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Controlling of local electro-mechanical properties of few-layer graphen

Research Project

Project/Area Number 22310086
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionThe University of Tokushima

Principal Investigator

NAGASE Masao  徳島大学, 大学院・ソシオテクノサイエンス研究部, 教授 (20393762)

Co-Investigator(Kenkyū-buntansha) SEKINE Yoshiaki  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究, 社員 (70393783)
KAGASHIMA Hiroyuki  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 主任研究員 (70374072)
YAMAGUCHI Hiroshi  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 上席特別研究員 (60374071)
OKAMOTO Hajime  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 研究主任 (20350465)
HIBINO Hiroki  日本電信電話株式会社 NTT 物性科学基礎研究所, 機能物質科学研究部, 部長 (60393740)
Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2011: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Keywordsナノ材料 / マイクロ・ナノデバイス / 計測工学 / グラフェン
Research Abstract

Electrical and mechanical combined properties of graphene on SiC were studied in nano-scale regime. We found the current switching phenomena with very high-on/off ratio (>105) by using a conductive scanning nano-probe. The contact conductance between the probe and graphene can be modulated by a mechanical interaction which makes partially defined graphene nano-membrane. Our findings open a path to applications of electro-mechanical properties of graphene.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (83 results)

All 2013 2012 2011 2010 Other

All Journal Article (22 results) (of which Peer Reviewed: 20 results) Presentation (51 results) (of which Invited: 1 results) Book (4 results) Remarks (4 results) Patent(Industrial Property Rights) (2 results) (of which Overseas: 1 results)

  • [Journal Article] Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio2013

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      Appl. Phys. Expres

      Volume: 6 Issue: 5 Pages: 055101-055101

    • DOI

      10.7567/apex.6.055101

    • NAID

      10031174336

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article]2012

    • Author(s)
      R. O, A. Iwamoto, Y. Nishi, Y. Funase, T. Yuasa, T. Tomita, M. Nagase, H. Hibino, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Issue: 6S Pages: 06FD06-06FD06

    • DOI

      10.1143/jjap.51.06fd06

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Physics of epitaxial graphene on SiC(0001)2012

    • Author(s)
      H. Kageshima, H. Hibino, and S. Tanabe
    • Journal Title

      J. Phys. Condens. Matter

      Volume: Vol. 24 Issue: 31 Pages: 314215-314215

    • DOI

      10.1088/0953-8984/24/31/314215

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth and electronic transport properties of epitaxial graphene on SiC(0001)2012

    • Author(s)
      H. Hibino, S. Tanabe, S. Mizuno, and H. Kageshima
    • Journal Title

      J. Phys. D : Appl. Phys.

      Volume: 45 Issue: 15 Pages: 154008-154008

    • DOI

      10.1088/0022-3727/45/15/154008

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2011

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y. Sekine and H. Yamaguchi
    • Journal Title

      AIP Conf. Proc.

      Volume: 1399 Pages: 755-756

    • DOI

      10.1063/1.3666596

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier transport mechanism in graphene on SiC(0001)2011

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
    • Journal Title

      Phys. Rev. B

      Volume: 94 Issue: 11 Pages: 115458-115458

    • DOI

      10.1103/physrevb.84.115458

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study on magnetoelectric and thermoelectric properties for graphene devices2011

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 7R Pages: 95601-95601

    • DOI

      10.1143/jjap.50.070115

    • NAID

      210000070798

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of bandgap in epitaxial bilayer graphene field effect transistor2011

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 4S Pages: 04DN04-04DN04

    • DOI

      10.1143/jjap.50.04dn04

    • NAID

      210000070405

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electronic transport properties of top-gated monolayer and bilayer graphene devices on Si2011

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, H. Hibino
    • Journal Title

      Mater. Res. Soc. Symp. Proc

      Volume: 1283 Pages: 675-680

    • DOI

      10.1557/opl.2011.675

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface2011

    • Author(s)
      H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 9R Pages: 381-386

    • DOI

      10.1143/jjap.50.095601

    • NAID

      40019010403

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces2010

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y.Sekine, and H. Yamaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 115103-115103

    • NAID

      10027442141

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices2010

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3 Issue: 7 Pages: 075102-075102

    • DOI

      10.1143/apex.3.075102

    • NAID

      10026495507

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Study on Thermoelectric Properties of Graphene2010

    • Author(s)
      H. Kageshima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 49 Issue: 10R Pages: 100207-100207

    • DOI

      10.1143/jjap.49.100207

    • NAID

      40017341194

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Direct Actuation of GaAs Membrane Resonator by Scanning Probe2010

    • Author(s)
      M. Nagase, K. Tamaru, K. Nonaka, S. Warisawa, S. Ishihara, H. Yamaguchi
    • Journal Title

      NTT Technical Rev

      Volume: 8 Pages: 1-7

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] SiC 上エピタキシャルグラフェン成長の理論検討2010

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Journal Title

      日本結晶成長学会誌

      Volume: 37 Pages: 190-195

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] SiC 上エピタキシャルグラフェンの成長と評価2010

    • Author(s)
      日比野浩樹, 影島博之, 田邉真一, 永瀬雅夫
    • Journal Title

      固体物理

      Volume: 45 Pages: 645-655

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices2010

    • Author(s)
      Shinichi Tanabe, et al.
    • Journal Title

      Appl.Phys.Express

      Volume: 3

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Study on Thermoelectric Properties of Graphene2010

    • Author(s)
      Hiroyuki Kageshima
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 49

    • NAID

      40017341194

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Actuation of GaAs Membrane Resonator by Scanning Probe2010

    • Author(s)
      Masao Nagase, et al.
    • Journal Title

      NTT Technical Rev.

      Volume: 8

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] SiC上エピタキシャルグラフェン成長の理論検討2010

    • Author(s)
      影島博之, 他
    • Journal Title

      日本結晶成長学会誌

      Volume: 37 Pages: 190-195

    • Related Report
      2010 Annual Research Report
  • [Journal Article] SiC上エピタキシャルグラフェンの成長と評価2010

    • Author(s)
      日比野浩樹, 他
    • Journal Title

      固体物理

      Volume: 45 Pages: 645-655

    • Related Report
      2010 Annual Research Report
  • [Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces2010

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Journal Title

      Appl.Phys.Express

      Volume: 3

    • NAID

      10027442141

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] SiC(0001)面上エピタキシャルグラフェン成長の初期過程2012

    • Author(s)
      影島博之, 他
    • Organizer
      日本物理学会2012年春季第67回年次大会
    • Place of Presentation
      関西学院大学(兵庫県)
    • Year and Date
      2012-03-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] 4H-SiC(0001)上エピタキシャルグラフェンの表面ラフネスと層数均一性との相関2012

    • Author(s)
      田尾拓人, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] ひずみによるラマンシフトを用いたSiC上グラフェンの層数評価2012

    • Author(s)
      呉龍錫, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] 疑似的にフリースタンドした1層及び2層エピタキシャルグラフェンの伝導特性2012

    • Author(s)
      田邉真一, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC上グラフェンの物性評価と応用技術について2012

    • Author(s)
      永瀬雅夫
    • Organizer
      第105回黒鉛化合物研究会
    • Place of Presentation
      関西大学(大阪府)(招待講演)
    • Year and Date
      2012-01-27
    • Related Report
      2011 Annual Research Report
  • [Presentation] Role of steps and edges in epitaxial graphene growth on SiC(0001)2011

    • Author(s)
      Kageshima H, et al
    • Organizer
      International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-
    • Place of Presentation
      タワーホール船堀(東京都)
    • Year and Date
      2011-12-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] グラフェンの物性とデバイス応用2011

    • Author(s)
      永瀬雅夫
    • Organizer
      応物九州支部オータムスクール
    • Place of Presentation
      九州大学(鹿児島県)(招待講演)
    • Year and Date
      2011-11-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] 集積化ナノプローブによる表面物性評価2011

    • Author(s)
      永瀬雅夫
    • Organizer
      第40回薄膜・表面物理基礎講座
    • Place of Presentation
      産業技術総合研究所臨海副都心センター(東京都)(招待講演)
    • Year and Date
      2011-11-10
    • Related Report
      2011 Annual Research Report
  • [Presentation] Microscopic Raman mapping for epitaxial graphene on 4H-SiC (0001)2011

    • Author(s)
      O R, et al
    • Organizer
      24th Int.Microprocesses and Nanotechnology Conf.(MNC2011)
    • Place of Presentation
      全日空ホテル京都(京都府)
    • Year and Date
      2011-10-27
    • Related Report
      2011 Annual Research Report
  • [Presentation] グラフェンとその応用2011

    • Author(s)
      永瀬雅夫
    • Organizer
      学振・第133委員会第211回研究会
    • Place of Presentation
      理科大(東京都)(招待講演)
    • Year and Date
      2011-10-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC上グラフェンの物性評価技術2011

    • Author(s)
      永瀬雅夫
    • Organizer
      炭素材料学会10月セミナー
    • Place of Presentation
      日本教育会館(東京都)(招待講演)
    • Year and Date
      2011-10-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] 新規カーボン材料グラフェンの基礎物性と応用可能性について2011

    • Author(s)
      永瀬雅夫
    • Organizer
      日本セラミックス協会関西支部第14回若手フォーラム
    • Place of Presentation
      関西大学セミナーハウス(奈良県)(招待講演)
    • Year and Date
      2011-10-07
    • Related Report
      2011 Annual Research Report
  • [Presentation] Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)2011

    • Author(s)
      Kageshima H, et al
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM2011)
    • Place of Presentation
      愛知県産業労働センター(愛知県)
    • Year and Date
      2011-09-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] トレンチモデルを用いたSiC(0001)上グラフェン成長の検討2011

    • Author(s)
      影島博之, 他
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2011-09-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] 電子顕微鏡によるグラフェン観察2011

    • Author(s)
      永瀬雅夫
    • Organizer
      SCANTECH2011第20回記念講演会
    • Place of Presentation
      東京都市大学(東京都)(招待講演)
    • Year and Date
      2011-09-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] 単層エピタキシャルグラフェンの特異な抵抗の温度依存性2011

    • Author(s)
      田邉真一, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] エピタキシャルグラフェンの摩擦力の層数依存評価2011

    • Author(s)
      船瀬雄也, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] ラマン分光法によるSiC上グラフェンの内部応力解析2011

    • Author(s)
      岩本篤, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC(0001)上エピタキシャルグラフェン成長におけるSi脱離とC吸着の効果の比較2011

    • Author(s)
      影島博之, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] グラフェンメンブレンの形状変化2011

    • Author(s)
      西勇輝, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] グラフェンの基礎と材料としての魅力2011

    • Author(s)
      永瀬雅夫, 他
    • Organizer
      日本化学会講演会「グラフェンの魅力~基礎と応用の観点から」
    • Place of Presentation
      日本化学会7階ホール(東京都)(招待講演)
    • Year and Date
      2011-07-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011

    • Author(s)
      影島博之, 他
    • Organizer
      応用物理学会シリコンテクノロジー分科会第137回研究集会
    • Place of Presentation
      名古屋大学(愛知県)(招待講演)
    • Year and Date
      2011-07-03
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC上グラフェンの表面増強ラマン散乱2011

    • Author(s)
      関根佳明, 他
    • Organizer
      日本物理学会 第66回年次大会
    • Place of Presentation
      新潟市
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] エピタキシャルグラフェンのHall移動度評価2011

    • Author(s)
      田邉真一, 他
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木市
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] ラマン分光法による4H-SiC上エピタキシャルグラフェンの膜質評価2011

    • Author(s)
      呉龍錫, 他
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木市
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiC(0001)面上でのSi脱離とグラフェン形成2011

    • Author(s)
      影島博之, 他
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木市
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] ナノプロセスと材料による新たなデバイスの創出2011

    • Author(s)
      永瀬雅夫
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      厚木市(招待講演)
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Theoretical study on epitaxial graphene growth on SiC(0001) surface2011

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Organizer
      2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology (IWDTF2011)
    • Place of Presentation
      Tokyo, Japan(Invited)
    • Year and Date
      2011-01-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] Surface-enhanced Raman spectroscopy of graphene grown on SiC2011

    • Author(s)
      Sekine Yoshiaki, et al.
    • Organizer
      The International Symposium on Nanoscale Transport and Technology (ISNTT2011)
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-01-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface2011

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Organizer
      The International Symposium on Nanoscale Transport and Technology (ISNTT2011)
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-01-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC2010

    • Author(s)
      Shinichi Tanabe, et al.
    • Organizer
      The 2010 Fall Meeting of the Materials Research Society (MRS)
    • Place of Presentation
      Boston, USA
    • Year and Date
      2010-12-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] グラフェン材料開発の最前線2010

    • Author(s)
      永瀬雅夫
    • Organizer
      学振・将来加工技術第136委員会 第11回研究会(合同)
    • Place of Presentation
      東京都(招待講演)
    • Year and Date
      2010-11-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Theoretical study on growth, structure, and physical properties of graphene on SiC2010

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Organizer
      "Japan-Korea Symposium on Surface and Nanostructure 9th" (JKSSN9)
    • Place of Presentation
      Sendai, Japan(Invited)
    • Year and Date
      2010-11-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 「グラフェン」物性,評価技術2010

    • Author(s)
      永瀬雅夫
    • Organizer
      MNC技術セミナー
    • Place of Presentation
      北九州市(招待講演)
    • Year and Date
      2010-11-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Theoretical study on functions of graphene2010

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Organizer
      International Symposium on Graphene Devices 2010 (ISGD2010)
    • Place of Presentation
      Sendai, Japan(Invited)
    • Year and Date
      2010-10-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Electrical contact properties of few-layer graphene on SiC substrate2010

    • Author(s)
      Masao Nagase, et al.
    • Organizer
      International Symposium on Graphene Devices 2010 (ISGD2010)
    • Place of Presentation
      Sendai, Japan(Invited)
    • Year and Date
      2010-10-28
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth, structure, and transport properties of epitaxial graphene on SiC2010

    • Author(s)
      Hiroki Hibino, et al.
    • Organizer
      International Symposium on Graphene Devices 2010 (ISGD2010)
    • Place of Presentation
      Sendai, Japan(Invited)
    • Year and Date
      2010-10-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Observation of bandgap in epitaxial bilayer graphene field effect transistors2010

    • Author(s)
      Shinichi Tanabe, et al.
    • Organizer
      2010 International Conference on Solid State Devices and Materials (SSDM2010)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] 単層エピタキシャルグラフェンにおける半整数量子ホール効果の観測2010

    • Author(s)
      田邉真一, 他
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiC上エピタキシャルグラフェンのステップ境界2010

    • Author(s)
      影島博之, 他
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] Surface Electron Microscopy of Epitaxial Graphene2010

    • Author(s)
      Hiroki Hibino, et al.
    • Organizer
      Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG2)
    • Place of Presentation
      Amelia Island, Florida, USA(Invited)
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Contact conductance measurement of nano-membrane structure of graphene on SiC2010

    • Author(s)
      Masao Nagase, et al.
    • Organizer
      18th International Vacuum Congress (IVC- 18)/International Conference on Nanoscience and Technology (ICN+T 2010)/14th International Conference on Surfaces Science (ICSS-14)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-5)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-08-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2010

    • Author(s)
      Hiroyuki Kageshima, et al.
    • Organizer
      30th International Conference on the Physics of Semiconductors (ICPS2010)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-06-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] グラフェン研究の現状と新規材料としての可能性について2010

    • Author(s)
      永瀬雅夫
    • Organizer
      CPC研究会
    • Place of Presentation
      東京都(招待講演)
    • Year and Date
      2010-06-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] グラフェンの基礎物性と応用技術

    • Author(s)
      永瀬 雅夫
    • Organizer
      Advance Metallization Conf. 2012
    • Place of Presentation
      東京大学(東京都)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Conductive carbon nanoprobe fabricated by focused ion beam assisted chemical vapor deposition

    • Author(s)
      Nagase Masao
    • Organizer
      International Conference on Nanoscience + Technology 2012
    • Place of Presentation
      ソルボンヌ大(フランス)
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC上グラフェンによる原子層スイッチ

    • Author(s)
      西 勇輝
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC上グラフェンのラマンスペクトル測定における基板効果の評価

    • Author(s)
      岩田 義之
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC上グラフェン架橋構造作製のための電解エッチング条件の 検討

    • Author(s)
      呉 龍錫
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 走査型摩擦力顕微鏡を用いたナノ摩擦係数測定

    • Author(s)
      伊澤 輝記
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC上グラフェンの不均一成長メカニズム

    • Author(s)
      奥村 俊夫
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Book] エヌテーエス、グラフェンが拓く材料の新領域 -物性・作製法から実用化まで-2012

    • Author(s)
      瀬雅夫
    • Publisher
      日比野浩樹
    • Related Report
      2012 Final Research Report
  • [Book] グラフェンが拓く材料の新領域 ∼物性・作製法から実用化まで∼2012

    • Author(s)
      永瀬 雅夫
    • Total Pages
      233
    • Publisher
      エヌティーエス
    • Related Report
      2012 Annual Research Report
  • [Book] ノカーボンの応用と実用化 フラーレン,ナノチューブ,グラフェンを中心に2011

    • Author(s)
      永瀬雅夫
    • Publisher
      シーエムシー出版
    • Related Report
      2012 Final Research Report
  • [Book] ナノカーボンの応用と実用化-フラーレン,ナノチューブ,グラフェンを中心に-2011

    • Author(s)
      永瀬雅夫, 他
    • Publisher
      シーエムシー出版
    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://graphene.ee.tokushima-u.ac.jp/

    • Related Report
      2012 Final Research Report
  • [Remarks] 永瀬研究室

    • URL

      http://graphene.ee.tokushima-u.ac.jp

    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://graphene.ee.tokushima-u.ac.jp/

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://graphene.ee.tokushima-u.ac.jp/index.html

    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] グラフェンおよびその製造方法2013

    • Inventor(s)
      永瀬雅夫
    • Industrial Property Rights Holder
      徳島大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-02-22
    • Related Report
      2012 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] グラフェンおよびその製造方法2012

    • Inventor(s)
      永瀬雅夫
    • Industrial Property Rights Holder
      徳島大学
    • Industrial Property Number
      2012-038609
    • Filing Date
      2012-02-24
    • Related Report
      2011 Annual Research Report

URL: 

Published: 2010-08-23   Modified: 2019-07-29  

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