| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2012: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2011: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2010: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
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| Research Abstract |
In order for the materials design toward new functions, we proposed simultaneous application of “band gap engineering” and “function engineering” for corundum-structured oxide materials based on α-Ga_2O_3. The former establishes the basic device structure and the latter contributes the materials functionalization. New interaction phenomena were observed by the alloying, leading to new multifunctional materials, such as ferromagnetic semiconductors with Curie temperature above room temperature, which are effective for next generation devices with novel physics.
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