| Project/Area Number |
22246040
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ODA Shunri 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
KODERA Tetsuo 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (00466856)
内田 建 東京工業大学, 大学院・理工学研究科, 准教授 (30446900)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥48,750,000 (Direct Cost: ¥37,500,000、Indirect Cost: ¥11,250,000)
Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2011: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2010: ¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000)
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| Keywords | 薄膜 / 量子構造 / シリコン量子ドット / ナノ結晶配列制御 / 量子情報デバイス / 少数電荷センサ / スピン制御量子ビット / ナノ結晶シリコン集積化 / 単電子デバイス / レーザアニーリング / 2重結合量子ドット |
|---|
| Research Abstract |
We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.
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