| Budget Amount *help |
¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2010: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Research Abstract |
An attempt was made to create a waveguide silicon(Si)-LED and aSi-optical-amplifier operable at cryogenic temperature by making most of the uniqueelectronic properties of quantum wire-like {311}-rod-defects developing in crystalline Sithat help break the inherent indirect bottleneck. To create Si-based active photonic devicesbased on such “tamable defects”, we have demonstrated (1) on-demand position-selectivecreation of defects, (2) silicon-optical-amplifier under current injection, (3) identificationand utilization of a new gain-boosting localized electronic system, and (4) a waveguide-LEDwith a 30-MHz modulation bandwidth operated at room temperature.
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