Development of atom-scale design and characterization technique towards single-dopant controlled silicon nanoelectronics

• Project/Area Number: 22310085
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Japan Advanced Institute of Science and Technology (2011-2012); Shizuoka University (2010)
• Principal Investigator: MIZUTA Hiroshi 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
• Co-Investigator(Kenkyū-buntansha): TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000); Fiscal Year 2012: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2011: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
• Keywords: ナノデバイス / 不純物 / 第一原理計算 / ドーパント原子 / シリコンナノデバイス / 第一原理解析 / 不純物原子

Research Abstract

We conducted large-scale ab initio analysis of single and a few dopant atoms embedded in extremely-scaled silicon nanorod and nano stub-shaped channel devices with dimensions as small as Bohr radius. We revealed the electronic states and positional stability of the single dopant atoms. A new analysis method based on PDOS spectra and 3D wavefunction visualization was introduced to identify the effective LUMO states, and we succeeded to evaluate the donor electron binding energy for the silicon nanostructures connected to the electrodes for the first time.

Research Products

• [Journal Article] Electron-tunneling operation of single-donor-atom transistors at elevated temperatures (2013)
  • Author(s): E. Hamid, D. Moraru, Y. Kuzuya, T.Mizuno, Le The Anh, H. Mizuta, and M.Tabe
  • Journal Title: Phys. Rev. B Volume: Vol.87
  • Peer Reviewed
• [Journal Article] Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor‐Acceptor Pair in Nanoscale Si p‐n Junctions (2012)
  • Author(s): A. Udhiarto, D. Moraru, S. Purwiyanti,Y. Kuzuya, T. Mizuno, H. Mizuta, and M.Tabe
  • Journal Title: Appl. Phys. Exp Volume: Vol. 5
  • NAID: 10031126442
  • Peer Reviewed
• [Journal Article] '第一原理計算によるシリコンナノトラジスタ中の 単一リン不純物の電子状態解析' (2012)
  • Author(s): 葛屋, モラル, 水野, 田部, 水田
  • Journal Title: 電子情報通信学会・信学技報 Volume: Vol. 111 Pages: 7-11
  • Peer Reviewed
• [Journal Article] Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions (2012)
  • Author(s): A. Udhiarto, D. Moraru, S. Purwiyanti, Y. Kuzuya, T. Mizuno, H. Mizuta, and M. Tabe
  • Journal Title: Appl. Phys. Exp Volume: 5
  • NAID: 10031126442
  • Peer Reviewed
• [Journal Article] Electron-tunneling operation of single-donor-atom transistors at elevated temperatures (2012)
  • Author(s): E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, Le The Anh, H. Mizuta, and M. Tabe
  • Journal Title: Phys. Rev. B Volume: 87
  • Peer Reviewed
• [Journal Article] 第一原理計算によるシリコンナノトラジスタ中の単一リン不純物の電子状態解析 (2012)
  • Author(s): 葛屋陽平, モラルダニエル, 水野武志, 田部道晴, 水田博
  • Journal Title: 電子情報通信学会・信学技報 Volume: IEICE-111 Pages: 7-11
• [Journal Article] 'Theory of quasiballistic transport through nanocrystalline silicon dots' (2011)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta and N. Koshida
  • Journal Title: Appl.Phys. Lett Volume: Vol. 98
  • Peer Reviewed
• [Journal Article] 'Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy' (2011)
  • Author(s): H. Hanafusa, N. Hirose, A. Kasamatsu,T. Mimura, T. Matsui, H.M.H. Chong, H.Mizuta and Y Suda
  • Journal Title: Appl. Phys. Exp Volume: Vol. 4
  • NAID: 10027783571
  • Peer Reviewed
• [Journal Article] Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy (2011)
  • Author(s): H.Hanafusa, N.Hirose, A.Kasamatsu, T.Mimura, T.Matsui, H.M.H.Chong, H.Mizuta, Y Suda
  • Journal Title: Appl.Phys.Express Volume: 4
  • NAID: 10027783571
  • Peer Reviewed
• [Journal Article] Theory of quasi-ballistic transport through nanocrystalline silicon dots (2011)
  • Author(s): N.Mori, H.Minari, S.Uno, H.Mizuta, N.Koshida
  • Journal Title: Appl.Phys.Lett. Volume: 98
  • Peer Reviewed
• [Presentation] Ab initio study of binding energy for single phosphorus donor in silicon nano stub-shaped channel (2013)
  • Author(s): L. T. Anh, Y. Kuzuya, D. Moraru, T.Mizuno, Manoharan M., M. Tabe and H.Mizuta
  • Organizer: 第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学, 神奈川
  • Year and Date: 2013-03-29
• [Presentation] Ab initio study of binding energy for single phosphorus donor in silicon nano stub-shaped channel (2013)
  • Author(s): L. T. Anh, Y. Kuzuya, D. Moraru, T. Mizuno, Manoharan M., M. Tabe and H. Mizuta
  • Organizer: 第６０回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Ab initio study of Phosphorus donor states in a single dopant transistor with a stub-shaped channel (2012)
  • Author(s): L. T. Anh, Y. Kuzuya, D. Moraru, T.Mizuno, M. Muruganathan, M. Tabe and H.Mizuta
  • Organizer: Conference on Computational Physics (CCP2012)
  • Place of Presentation: Kobe, Hyogo
  • Year and Date: 2012-10-17
• [Presentation] Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs (2012)
  • Author(s): D. Moraru, E. Hamid, Y. Kuzuya, T.Mizuno, H. Mizuta and M. Tabe
  • Organizer: IUMRS-International Conference on Electronic Materials(IUMRS-ICEM 2012)
  • Place of Presentation: Yokohama,Kanagawa
  • Year and Date: 2012-09-25
• [Presentation] Ionization energy enhancement and high temperature operation of single-dopant transistors (2012)
  • Author(s): E. Hamid, D. Moraru, Y. Kuzuya, T.Mizuno, L.T. Anh, H. Mizuta and M. Tabe
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学, 愛媛
  • Year and Date: 2012-09-13
• [Presentation] Ab initio study of Phosphorus donor in Si nano-structures: Wave function analysis of P-doped Si nano wire and P-doped Si nano disk (2012)
  • Author(s): L. T. Anh, D. Moraru, Y. Kuzuya, M. Tabe,H. Mizuta
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学, 愛媛
  • Year and Date: 2012-09-13
• [Presentation] シリコンナノPN接合の電子状態 (2012)
  • Author(s): 葛屋, モラル, 水野, 田部, 水田
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学, 愛媛
  • Year and Date: 2012-09-13
• [Presentation] Ab initio analysis of donor state deepening in Si nano-channels (2012)
  • Author(s): D. Moraru, Y. Kuzuya, E. Hamid, T.Mizuno, M. Tabe and H. Mizuta
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2012-06-11
• [Presentation] シリコンナノ構造におけるリンドナー電子状態の空間分布 (2012)
  • Author(s): 葛屋, モラル, 水野, 田部, 水田
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学, 東京
  • Year and Date: 2012-03-17
• [Presentation] シリコンナノ構造におけるリンドナー電子状態の空間分布 (2012)
  • Author(s): 葛屋陽平, モラルダニエル, 水野武志, 田部道晴, 水田博
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京)
  • Year and Date: 2012-03-17
• [Presentation] 第一原理計算によるシリコンナノトラジスタ中の 単一リン不純物の電子状態解析 (2012)
  • Author(s): 葛屋, モラル, 水野, 田部, 水田
  • Organizer: 電子情報通信学会・電子デバイス研究会・シリコン材料・デバイス研究会
  • Place of Presentation: 北海道大学, 北海道
  • Year and Date: 2012-02-07
• [Presentation] 第一原理計算によるシリコンナノトラジスタ中の単一リン不純物の電子状態解析 (2012)
  • Author(s): 葛屋陽平, モラルダニエル, 水野武志, 田部道晴, 水田博
  • Organizer: 電子情報通信学会・電子デバイス研究会・シリコン材料・デバイス研究会
  • Place of Presentation: 北海道大学(北海道)
  • Year and Date: 2012-02-07
• [Presentation] Ab initio study of Phosphorus donor states in a single dopant transistor with a stub-shaped channel (2012)
  • Author(s): L. T. Anh, Y. Kuzuya, D. Moraru, T. Mizuno, Manoharan M., M. Tabe and H. Mizuta
  • Organizer: Conference on Computational Physics (CCP2012)
  • Place of Presentation: Kobe
• [Presentation] Experimental and ab initio Study of Donor State Deepening in Nanoscale SOI-MOSFETs (2012)
  • Author(s): D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, H. Mizuta, and M. Tabe
  • Organizer: International Union of Materials Research Societies - International Conference on Electronic Materials 2012
  • Place of Presentation: Yokohama
• [Presentation] Ab initio analysis of donor state deepening in Si nano-channels (2012)
  • Author(s): D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe and H. Mizuta
  • Organizer: IEEE Silicon Nanoelectronics Workshop 2012
  • Place of Presentation: Honolulu
• [Presentation] シリコンナノpn接合の電子状態 (2012)
  • Author(s): 葛屋、モラル、水野、田部、水田
  • Organizer: 第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Ab initio study of Phosphorus donor in Si nano-structures: Wave function analysis of P-doped Si nano wire and P-doped Si nano disk (2012)
  • Author(s): L. T. Anh, D. Moraru, Y. Kuzuya, Mi. Tabe, H. Mizuta
  • Organizer: 第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Ionization energy enhancement and high temperature operation of single-dopant transistors (2012)
  • Author(s): E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L.T. Anh, H. Mizuta and M. Tabe
  • Organizer: 第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Single-dopant simulation: DOS and carrier transport(招待講演) (2011)
  • Author(s): H. Mizuta, Y. Kuzuya, D. Moraru, T.Mizuno and M. Tabe
  • Organizer: Italy-Japan Workshop on Single Atom Control for Future Nanoelectronics
  • Place of Presentation: Waseda University, Tokyo
  • Year and Date: 2011-11-10
• [Presentation] Single-dopant simulationm : DOS and carrier transport (2011)
  • Author(s): H.Mizuta, Y.Kuzuya, D.Moraru, T.Mizuno, M.Tabe
  • Organizer: Italy-Japan Workshop on Single Atom Control for Future Nanoelectronics
  • Place of Presentation: Tokyo (Waseda University)(招待講演)
  • Year and Date: 2011-11-10
• [Presentation] Strain effects on avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta and N. Koshida
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  • Place of Presentation: Nagoya, Aichi
  • Year and Date: 2011-09-29
• [Presentation] Strain effects on avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N.Mori, H.Minari, S.Uno, H.Mizuta, N.Koshida
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  • Place of Presentation: Nagoya (Aichi Industry & Labor Center)
  • Year and Date: 2011-09-29
• [Presentation] 少数ドーパントを有するシリコンナノロッドの状態解析 (2011)
  • Author(s): 葛屋, モラル, 水野, 田部, 水田
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学, 山形
  • Year and Date: 2011-09-01
• [Presentation] 少数ドーパントを有するシリコンナノロッドの状態解析 (2011)
  • Author(s): 葛屋陽平, モラルダニエル, 水野武志, 田部道晴, 水田博
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形)
  • Year and Date: 2011-09-01
• [Presentation] 単一ドーパントシミュレーション:ナノ構造内ドーパント原子の状態と電子輸送 (2011)
  • Author(s): モラル, 葛屋, 水野, 田部, 水田
  • Organizer: 第72回応用物理学会学術講演会シンポジウム: Extended CMOS のためのDeterministic ドーピングと単一ドーパントデバイス
  • Place of Presentation: 山形大学, 山形
  • Year and Date: 2011-08-29
• [Presentation] 単一ドーパントシミュレーション:ナノ構造内ドーパント原子の状態と電子輸送 (2011)
  • Author(s): モラルダニエル, 葛屋陽平, 水野武志, 田部道晴, 水田博
  • Organizer: 2011年秋季第72回応用物理学会学術講演会シンポジウム:Extended CMOS のためのDeterministicドーピングと単一ドーパントデバイス
  • Place of Presentation: 山形大学(山形)
  • Year and Date: 2011-08-29
• [Presentation] Impact ionization and avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta and N. Koshida
  • Organizer: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON17)
  • Place of Presentation: Santa Barbara, USA
  • Year and Date: 2011-08-09
• [Presentation] Impact ionization and avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N.Mori, H.Minari, S.Uno, H.Mizuta, N.Koshida
  • Organizer: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON17)
  • Place of Presentation: Santa Barbara (USA)
  • Year and Date: 2011-08-09
• [Presentation] 単一不純物を有するシリコンナノロッドの第一原理解析 (2011)
  • Author(s): 葛屋, 三木, モラル, 水野, 田部, 水田
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 東日本大震災の為、講演予稿集の発行のみ
  • Year and Date: 2011-03-09
• [Presentation] 単一不純物を有するシリコンナノロッドトランジスタの第一原理解析 (2011)
  • Author(s): 葛屋陽平
  • Organizer: 2010年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 東日本大震災の為、講演予稿集の発行のみ
  • Year and Date: 2011-03-09
• [Presentation] Scaled Silicon NEM-SET Hybrid Devices (Invited Talk) (2010)
  • Author(s): Hiroshi Mizuta
  • Organizer: International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  • Place of Presentation: Shanghai
  • Year and Date: 2010-11-03
• [Presentation] Scaled Silicon NEM-SET Hybrid Devices (招待講演) (2010)
  • Author(s): H. Mizuta
  • Organizer: International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-11-02
• [Presentation] Scaled Silicon Nanoelectromechanical Systems (Keynote Lecture) (2010)
  • Author(s): Hiroshi Mizuta
  • Organizer: 7^<th> International Workshop on Functional and Nanostructured Materials (FNMA2010)
  • Place of Presentation: Malta
  • Year and Date: 2010-07-18
• [Presentation] Scaled Silicon Nanoelectromechanical Systems (基調講演) (2010)
  • Author(s): H. Mizuta
  • Organizer: 7th International Workshop on Functional and Nanostructured Materials (FNMA2010)
  • Place of Presentation: Villa Bighi, Malta
  • Year and Date: 2010-07-11