| Project/Area Number |
22310062
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanostructural science
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
KAGESHIMA Hiroyuki 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員 (70374072)
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| Co-Investigator(Kenkyū-buntansha) |
ONO Yukinori 富山大学, 大学院・工学研究部, 教授 (80374073)
NOBORISAKA Jinichiro 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 研究員 (30515573)
FUJIWARA Akira 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 (70393759)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2011: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2010: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | ナノ構造物性 / ナノ構造 / ＩＶ族半導体 / 誘電率 / ナノキャパシタ / 第一原理計算 / ＥＬスペクトル / 谷分離効果 / IV族半導体 / 不純物準位 / ELスペクトル / シュタルク効果 |
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| Research Abstract |
Based on the first-principles calculation and the EFED method, we studied (1) lowering of dielectric constant in IV semiconductor nano-structures, (2) physical property of IV semiconductor nano-structures with reduced dielectric constant, and (3) growth mechanism of IV semiconductor nano-structures toward the control of the dielectric constant. Based on the luminescence spectroscopy, we also studied (4) opto-electric measurement of impurities in IV semiconductor nano-structures, and (5) the effect of interface control for IV semiconductor nano-structures.
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