| Budget Amount *help |
¥49,660,000 (Direct Cost: ¥38,200,000、Indirect Cost: ¥11,460,000)
Fiscal Year 2012: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2011: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2010: ¥33,670,000 (Direct Cost: ¥25,900,000、Indirect Cost: ¥7,770,000)
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| Research Abstract |
A dynamically-controlled micro-plasma-excited (MIPE) aluminum gallium nitride deepultraviolet (DUV) light-emitting device is demonstrated. This device provides high-powerDUV emission at any desired wavelength, and allows enlargement of emission areas likeplasma display panels for easy, low-cost fabrication. Neither p-n junctions nor electrodecontacts are required for device fabrication. We fabricated 2-inch diameter wafer-sizeMIPE emitters of DUV light at specific wavelengths from AlGaN quantum wells with 50 mWaverage output power. We can also fabricate 6-inch diameter DUV emitters using sapphirewafers and 1 m×5 m panel-type DUV emitters.
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