| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2011: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2010: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Research Abstract |
In order to understand the mechanism of the nonlinear electric characteristics in the semiconductor-based three-branch nanowire junction (TBJ) device, we have developed a light-induced local conductance modulation system and characterized the device. We clarified that the non-uniform distribution of conductance inside the TBJ resulted in the nonlinear characteristics. For application of the TBJ, we designed and fabricated NAND gates and flip-flop circuits integrating the TBJ devices, and succeeded in their correct operation. We have extended the TBJ technology to other materials, such as graphene and ZnO.
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