| Project/Area Number |
22340080
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
ITO Hiroshi 名古屋大学, 大学院・工学研究科, 准教授 (10260374)
TANAKA Hisaaki 名古屋大学, 大学院・工学研究科, 助教 (50362273)
MARUMOTO Kazuhiro 筑波大学, 大学院・数理物質科学科, 准教授 (50293668)
SHIMOI Yukihiro 産業技術総合研究所, ナノシステム研究部門, 上級主任研究員 (70357226)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2012: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Keywords | 有機半導体 / 電子スピン共鳴 / 有機電界効果トランジスタ / 非線形素励起 / 導電性高分子 / 理論計算 / 有機電解効果トランジスタ / 電界注入 / ルブレン / ペンタセン / フラーレン / ポリアルキルチオフェン / ポーラロン |
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| Research Abstract |
In this study, field-induced electron spin resonance (FI-ESR) method is applied to directly detect the spins of charge carries at the interface of organic FETs. Microscopic information such as electronic and spin states of charge carries and local molecular orientation is obtained, which is crucial in understanding the device functions. In high-mobility thin-film transistors of a thienothiophene-based molecule C8-BTBT , FI-ESR has provided evidence for the charge carrier motion even at 4K within highly crystalline domains. Correlation between mobility anisotropy and uniaxial orientation of polymer chains has been clarified in ultrathin polymeric transistors and correlation between the interface chemical treatments and mobility enhancement has been revealed in crystalline transistors of rubrene. Further, in high-density carrier injections, crossover from polarons with spins to spinless bipolarons or polaron pairs is suggested in both polymeric and molecular FETs.
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