| Project/Area Number |
22360005
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ONABE Kentaro 東京大学, 大学院・新領域創成科学研究科, 教授 (50204227)
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| Co-Investigator(Renkei-kenkyūsha) |
YAGUCHI Hiroyuki 埼玉大学, 大学院・理工学研究科, 教授 (50239737)
KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115)
KUBOYA Shigeyuki 東京大学, 大学院・新領域創成科学研究科, 助教 (70583615)
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| Research Collaborator |
SAKUNTAM Sanorpim チュラロンコン大学(タイ), 理学部, 助教授
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2010: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Keywords | エピタキシャル成長 / 立方晶窒化物半導体 / 立方晶III-N半導体 / 窒化物半導体 / III-N半導体 / MOVPE / MBE / 半導体物性 / 結晶成長 / 立方晶III族窒化物 / III族窒化物半導体 |
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| Research Abstract |
High cubic phase purity films and their hetero-structures of III-nitride semiconductors including GaN, InN, AlN and related alloys have been realized using metalorganic vapor phase epitaxy or molecular beam epitaxy. Their basic physical properties such as phase purity, defect nature, luminescence and electrical conduction have been clarified in relation with the growth conditions. In particular, the usefulness of YSZ(001) substrates for cubic InN and InGaN films, conductivity control by Si doping to cubic GaN and AlGaN films, and the bandgap value for cubic AlN are established.
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