] Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System (2011)
  • Author(s): Y. Nakamine, N. Inaba, T. Kodera, K.Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M. Stutzmann, and S. Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 2R Pages: 025002-025002
  • DOI: 10.1143/jjap.50.025002
  • NAID: 40018283320
  • Peer Reviewed
• [Journal Article] Demonstration of spin valve effects in Silicon nanowires (2011)
  • Author(s): Jean L.Tarun, Shaoyun Huang, Y.Fukuma, H.Idzuchi, Y.Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 109 Issue: 7
  • DOI: 10.1063/1.3562904
  • Peer Reviewed
• [Journal Article] Detection of variable tunneling rates in silicon quantum dots (2011)
  • Author(s): A.Rossi, T.Ferrus, W.Lin, T.Kodera, D.A.Williams, S.Oda
  • Journal Title: Applied Physics Letters Volume: 98 Issue: 13
  • DOI: 10.1063/1.3573991
  • Peer Reviewed
• [Journal Article] Numerical Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Journal Title: Journal of Applied Physics Volume: 110 Issue: 5
  • DOI: 10.1063/1.3627238
  • Peer Reviewed
• [Journal Article] Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System (2011)
  • Author(s): Y.Nakamine, N.Inaba, T.Kodera, K.Uchida, R.N.Pereira, A.R.Stegner, M.S.Brandt, M.Stutzmann, S.Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Pages: 0250021-5
  • NAID: 40018283320
  • Peer Reviewed
• [Journal Article] Simulation study of charge modulation in coupled quantum dots in silicon (2011)
  • Author(s): T.Kambara, T.Kodera, T.Takahashi, G.Yamahata, K.Uchida, S.Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070359
  • Peer Reviewed
• [Journal Article] Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots (2010)
  • Author(s): T. Ishikawa, H. Nikaido, K. Usami, K.Uchida, S. Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Issue: 12R Pages: 125002-125002
  • DOI: 10.1143/jjap.49.125002
  • NAID: 40017420077
  • Peer Reviewed
• [Journal Article] Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors (2010)
  • Author(s): B. Pruvost,K. Uchida, H. Mizuta,S.Oda
  • Journal Title: IEEE Transactions on Nanotechnology Volume: 9(4) Issue: 4 Pages: 504-512
  • DOI: 10.1109/tnano.2009.2030502
  • Peer Reviewed
• [Journal Article] Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation (2010)
  • Author(s): J. Ogi, M. A. Ghiass, T. Kodera, Y.Tsuchiya, K. Uchida, S. Oda, and H. Mizuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Issue: 4R Pages: 044001-044001
  • DOI: 10.1143/jjap.49.044001
  • NAID: 40017085076
  • Peer Reviewed
• [Journal Article] Experimental observation of nenhanced electron-phonon interaction in suspended Si double quantum dots (2010)
  • Author(s): J. Ogi, T. Ferrus, T. Kodera, Y.Tsuchiya, K. Uchida, D. A. Williams, S. Oda, and H. Mizuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Issue: 4R Pages: 045203-045203
  • DOI: 10.1143/jjap.49.045203
  • Peer Reviewed
• [Journal Article] Scaling Analysis of Nanoelectromechanical MemoryDevices (2010)
  • Author(s): T. Nagami, Y. Tsuchiya, K. Uchida, H.Mizuta, and S. Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Issue: 4R Pages: 044304-044304
  • DOI: 10.1143/jjap.49.044304
  • Peer Reviewed
• [Journal Article] シリコンナノ結晶のCVD成長と新機能 (2010)
  • Author(s): 小田俊理
  • Journal Title: 日本結晶成長学会誌 Volume: 37(4)
  • URL: http://ci.nii.ac.jp/naid/110008440731
  • Peer Reviewed
• [Journal Article] Vertical coupled SiGe double quantum dot (2010)
  • Author(s): C. B. Li, G. Yamahata, J.S. Xia, H.Mizuta, S. Oda and Y. Shiraki
  • Journal Title: Electronics Letters Volume: 46(13) Issue: 13 Pages: 940-941
  • DOI: 10.1049/el.2010.0494
  • Peer Reviewed
• [Journal Article] Suspendedquantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation (2010)
  • Author(s): J.Ogi, M.A.Ghiass, T.Kodera, Y.Tsuchiya, K.Uchida, S.Oda, H.Mizuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Pages: 0440011-5
  • Peer Reviewed
• [Journal Article] Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots (2010)
  • Author(s): J.Ogi, T.Ferrus, T.Kodera, Y.Tsuchiya, K.Uchida, D.A.Williams, S.Oda, H.Mizuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Pages: 0452031-5
  • NAID: 210000068142
  • Peer Reviewed
• [Journal Article] Scaling Analysis of Nanoelectromechanical Memory Devices (2010)
  • Author(s): T.Nagami, Y.Tsuchiya, K.Uchida, H.Mizuta, S.Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Pages: 0443041-5
  • NAID: 40017085081
  • Peer Reviewed
• [Journal Article] Design of New Logic ArchitectureutilizeOptimized Suspended-Gate Single-Electron Transistors (2010)
  • Author(s): B.Pruvost, K.Uchida, H.Mizuta, S.Oda
  • Journal Title: IEEE Transactions on Nanotechnology Volume: 9(4) Pages: 504-512
  • Peer Reviewed
• [Journal Article] Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots (2010)
  • Author(s): T.Ishikawa, H.Nikaido, K.Usami, K.Uchida, S.Oda
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 Pages: 1250021-4
  • NAID: 40017420077
  • Peer Reviewed
• [Presentation] 微小磁性体電極集積によるシリコン2重結合量子ドットへの2軸磁場印加 (2013)
  • Author(s): 蒲原知宏,小寺哲夫,河野行雄,小田俊理
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2013-03-27
• [Presentation] Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals (2013)
  • Author(s): A. Boudraa, A. Seyhan, Y. Nakamine, Y. Ogawa, F. Minami, Y. Kawano and S. Oda
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: 東京
  • Year and Date: 2013-02-18
• [Presentation] High Density Vertical Silicon Nanowires for Photodetector Applications (2013)
  • Author(s): Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, and Shunri Oda
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: 東京
  • Year and Date: 2013-02-18
• [Presentation] Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films (2012)
  • Author(s): Susoma Jannatul Ferdous, Nakamine Yoshifumi, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: 京都市
  • Year and Date: 2012-09-25
• [Presentation] 正三角形の頂点に配置したシリコン3重量子ドットの作製と特性評価 (2012)
  • Author(s): 小寺哲夫,溝口来成,林久志堀部浩介,蒲原知宏,荒川泰彦,小田俊理
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山市
  • Year and Date: 2012-09-14
• [Presentation] Silicon nanocrystal memory (2012)
  • Author(s): Shunri Oda and Shaoyun Huang
  • Organizer: Materials Research Society
  • Place of Presentation: サンフランシスコ(米国)
  • Year and Date: 2012-04-10
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: International Conference on Theoretical and Applied Physics
  • Place of Presentation: Kharagpur, India(招待講演)
  • Year and Date: 2011-12-01
• [Presentation] NeoSilicon Based Nano-electromechanical Devices (2011)
  • Author(s): S.Oda
  • Organizer: THE 3rd INTERNATIONAL WORKSHOP ONNANOTECHNOLOGY AND APPLIC ATION-IWNA 2011
  • Place of Presentation: Vung Tau, Vietnam(招待講演)
  • Year and Date: 2011-11-11
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: International Workshop on Group IV Nano-materials and Advanced Devices
  • Place of Presentation: Nanjing, China(招待講演)
  • Year and Date: 2011-11-07
• [Presentation] Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition (2011)
  • Author(s): M.Simanullang, K.Usami, T.Kodera, K.Uchida
  • Organizer: MNC 2011
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-10-27
• [Presentation] Influence of Backgate Voltage on Spin Valve (2011)
  • Author(s): J.Tarun, S.Huang, Y.Fukuma, H.Idzuchi, Y.Otani, T.Kodera, N.Fukata, K.Ishibashi S.Oda
  • Organizer: MNC 2011
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-10-26
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan(招待講演)
  • Year and Date: 2011-10-05
• [Presentation] Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact (2011)
  • Author(s): K. Horibe, T. Kodera, T. Kambara, K.Uchida, S. Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on AdvancedHybrid Nano Devices: Prospects by World's Leading Scientists
  • Place of Presentation: 東京
  • Year and Date: 2011-10-04
• [Presentation] Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application (2011)
  • Author(s): Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, and Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World's Leading Scientists
  • Place of Presentation: 東京
  • Year and Date: 2011-10-04
• [Presentation] Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application (2011)
  • Author(s): Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Low-Temperature Magnetoresistance Studies of Silicon Nano wires with Permalloy Leads (2011)
  • Author(s): Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Tetsuo Kodera, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Charge detection techniques in Si double quantum dots (2011)
  • Author(s): Tomohiro Kambara, Tetsuo Kodera, Thierry Ferrus, Alessandro Rossi, Kosuke Horibe, Yasuhiko Arakawa, David Williams, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Synthesis of small-diameter Ge NW at low temperature for electron device application (2011)
  • Author(s): Marolop SimanuUang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Photoluminescence and Raman studies of Ge nanowires grown on Si (100) and (111) substrates (2011)
  • Author(s): Ayse Seyhan, Yoshi Ogawa, Maralop Simanullang Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma (2011)
  • Author(s): Ken Someno, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Mutsuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Electron transport in a single silicon nanocrystal between nanogap electrodes (2011)
  • Author(s): Tomotaka Sawada, Testuo Kodera, Yuki Kawano, Mustuko Hatano, Shunri Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact (2011)
  • Author(s): Y.Fukuoka, T.Kodera, K.Takeda, T.Obata, K.Yoshida, T.Otsuka, K. Sawano, K Uchida, Y.Shiraki, S.Tarucha, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact (2011)
  • Author(s): K.Horibe, T.Kodera, T.Kambara, K.Uchida, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] Development of silicon quantum dot devices toward spin quantum bits (2011)
  • Author(s): T.Kodera, K.Horibe, W.Lin, T.Kambara, T.Ferrus, A.Rossi, K.Uchida, D.A.Williams, Y.Arakawa, S.Oda
  • Organizer: G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices : Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-10-04
• [Presentation] A Multi-purpose Electrostatically Defi ned Silicon Quantum Dot Structure (2011)
  • Author(s): M.A.Sulthoni, T.Kodera, Y.Kawano S.Oda
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2011-09-29
• [Presentation] GERMANIUM NANOWIRES WITH 3-NM-DIAMETER PR EPARED BY LOW TEMPERATURE (260OC) VAPOUR-LIQ UID-SOLID CHEMICAL VAPOUR DEPOSITION (2011)
  • Author(s): M.Simanullang, K.Usami, T.Kodera, K.Uchida, S.Oda
  • Organizer: EuroCVD 18
  • Place of Presentation: Kinsale, Irelamd
  • Year and Date: 2011-09-07
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, and Shunri Oda
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
  • Place of Presentation: 奈良
  • Year and Date: 2011-08-25
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
  • Place of Presentation: Nara, Japan
  • Year and Date: 2011-08-25
• [Presentation] Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell (2011)
  • Author(s): Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda
  • Organizer: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
  • Place of Presentation: Nara, Japan
  • Year and Date: 2011-08-23
• [Presentation] Observation of single-electron regime in a silicon quantum dot by a single-electron transistor (2011)
  • Author(s): Kousuke Horibe, Tetsuo Kodera, Tomohiro Kambara, Ken Uchida, Shunri Oda
  • Organizer: EP2DS-19
  • Place of Presentation: Tallahassee, U.S.A.
  • Year and Date: 2011-07-26
• [Presentation] Triangularly-positioned silicon triple quantum dots (2011)
  • Author(s): Tetsuo Kodera, Kousuke Horibe, H.Hayashi, Tomohiro Kambara, Ken Uchida, Yasuhiko Arakawa, Shunri Oda
  • Organizer: EP2DS-19
  • Place of Presentation: Tallahassee, U.S.A.
  • Year and Date: 2011-07-26
• [Presentation] NeoSilicon Based Nano-electromechanical Information Devices (2011)
  • Author(s): S.Oda
  • Organizer: 18th International Conference on Mixed Design of Integrated Circuits and Systems
  • Place of Presentation: Gliwice, Poland(招待講演)
  • Year and Date: 2011-06-16
• [Presentation] Charge Detection in Silicon Quantum Dots Coupled in Parallel (2011)
  • Author(s): T.Kodera, K.Horibe, W.Lin, T.Kambara, T.Ferrus, A.Rossi, K.Uchida, D.A.Williams, Y.Arakawa, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-13
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Mohammad R. T.Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, and Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: 京都
  • Year and Date: 2011-06-12
• [Presentation] Magnetoresistance of Cobalt-Contacted Silicon Nanowire (2011)
  • Author(s): Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, YoshiChika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System (2011)
  • Author(s): Yoshifumi Nakamine, Mohammad R.T.Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device (2011)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact (2011)
  • Author(s): Y.Fukuoka, T.Kodera, T.Otsuka, K.Takeda, T.Obata, K.Yoshida, K.Sawano, K Uchida, Y.Shiraki, S.Tarucha, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor (2011)
  • Author(s): T.Ferrus, A.Rossi, W.Lin, D.A.Williams, T.Kodera, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-06-12
• [Presentation] Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application (2011)
  • Author(s): Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Synthesis of small-diameter Ge NW at low temperature for electron device application (2011)
  • Author(s): Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots (2011)
  • Author(s): Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda
  • Organizer: 7th International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: Albany, U.S.A
  • Year and Date: 2011-05-16
• [Presentation] Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System (2011)
  • Author(s): Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara and Shunri Oda
  • Organizer: Materials Research Society
  • Place of Presentation: サンフランシスコ(米国)
  • Year and Date: 2011-04-27
• [Presentation] Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System (2011)
  • Author(s): Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara, Shunri Oda
  • Organizer: Materials Research Society
  • Place of Presentation: San Francisco, U.S.A
  • Year and Date: 2011-04-25
• [Presentation] NeoSilicon Based Nano-electromechanical Devices (2011)
  • Author(s): S.Oda
  • Organizer: 18th International Conference on Mixed Design of Integrated Circuits and Systems
  • Place of Presentation: Gliwice (ポーランド)
• [Presentation] Spin valve effects in Silicon nanowires (2010)
  • Author(s): Jean L.Tarun, Shaoyun Huang, Y.Fukuma, H.Idzuchi, Y.Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda
  • Organizer: 55th Magnetism and Magnetic Materials Conference (MMM)
  • Place of Presentation: Atlanta, U.S.A.
  • Year and Date: 2010-11-14
• [Presentation] Distinct Spin Valve Effects in Silicon Nanowires Measured by Non-local Electrode Configuration (2010)
  • Author(s): Jean L.Tarun, Shaoyun Huang, Y.Fukuma, H.Idzuchi, Y.Otani, Naoki Fukata, Koji Ishibashi, Shimri Oda
  • Organizer: International Microprocesses and Nanotech nology Conference (MNC 2010)
  • Place of Presentation: Kitakyushu, Japan
  • Year and Date: 2010-11-11
• [Presentation] NeoSilicon based nanoelectromechanical information devices (2010)
  • Author(s): S.Oda
  • Organizer: IEEE EDS Minicolloquim on Physics of Electron Devices in Engineering Education
  • Place of Presentation: Pokhara, Nepal
  • Year and Date: 2010-10-25
• [Presentation] Simulation study of charge modulation in coupled quantum dots in silicon (2010)
  • Author(s): Tomohiro Kambara, Tetsuo Kodera, Gento Yamahata, Ken Uchida, Shunri Oda
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-23
• [Presentation] Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically (2010)
  • Author(s): Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-23
• [Presentation] Scaled silicon NEM hybrid devices (2010)
  • Author(s): S.Oda
  • Organizer: Nano-Electro-Mechanical Devices for Integrated Sensing and Switching Satellite workshop to ESSDERC/ESSCIRC
  • Place of Presentation: Seville, Spain
  • Year and Date: 2010-09-17
• [Presentation] Silicon Quantum Dot Devices (2010)
  • Author(s): S.Oda
  • Organizer: Sixteenth School on Condensed Matter Physics
  • Place of Presentation: Varna, Bulgaria
  • Year and Date: 2010-09-01
• [Presentation] Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami (2010)
  • Author(s): Ian C.Robertson, Ken Uchida, Shunri Oda
  • Organizer: 7th International Conference-NN10
  • Place of Presentation: Halkidiki, Greece
  • Year and Date: 2010-07-12
• [Presentation] Spin-related tunneling in lithographically-defined silicon quantum dots (2010)
  • Author(s): T.Kodera, G.Yamahata, T.Kambara, K.Horibe, K.Uchida, C.M.Marcus, S.Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, U.S.A
  • Year and Date: 2010-06-14
• [Presentation] Single-electron energy dissipation processes mediated by slabmode phonons observed for suspended silicon double quantum dots (2010)
  • Author(s): J.Ogi, T.Ferrus, T.Kodera, Y.Tsuchiya, K.Uchida, D.A.Williams, S.Oda, H.Mizuta
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, U.S.A
  • Year and Date: 2010-06-13
• [Presentation] Scaled silicon NEM hybrid devices (2010)
  • Author(s): S. Oda
  • Organizer: Nano-Electro-Mechanical Devices for Integrated Sensing and Switching; Satellite workshop toESSDERC/ESSCIRC 2010
  • Place of Presentation: Seville(スペイン)
• [Presentation] Spin-related tunneling in lithographically-defined silicon quantum dots (2010)
  • Author(s): T. Kodera, G. Yamahata, T. Kambara, K.Horibe, K. Uchida, C. M. Marcus and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu(米国)
• [Presentation] 三角形状に配置したシリコン三重量子ドットの電子輸送特性
  • Author(s): 溝口来成
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県）
• [Presentation] チャージセンサによるシリコン2重結合量子ドットの少数電子状態観測
  • Author(s): 堀部浩介
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県）
• [Presentation] GaAs/AlGaAsを用いたテラヘルツ帯分光器のゲート電圧による出力変調
  • Author(s): 鈴木大地
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県）
• [Presentation] 熱電変換素子に向けたGe/Si コアシェルナノワイヤの作製
  • Author(s): 小路智也
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県）
• [Presentation] 微小磁性体電極集積によるシリコン2重結合量子ドットへの2軸磁場印加
  • Author(s): 蒲原知宏
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県）
• [Presentation] High Density Vertical Silicon Nanowires for Photodetector Applications
  • Author(s): Akhmadi Surawijaya
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Fabrication and characterization of bottom-up Si Nanowire
  • Author(s): Tomohiro Noguchi,
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Fabrication of Ge/Si core/shell nanowires using size controlled Au nanoparticles as Vapor-Liquid-Solid growth catalysts
  • Author(s): Tomoya Shoji
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Terahertz spectroscopic signal modulation by the gate voltage with a GaAs/AlGaAs field-effect transistor
  • Author(s): Daichi Suzuki,
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Terahertz imaging of crystalline polyhydroxybutyrates
  • Author(s): Nobuhiro Kondo
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Terahertz detection with antenna-coupled heavily P-doped Si quantum dots
  • Author(s): Takayoshi Kuga
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET
  • Author(s): Teruyuki Ohashi
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals
  • Author(s): A. Boudraa
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Fabrication of MOS structure gate-defined Si/SiGe quantum dot device
  • Author(s): Jun Kamioka
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Observation of Few-Hole Regime throughp-channel Si Double Quantum Dots
  • Author(s): Ko Yamada
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Two-electron silicon double quantum dots fabricated for spin-based qubit application
  • Author(s): K. Horibe
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Synthesis of Ge nanowires far below AuGe eutectic temperature, their characterisation and device fabrication
  • Author(s): M. Simanullang
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Observation of electron transitions in triple quantum dot by using charge sensor
  • Author(s): R. Mizokuchi,
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI
  • Author(s): Satoshi Ihara
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance
  • Author(s): Tomohiro Kambara
  • Organizer: IEEE EDS WIMNACT-37
  • Place of Presentation: Tokyo Tech Front (東京都)
• [Presentation] Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device
  • Author(s): Daichi Suzuki
  • Organizer: IRMMW-THz 2012
  • Place of Presentation: Wollongong (オーストラリア)
• [Presentation] Terahertz Radiation Detection through a Micro-Scale Antenna and a Silicon-Based Quantum Dot
  • Author(s): Luca Crespi
  • Organizer: IRMMW-THz 2012
  • Place of Presentation: Wollongong (オーストラリア)
• [Presentation] Dual Function of Charge Sensor: Charge Sensing and Gating
  • Author(s): Kambara Tomohiro
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: 京都国際会議場(京都府)
• [Presentation] Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures
  • Author(s): Yamada Ko
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: 京都国際会議場(京都府)
• [Presentation] Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films
  • Author(s): Susoma Jannatul Ferdous
  • Organizer: Solid State Devices and Materials Conference
  • Place of Presentation: 京都国際会議場(京都府)
• [Presentation] ホール輸送によるp型量子ドットの作製と特性評価
  • Author(s): 山田 宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] バックゲートとソース/ドレイン電圧印加による各量子ドットの電気化学ポテンシャル制御
  • Author(s): 蒲原知宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] 正三角形の頂点に配置したシリコン3重量子ドットの作製と特性評価
  • Author(s): 小寺哲夫
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device
  • Author(s): Jannatul susoma
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] 単電子トランジスタによるSi三重量子ドットのチャージセンシング
  • Author(s): 溝口来成,
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] 神岡 純
  • Author(s): MOS構造gateを有するSi/SiGe量子ドットデバイスの作製
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] Si ナノワイヤ FETの電気特性に対するアニーリング処理の影響
  • Author(s): 野口智弘
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] VHFプラズマにより作製したナノ結晶シリコンのフッ硝酸による粒径縮小
  • Author(s): 近藤信啓
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] Low Growth Temperature of Ge NWs for Electron Device Application
  • Author(s): Marolop Simanullang
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] GaAs/AlGaAsを用いた周波数可変テラヘルツ波検出器のゲート電圧による応答制御
  • Author(s): 鈴木大地
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
• [Presentation] Silicon quantum dots devices
  • Author(s): S. Oda
  • Organizer: IMRC 2012
  • Place of Presentation: Cancun (メキシコ)
  • Invited
• [Presentation] Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot
  • Author(s): J.Kamioka
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu (米国)
• [Presentation] Microwave manipulation of electrons in silicon quantum dots
  • Author(s): T. Ferrus
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu (米国)
• [Presentation] Charge sensing of a Si triple quantum dot system using single electron transistors
  • Author(s): R. Mizokuchi,
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu (米国)
• [Presentation] Fabrication and characterization of Si/SiGe quantum dots with capping gate
  • Author(s): T. Kodera
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu (米国)
• [Presentation] Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition
  • Author(s): Marolop Simanullang
  • Organizer: ECS Transactions
  • Place of Presentation: Seatle (米国)
  • Invited
• [Presentation] Silicon nanocrystal memory
  • Author(s): Shunri Oda
  • Organizer: Materials Research Society
  • Place of Presentation: San Francisco (米国)
  • Invited
• [Book] Si量子ドットを用いた単電子トランジスタの研究 (2011)
  • Author(s): 小田俊理
  • Total Pages: 13
• [Book] メモリデバイス (2011)
  • Author(s): 小田俊理
  • Total Pages: 3
  • Publisher: 電子情報通信学会「知識ベース」(オーム社)
• [Book] Si量子ドットを用いた単電子トランジスタの研究 (2011)
  • Author(s): 小田俊理
  • Total Pages: 12
  • Publisher: 量子ドットエレクトロニクスの最前線(エヌ・ティー・エス)
• [Book] ナノシリコンの最新技術と応用展開 (2010)
  • Author(s): 小田俊理
  • Total Pages: 13
  • Publisher: シーエムシー出版
• [Book] Silicon Nanocrystal Flash Memory (2010)
  • Author(s): S.Oda, S-Y Huang
  • Total Pages: 49
  • Publisher: Wiley VCH, Weinheim
• [Book] プラズマ技術によるナノシリコンドットの作製 (2010)
  • Author(s): 小田俊理
  • Total Pages: 9
  • Publisher: ソーエムシー出版
• [Book] Photovoltaics and Optoelectronics from Nanoparticles (2010)
  • Author(s): M.Winterer, W.Gladfelter, D.Gamelin, S.Oda
  • Total Pages: 159
  • Publisher: Materials Research Society Symposium Proceedings
• [Remarks]
  • URL: http://odalab.pe.titech.ac.jp/index.html
• [Remarks]
  • URL: http://odalab.pe.titech.ac.jp/index.html