Magnetoresistance through Si channel using Heusler alloy source and drain electrodes
| Project/Area Number |
22360002
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
TEZUKA Nobuki 東北大学, 大学院・工学研究科, 准教授 (40323076)
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| Co-Investigator(Kenkyū-buntansha) |
SAITO Yoshiaki 株式会社東芝, 研究開発センター, 研究主幹 (80393859)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2012: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2011: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2010: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Keywords | スピントロニクス / スピン注入 / 半導体 / ホイスラー合金 / 磁気抵抗効果 / 高スピン分極率材料 / Si半導体 / ハンル効果 / エピタキシャル |
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| Research Abstract |
Spin injection from ferromagnetic electrode to Si semiconductor was investigated. The electrodes of Heusler electrodes which possess high spin polarization bring high spin injection efficiency. This comes from the success of the fabrication of highly oriented MgO and Co based Heusler alloy layer on Si substrates. Spin injection efficiency is great influenced by spin accumulation effect and band structure of CoFe from the results for the Si/MgO/CoFe junctions.
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Report
(4 results)
Research Products
(71 results)
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[Presentation] Spin-based MOSFET and Its Applications2011
Author(s)
Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto
Organizer
[Invited], Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor III (ULSI vs. TFT 3)
Place of Presentation
Hong Kong, China
Year and Date
2011-07-01
Related Report
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[Presentation] Spin-based MOSFET and Its Applications2011
Author(s)
Y.Saito, T.Inokuchi, M.Ishikawa, H.Sugiyama, T.Marukame, T.Tanamoto
Organizer
Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor III (ULSI vs.TFT 3)
Place of Presentation
Hong Kong, China(Invited)
Year and Date
2011-07-01
Related Report
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