Magnetoresistance through Si channel using Heusler alloy source and drain electrodes

• Project/Area Number: 22360002
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: TEZUKA Nobuki 東北大学, 大学院・工学研究科, 准教授 (40323076)
• Co-Investigator(Kenkyū-buntansha): SAITO Yoshiaki 株式会社東芝, 研究開発センター, 研究主幹 (80393859)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000); Fiscal Year 2012: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2011: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000); Fiscal Year 2010: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
• Keywords: スピントロニクス / スピン注入 / 半導体 / ホイスラー合金 / 磁気抵抗効果 / 高スピン分極率材料 / Si半導体 / ハンル効果 / エピタキシャル

Research Abstract

Spin injection from ferromagnetic electrode to Si semiconductor was investigated. The electrodes of Heusler electrodes which possess high spin polarization bring high spin injection efficiency. This comes from the success of the fabrication of highly oriented MgO and Co based Heusler alloy layer on Si substrates. Spin injection efficiency is great influenced by spin accumulation effect and band structure of CoFe from the results for the Si/MgO/CoFe junctions.

Research Products

• [Journal Article] Si 上に作製した Co_2FeAl_<0.5>Si_<0.5フルホイスラー合金薄膜の結晶構造とスピン伝 導特性 (2013)
  • Author(s): 吉田昌弘、小野寺学史、手束展規、杉本諭、斉藤好昭
  • Journal Title: 日本金属学会誌 Volume: Vol. 77, No. 3 Pages: 85-88
  • NAID: 10031155989
  • URL: http://www.jim.or.jp/journal/j/
  • Peer Reviewed
• [Journal Article] Si 基板上への(001)配向 MgO 薄膜の作製 (2013)
  • Author(s): 小野寺学史、吉田昌弘、手束展規、杉本 諭、斉藤好昭
  • Journal Title: 日本金属学会誌 Volume: Vol. 77, No. 3 Pages: 89-93
  • NAID: 10031155990
  • URL: http://www.jim.or.jp/journal/j/
  • Peer Reviewed
• [Journal Article] Non-local and Local Spin Signals in a Lateral Spin Transport Device with Schottky Tunnel Junctions (2013)
  • Author(s): T. Saito, N. Tezuka, M. Matsuura and S. Sugimoto
  • Journal Title: IEEE Trans.Magn Volume: 40(7)
  • URL: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20)
  • Peer Reviewed
• [Journal Article] Si上に作製したCo2FeAl0.5Si0.5フルホイスラー合金薄膜の結晶構造とスピン伝導特性 (2013)
  • Author(s): 吉田昌弘, 小野寺学史, 手束展規, 杉本諭, 斉藤好昭
  • Journal Title: 日本金属学会誌 Volume: 77 Pages: 85-88
  • Peer Reviewed
• [Journal Article] Si基板上への(001)配向MgO薄膜の作製 (2013)
  • Author(s): 小野寺学史, 吉田昌弘, 手束展規, 杉本諭, 斉藤好昭
  • Journal Title: 日本金属学会誌 Volume: 77 Pages: 89-93
  • NAID: 10031155990
  • Peer Reviewed
• [Journal Article] Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices (2012)
  • Author(s): Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka
  • Journal Title: IEEE Tran. Magn Volume: 48(11) Pages: 2739-2745
  • URL: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
  • Peer Reviewed
• [Journal Article] New materials research for high spin polarized current (2012)
  • Author(s): N. Tezuka, J. Magn
  • Journal Title: Magn. Mat Volume: 324 Pages: 3588-3592
  • URL: http://www.sciencedirect.com/science/journal/03048853
  • Peer Reviewed
• [Journal Article] Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co_2FeAl_<0.5>Si_<0.5> Heusler electrodes on MgO (110) single substrates (2012)
  • Author(s): N. Tezuka, F. Mitsuhashi, and S. Sugimoto
  • Journal Title: J. Appl. Phys Volume: 111
  • URL: http://jap.aip.org/
  • Peer Reviewed
• [Journal Article] Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co_2FeAl_<0.5>Si_<0.5>/n-GaAs Schottky Tunnel Junction (2012)
  • Author(s): T. Saito, N. Tezuka, S. Sugimoto
  • Journal Title: MATERIALS TRANSACTIONS Volume: 53 Pages: 641-644
  • NAID: 10030550604
  • URL: http://www.jim.or.jp/journal/e/
  • Peer Reviewed
• [Journal Article] Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements (2012)
  • Author(s): T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, and N. Tezuka
  • Journal Title: J. Appl. Phys Volume: 111
  • URL: http://jap.aip.org/
  • Peer Reviewed
• [Journal Article] Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices (2012)
  • Author(s): Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka,
  • Journal Title: IEEE Tran. Magn Volume: 48 Pages: 2739-2745
  • Peer Reviewed
• [Journal Article] New materials research for high spin polarized current (2012)
  • Author(s): N. Tezuka
  • Journal Title: J. Magn. Magn. Mat. Volume: 324 Pages: 3588-3592
  • Peer Reviewed
• [Journal Article] Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co2FeAl0.5Si0.5 Heusler electrodes on MgO (110) single substrates (2012)
  • Author(s): N. Tezuka, F. Mitsuhashi, and S. Sugimoto
  • Journal Title: J. Appl. Phys. Volume: 111
  • Peer Reviewed
• [Journal Article] Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junction (2012)
  • Author(s): T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, and N. Tezuka
  • Journal Title: J. Appl. Phys. Volume: 111
  • NAID: 130004694464
  • Peer Reviewed
• [Journal Article] Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junction (2012)
  • Author(s): Tatsuya Saito, Nobuki Tezuka, Satoshi Sugimoto
  • Journal Title: Materials Transactions Volume: 53 Pages: 641-644
  • NAID: 130004694464
  • Peer Reviewed
• [Journal Article] Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co2FeAl0.5Si0.5 Heusler electrodes on MgO (110) single substrates (2012)
  • Author(s): N.Tezuka, F.Mitsuhashi, S.Sugimoto
  • Journal Title: Journal of Applied Physics Volume: 111
  • Peer Reviewed
• [Journal Article] Structural and Magnetic Properties ofCo_2FeAl_<0.5>Si_<0.5> Full-Heusler Alloy Thin Films Deposited on Si Substrates by Molecular Beam Epitaxy (2011)
  • Author(s): T. Saito, K. Kano, N. Tezuka, S.Sugimoto
  • Journal Title: JOURNAL OF THE JAPAN INSTITUTE OF METALS Volume: 75 Pages: 141-145
  • Peer Reviewed
• [Journal Article] Spin-based MOSFET and Its Applications (2011)
  • Author(s): Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, and T. Tanamoto
  • Journal Title: Journal of The Electrochemical Society Volume: 158(10)
  • URL: http://jes.ecsdl.org/
  • Peer Reviewed
• [Journal Article] Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements (2011)
  • Author(s): T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka
  • Journal Title: J. Appl. Phys Volume: 111
  • URL: http://jap.aip.org/
  • Peer Reviewed
• [Journal Article] Spin-based MOSFETの現状と展望 (2011)
  • Author(s): 斉藤好昭
  • Journal Title: まぐね/MagneticsJpn. Volume: Vol6,No.1 Pages: 16-22
  • NAID: 10027851044
  • URL: http://www.magnetics.jp/journal/magne.html
  • Peer Reviewed
• [Journal Article] Spin Injection, Transport, and Read/Write Operation in Spin-based MOSFET (2011)
  • Author(s): Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto
  • Journal Title: Thin Solid Films Volume: 519 Pages: 8266-8273
  • URL: http://www.magnetics.jp/journal/magne.html
  • Peer Reviewed
• [Journal Article] Electrical Transport Properties and Spin Injection in Co_2FeAl_<0.5>Si_<0.5>/GaAs Junctions (2011)
  • Author(s): T. Saito, N. Tezuka, S. Sugimoto
  • Journal Title: IEEE TRANSACTIONS ON MAGNETICS Volume: 47 Pages: 2447-2450
  • Peer Reviewed
• [Journal Article] Magnetoresistance effect of tunnel junctions using Co_2(Ti, Mn)Z (Z = Al, Si) Heusler alloys (2011)
  • Author(s): A. Sasaki, N. Tezuka, L. Jiang, S. Sugimoto
  • Journal Title: J. Appl. Phys Volume: 109
  • URL: http://jap.aip.org/
  • Peer Reviewed
• [Journal Article] Structural and Magnetic Properties of Co_2FeAl_<0.5>Si_<0.5> Full-Heusler Alloy Thin Films on GaAs Substrates (2011)
  • Author(s): T. Saito, N. Tezuka, S.
  • Journal Title: MATERIALS TRANSACTIONS Volume: 52 Pages: 370-373
  • NAID: 10027838287
  • URL: http://www.jim.or.jp/journal/e/
  • Peer Reviewed
• [Journal Article] Electrical Transport Properties and Spin Injection in Co2FeAl0.5Si0.5/GaAs Junctions (2011)
  • Author(s): Tatsuya Saito, Nobuki Tezuka, Satoshi Sugimoto
  • Journal Title: IEEE TRANSACTIONS ON MAGNETICS Volume: 47 Pages: 2447-2450
  • Peer Reviewed
• [Journal Article] Spin-based MOSFET and Its Applications (2011)
  • Author(s): Y.Saito, T.Inokuchi, M.Ishikawa, H.Sugiyama, T.Marukame, T.Tanamoto
  • Journal Title: Journal of The Electrochemical Society Volume: 153
  • Peer Reviewed
• [Journal Article] Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements (2011)
  • Author(s): T.Inokuchi, M.Ishikawa, H.Sugiyama, Y.Saito, N.Tezuka
  • Journal Title: Journal of Applied Physics Volume: 111
  • Peer Reviewed
• [Journal Article] MBEによりSi基板上に成膜されたCo_2FeAl_<0.5>Si_<0.5>薄膜の結晶構造と磁気特性 (2011)
  • Author(s): 斎藤達哉、加納顕、手束展規、杉本諭
  • Journal Title: 日本金属学会誌 Volume: Vo75, No.3 Pages: 141-145
  • NAID: 10027839583
  • Peer Reviewed
• [Journal Article] Spin-based MOSFETの現状と展望 (2011)
  • Author(s): 斉藤好昭
  • Journal Title: まぐね/Magnetics Jpn. Volume: Vol6, No.1 Pages: 16-22
  • NAID: 10027851044
• [Journal Article] Spin Injection, Transport, and Read/Write Operation in Spin-based MOSFET (2011)
  • Author(s): Y.Saito, T.Marukame, M.Ishikawa, T.Inokuchi, H.Sugiyama, T.Tanamoto
  • Journal Title: Thin Solid Films Volume: (未定)(印刷中)
  • Peer Reviewed
• [Presentation] 3端子Hanle信号のバイアス電圧依存性 (2013)
  • Author(s): 石川瑞恵、杉山英行、井口智明、棚本哲史、浜屋宏平、手束展規、斉藤好昭
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-28
• [Presentation] 高スピン分極率材料を用いた磁気抵抗効果 (2013)
  • Author(s): 手束展
  • Organizer: 日本金属学会2013年春期講演大会
  • Place of Presentation: 東京理科大学
  • Year and Date: 2013-03-28
• [Presentation] Si/MgO/ Co_2Feal_<0.5>Si_<0.5>構造の結晶構造および電気伝導特性 (2013)
  • Author(s): 小野寺学史、吉田昌弘、手束展規、松浦昌志、杉本諭、斉藤好昭
  • Organizer: 日本金属学会2013年春期講演大会
  • Place of Presentation: 東京理科大学
  • Year and Date: 2013-03-28
• [Presentation] Co_2Feal_<0.5>Si_<0.5>電極の構造規則度とn-GaAsへのスピン注入・検出効率 (2013)
  • Author(s): 斎藤達哉、手束展規、松浦昌志、杉本諭
  • Organizer: 日本金属学会2013年春期(152回)大会
  • Place of Presentation: 東京理科大学
  • Year and Date: 2013-03-28
• [Presentation] Non-local and Local Signals in lateral spin transport device with Co_2Feal_<0.5>Si_<0.5>/GaAs Junctions (2013)
  • Author(s): T. Saito, N. Tezuka, M. Matsuura and S. Sugimoto
  • Organizer: Japan-Russia Workshop on Advanced Materials Synthesis Process and Nanostructure
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2013-03-03
• [Presentation] Spin accumulation in Si for CoFe/MgO/Mg/Si-on-insulator devices (2013)
  • Author(s): H. Sugiyama, M. Ishikawa, T. Inokuchi, H. T. Tanamoto, K. Hamaya, Y. Saito, N. Tezuka
  • Organizer: Joint MMM/Intermag Conference
  • Place of Presentation: Chicago, USA
  • Year and Date: 2013-01-25
• [Presentation] Non-local and Local Signals for Co_2Feal_<0.5>Si_<0.5>/n-GaAs Junctions (2013)
  • Author(s): T. Saito, N. Tezuka, M. Matsuura and S. Sugimoto
  • Organizer: 12th Joint MMM/ Intermag Conference
  • Place of Presentation: Chicago, USA.
  • Year and Date: 2013-01-15
• [Presentation] 3端子Hanle信号のバイアス電圧依存性 (2013)
  • Author(s): 石川瑞恵，杉山英行，井口智明，棚本哲史，浜屋宏平，手束展規，斉藤好昭
  • Organizer: 60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
• [Presentation] 高スピン分極率材料を用いた磁気抵抗効果 (2013)
  • Author(s): 手束展規
  • Organizer: 日本金属学会2013年春期講演大会
  • Place of Presentation: 東京
  • Invited
• [Presentation] Si/MgO/ Co2FeAl0.5Si0.5構造の結晶構造および電気伝導特性 (2013)
  • Author(s): 小野寺学史, 吉田昌弘, 手束展規, 松浦昌志, 杉本諭, 斉藤好昭
  • Organizer: 日本金属学会 2013年春期大会,
  • Place of Presentation: 東京
• [Presentation] Spin accumulation in Si for CoFe/MgO/Mg/Si-on-insulator devices (2013)
  • Author(s): H. Sugiyama, M. Ishikawa, T. Inokuchi, H. T. Tanamoto, K. Hamaya, Y. Saito, N. Tezuka
  • Organizer: Joint MMM/Intermag Conference
  • Place of Presentation: シカゴ、米国
• [Presentation] Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/MgO/SOI devices (2012)
  • Author(s): M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka, Y. Saito
  • Organizer: International conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Kyoto, JAPAN
  • Year and Date: 2012-09-27
• [Presentation] 8.Co_2Feal_<0.5>Si_<0.5>/n-GaAs接合における非局所4端子測定シグナルのCo_2Feal_<0.5>Si_<0.5>成膜温度依存性 (2012)
  • Author(s): 斎藤達哉、手束展規、杉本諭
  • Organizer: 日本金属学会2012年秋期(151回)大会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-18
• [Presentation] Si上に作製したCo_2Feal_<0.5>Si_<0.5>フルホイスラー合金薄膜の結晶構造および電気伝導特性 (2012)
  • Author(s): 吉田昌弘、小野寺学史、手束展規、杉本諭、斉藤好昭
  • Organizer: 日本金属学会2012年秋期(151回)大会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-18
• [Presentation] Si基板上への(001)配向MgO薄膜の作製 (2012)
  • Author(s): 小野寺学史、吉田昌弘、手束展規、杉本諭、斉藤好昭
  • Organizer: 日本金属学会2012年秋期(151回)大会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-17
• [Presentation] Fabricating Temperature Dependency of Spin Injection Signals for Co_2Feal_<0.5>Si_<0.5> / n-GaAs Schottky Tunnel Junctions (2012)
  • Author(s): T. Saito, N. Tezuka and S. Sugimoto
  • Organizer: 2012 International Magnetics Conference
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2012-05-10
• [Presentation] Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices (2012)
  • Author(s): Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, N. Tezuka
  • Organizer: [Invited], IEEE International magnetic conference2012 (Intermag 2012)
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2012-05-08
• [Presentation] CoFe/AlOx/Siにおけるスピン依存伝導特性の評価 (2012)
  • Author(s): 井口智明、石川瑞恵、杉山英行、斉藤好昭、手束展規
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] CoFe/AlOx/Siにおけるスピン依存伝導特性の評価 (2012)
  • Author(s): 井口智明, 石川瑞恵, 杉山英行, 斉藤好昭, 手束展規
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、早稲田
  • Year and Date: 2012-03-17
• [Presentation] Si基板上への(001)配向MgO薄膜の作製 (2012)
  • Author(s): 小野寺学史, 吉田昌弘, 手束展規, 杉本諭, 斉藤好昭
  • Organizer: 日本金属学会2012年秋期講演大会
  • Place of Presentation: 松山
• [Presentation] Si上に作製したCo2FeAl0.5Si0.5フルホイスラー合金薄膜の結晶構造および電気伝導特性 (2012)
  • Author(s): 吉田昌弘, 小野寺学史, 手束展規, 杉本諭, 斉藤好昭
  • Organizer: 日本金属学会2012年秋期講演大会
  • Place of Presentation: 松山
• [Presentation] Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices (2012)
  • Author(s): Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, N. Tezuka
  • Organizer: Intermag 2012
  • Place of Presentation: バンクーバー、カナダ
  • Invited
• [Presentation] Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/MgO/SOI devices (2012)
  • Author(s): M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka, Y. Saito
  • Organizer: International conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: 京都
• [Presentation] Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements (2011)
  • Author(s): T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka
  • Organizer: 56th Annual Conference on Magnetism & Magnetic Materials
  • Place of Presentation: Phoenix, USA
  • Year and Date: 2011-11-03
• [Presentation] Y.S Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements (2011)
  • Author(s): T.Inokuchi, M.Ishikawa, H.Sugiyama, Y.Saito, N.Tezuka
  • Organizer: The 56th Magnetism and Magnetic Materials Conference
  • Place of Presentation: Scottsdale, USA
  • Year and Date: 2011-11-03
• [Presentation] Tunnel magnetoresistance effect in magnetic tunnel junctions with (110)-oriented epitaxial Co2FeAl0.6Si0.5 Heusler electrodes (2011)
  • Author(s): N.Tezuka, L.Jiang, S.Sugimoto
  • Organizer: The 56th Magnetism and Magnetic Materials Conference
  • Place of Presentation: Scottsdale, USA
  • Year and Date: 2011-11-02
• [Presentation] New materials research for high spin polarized current (2011)
  • Author(s): N.Tezuka, T.Saito, M.Yoshida, L.Jiang, G.Zhou, S.Sugimoto
  • Organizer: Moscow International Symposium on Magnetism 2011
  • Place of Presentation: Moscow, Russia(Invited)
  • Year and Date: 2011-08-25
• [Presentation] New Materials Research for High Spin Polarization (2011)
  • Author(s): N. Tezuka
  • Organizer: [Invited], Moscow International Symposium on Magnetism 2011, Moscow State University
  • Place of Presentation: Moscow, Russia
  • Year and Date: 2011-08-22
• [Presentation] Spin-based MOSFET and Its Applications (2011)
  • Author(s): Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto
  • Organizer: [Invited], Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor III (ULSI vs. TFT 3)
  • Place of Presentation: Hong Kong, China
  • Year and Date: 2011-07-01
• [Presentation] Spin-based MOSFET and Its Applications (2011)
  • Author(s): Y.Saito, T.Inokuchi, M.Ishikawa, H.Sugiyama, T.Marukame, T.Tanamoto
  • Organizer: Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor III (ULSI vs.TFT 3)
  • Place of Presentation: Hong Kong, China(Invited)
  • Year and Date: 2011-07-01
• [Presentation] Spin-based MOSFET: a promising candidate for beyond CMOS device using nanotechnology (2011)
  • Author(s): Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto
  • Organizer: [Invited], The Seventh International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: The College of Nanoscale Science and Engineering (CNSE), Albany, New York, USA
  • Year and Date: 2011-05-15
• [Presentation] Spin-based MOSFET : a promising candidate for beyond CMOS device using nanotechnology (2011)
  • Author(s): Y.Saito, T.Inokuchi, M.Ishikawa, H.Sugiyama, T.Tanamoto
  • Organizer: The Seventh International Nanotechnology Conference on Communication and Cooperation (INC7)
  • Place of Presentation: New York, USA(Invited)
  • Year and Date: 2011-05-15
• [Presentation] Electrical transport properties of highly ordered Co2FeAl0.5Si0.6/GaAs heterostructures with molecular beam epitaxy (2011)
  • Author(s): T.Saito, N.Tezuka, S.Sugimoto
  • Organizer: INTERMAG 2011
  • Place of Presentation: Taipei, Tiwan
  • Year and Date: 2011-04-27
• [Presentation] MBEによりSi基板上に成膜されたCo_2FeAl_<0.5>Si_<0.5>薄膜の結晶構造と磁気特性 (2010)
  • Author(s): 斎藤達哉、加納顕、手束展規、杉本諭
  • Organizer: 日本金属学会
  • Place of Presentation: 北海道大学
  • Year and Date: 2010-09-26
• [Presentation] Read/Write operation of spin-based MOSFET and the related phenomena (2010)
  • Author(s): Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama
  • Organizer: [Invited], The 6th International ConfereSnce on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)
  • Place of Presentation: University of Tokyo, Japan
• [Presentation] スピンMOSFETの取り組み現状と最新動向 (2010)
  • Author(s): 斉藤 好昭
  • Organizer: 未踏・ナノデバイステクノロジー第151委員会とシリコン超集積化システム第165委員会の合同研究会
  • Place of Presentation: 京都、日本
• [Presentation] Spin injection, Transport, and Read/Write operation in spin-based MOSFET (2010)
  • Author(s): Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto
  • Organizer: [Invited], International Conference of Asian Union of Magnetics Societies (AUMS)
  • Place of Presentation: Jeju island, Korea
• [Presentation] Read/Write operation of spin-based MOSFET and the related phenomena (2010)
  • Author(s): Y.Saito, T.Marukame, M.Ishikawa, T.Inokuchi, H.Sugiyama
  • Organizer: The 6^<th> International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)
  • Place of Presentation: University of Tokyo, Japan
• [Presentation] Spin injection, Transport, and Read/Write operation in spin-based MOSFET (2010)
  • Author(s): Y.Saito, T.Marukame, M.Ishikawa, T.Inokuchi, H.Sugiyama, T.Tanamoto
  • Organizer: International Conference of Asian Union of Magnetics Societies (AUMS)
  • Place of Presentation: Jeju island, Korea
• [Patent(Industrial Property Rights)] 高速スピンMOSFET (2012)
  • Inventor(s): 斉藤好昭,杉山英行,井口智明,石川瑞
  • Industrial Property Rights Holder: 株式会社 東芝
  • Filing Date: 2012-10-29
  • Overseas
• [Patent(Industrial Property Rights)] 高速スピンMOSFET (2012)
  • Inventor(s): 斉藤好昭，杉山英行，井口智明，石川瑞
  • Industrial Property Rights Holder: 斉藤好昭，杉山英行，井口智明，石川瑞
  • Industrial Property Rights Type: 特許
  • Filing Date: 2012-10-29
  • Overseas