Research on step-free heterostructures of nitride semiconductors

• Project/Area Number: 22360013
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: NTT Basic Research Laboratories
• Principal Investigator: AKASAKA Tetsuya 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (90393735)
• Co-Investigator(Kenkyū-buntansha): GOTOH Hideki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795) ; KOBAYASHI Yasuyuki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (90393727) ; KASU Makoto 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (50393731)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000); Fiscal Year 2012: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2011: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000); Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
• Keywords: エピタキシャル成長 / 半導体物性 / 量子井戸 / 結晶成長 / 窒化物半導体 / ステップフリー / 無転位 / 光物性 / 表面・界面物性 / 超格子

Research Abstract

We have successfully fabricated step-free InN quantum wells (QWs) using our original growth technique in which completely flat surfaces without any monolayer steps of nitride semiconductors can be formed with the diameters larger than 16 micrometers. The step-free InN QWs are one monolayer thick and emit extremely sharp violet photoluminescence. High-efficiency green and red emissions will be theoretically obtained by controlling the thickness of step-free InN QWs.

Research Products

• [Journal Article] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2013)
  • Author(s): C. H. Lin、T. Akasaka、H. Yamamoto
  • Journal Title: Applied Physics Express Volume: Vol. 6 Pages: 35503-35503
  • NAID: 10031159850
  • Peer Reviewed
• [Journal Article] Nucleus and Spiral Growth of N-face GaN(000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2013)
  • Author(s): C. H. Lin, T. Akasaka, and H. Yamamoto
  • Journal Title: Applied Physics Express Volume: 6 Issue: 3 Pages: 35503-35503
  • DOI: 10.7567/apex.6.035503
  • NAID: 10031159850
  • Peer Reviewed
• [Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface、Advanced. (2012)
  • Author(s): T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
  • Journal Title: Materials Volume: Vol. 24 Pages: 4296-4300
  • Peer Reviewed
• [Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface (2012)
  • Author(s): T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
  • Journal Title: Advanced Materials Volume: 24 Issue: 31 Pages: 4296-4300
  • DOI: 10.1002/adma.201200871
  • Peer Reviewed
• [Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成 (2011)
  • Author(s): 赤坂哲也、小林康之赤坂哲也、小林康之、嘉数誠
  • Journal Title: 日本結晶成長学会論文誌 Volume: Vol. 38 Pages: 221-226
  • Peer Reviewed
• [Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成 (2011)
  • Author(s): 赤坂哲也, 小林康之, 嘉数誠
  • Journal Title: 日本結晶成長学会誌 Volume: Vol.38 No.4 Pages: 221-226
  • Peer Reviewed
• [Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Journal Title: Applied Physics Express Volume: Vol. 3 Pages: 75602-75602
  • NAID: 10026495564
  • Peer Reviewed
• [Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy (2010)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Journal Title: Applied Physics Letters Volume: Vol. 97 Pages: 141902-141902
  • Peer Reviewed
• [Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
  • Journal Title: Applied Physics Express Volume: 3
  • NAID: 10026495564
  • Peer Reviewed
• [Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy (2010)
  • Author(s): Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Presentation] 螺旋成長したN 極性GaN (000-1)のらせん転位近傍のTEM 観察 (2013)
  • Author(s): 林家弘、赤坂哲也、山本秀樹
  • Organizer: 春季 第60回 応用物理学会春季学術講演会
  • Place of Presentation: 厚木(27p-G21-16)
  • Year and Date: 2013-03-27
• [Presentation] InGaN 下地層による(000-1)InGaN 多層量子井戸発光効率の改善 (2013)
  • Author(s): 林家弘、赤坂哲也、山本秀樹
  • Organizer: 春季 第60回 応用物理学会春季学術講演会
  • Place of Presentation: 厚木(27p-G21-17)
  • Year and Date: 2013-03-27
• [Presentation] 螺旋成長したN極性GaN (000-1)のらせん転位近傍のTEM観察 (2013)
  • Author(s): 林 家弘，赤坂哲也，山本秀樹
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川 神奈川工科大学
• [Presentation] InGaN下地層による(000-1)InGaN多層量子井戸発光効率の改善 (2013)
  • Author(s): 林 家弘，赤坂哲也，山本秀樹
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川 神奈川工科大学
• [Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate (2012)
  • Author(s): T. Akasaka、Y. Kobayashi、C.-H. Lin、H. Yamamoto
  • Organizer: Intensive Discussion on Growth of Nitride Semiconductors
  • Place of Presentation: 仙台(招待講演)
  • Year and Date: 2012-10-23
• [Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface (2012)
  • Author(s): T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: 札幌(招待講演)
  • Year and Date: 2012-10-17
• [Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2012)
  • Author(s): C. H. Lin、T. Akasaka、H. Yamamoto
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: 札幌
  • Year and Date: 2012-10-16
• [Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface (2012)
  • Author(s): T. Akasaka、A. Berry、Y. Kobayashi、H. Yamamoto
  • Organizer: 2012 International Conference on Solid State Devices and Materials (SSDM2012)
  • Place of Presentation: 京都
  • Year and Date: 2012-09-25
• [Presentation] Step-free 界面を有するInN/GaN 単一量子井戸からの紫色狭線発光 (2012)
  • Author(s): 赤坂哲也、後藤秀樹、小林康之、山本秀樹
  • Organizer: 秋季第73回 応用物理学会学術講演会
  • Place of Presentation: 松山(13a-H9-9)
  • Year and Date: 2012-09-13
• [Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2012)
  • Author(s): 林家弘、赤坂哲也、山本秀樹
  • Organizer: 秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 松山(12p-H9-5)
  • Year and Date: 2012-09-12
• [Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface (2012)
  • Author(s): T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo, Japan
  • Invited
• [Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate (2012)
  • Author(s): T. Akasaka, Y. Kobayashi, C. H. Lin, and H. Yamamoto
  • Organizer: Intensive Discussion on Growth of Nitride Semiconductors
  • Place of Presentation: Sendai, Japan
  • Invited
• [Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface (2012)
  • Author(s): T. Akasaka, A. Berry, Y. Kobayashi, and H. Yamamoto
  • Organizer: 2012 International Conference on Solid State Devices and Materials (SSDM2012)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2012)
  • Author(s): C. H. Lin, T. Akasaka, and H. Yamamoto
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Step-free界面を有するInN/GaN単一量子井戸からの紫色狭線発光 (2012)
  • Author(s): 赤坂哲也，後藤秀樹，小林康之，山本秀樹
  • Organizer: 第73回応用物理学会秋季学術講演会
  • Place of Presentation: 愛媛 松山大学
• [Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy (2012)
  • Author(s): 林 家弘，赤坂哲也，山本秀樹
  • Organizer: 第73回応用物理学会秋季学術講演会
  • Place of Presentation: 愛媛 松山大学
• [Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE (2011)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE (2011)
  • Author(s): T.Akasaka, Y.Kobayashi, M.Kasu
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  • Place of Presentation: ウインクあいち(名古屋市)
  • Year and Date: 2011-09-28
• [Presentation] MOVPE 選択成長によるGaN ステップフリー面上へのInN核生成 (2011)
  • Author(s): 赤坂哲也、小林康之
  • Organizer: 2011 年秋季 第72回 応用物理学会学術講演会
  • Place of Presentation: 山形(31p-ZE-15)
  • Year and Date: 2011-08-31
• [Presentation] MOVPE選択成長によるGaNステップフリー面上へのInN核生成 (2011)
  • Author(s): 赤坂哲也, 小林康之
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形市)
  • Year and Date: 2011-08-31
• [Presentation] Formation of step-free GaN surface at low temperature of 770 oC by controlling surface supersaturation (2011)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Organizer: 9th International Conference on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: グラスゴー(英国)
  • Year and Date: 2011-07-15
• [Presentation] Formation of step-free GaN surface at low temperature of 770C by controlling surface supersaturation (2011)
  • Author(s): T.Akasaka, Y.Kobayashi, M.Kasu
  • Organizer: 9th International Conference on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: SECCカンファレンスセンター,(グラスゴー,UK)
  • Year and Date: 2011-07-15
• [Presentation] 表面過飽和度制御によるGaN ステップフリー面の形成 (2011)
  • Author(s): 赤坂哲也、小林康之、嘉数誠
  • Organizer: 第3回 窒化物半導体結晶成長講演会
  • Place of Presentation: 福岡(招待講演IN3)
  • Year and Date: 2011-06-18
• [Presentation] 表面過飽和度制御によるGaNステップフリー面の形成 (2011)
  • Author(s): 赤坂哲也, 小林康之, 嘉数誠
  • Organizer: 第3回窒化物半導体結晶成長講演会
  • Place of Presentation: 九州大学筑紫キャンパス(春日市)(招待講演)
  • Year and Date: 2011-06-18
• [Presentation] GaN のMOVPE成長における表面過飽和度に及ぼすキャリアガスの影響 (2011)
  • Author(s): 赤坂哲也、小林康之、嘉数誠
  • Organizer: 春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木(26a-BY-5)
  • Year and Date: 2011-03-26
• [Presentation] 窒化ガリウムのステップフリー面の作製と成長機構 (2010)
  • Author(s): 赤坂哲也、小林康之、嘉数誠
  • Organizer: 真空・表面科学合同講演会
  • Place of Presentation: 大阪(4Ca-06)
  • Year and Date: 2010-11-04
• [Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Organizer: 2010 International Conference on Solid State Devices and Materials (SSDM2010)
  • Place of Presentation: 東京
  • Year and Date: 2010-09-24
• [Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): Tetsuya Akasaka, Yasuyuki Kobayashi Makoto Kasu
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京大学(東京都)
  • Year and Date: 2010-09-24
• [Presentation] MOVPE におけるGaN スパイラルおよび核成長速度の基板温度依存性評価 (2010)
  • Author(s): 赤坂哲也、小林康之、嘉数誠
  • Organizer: 秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎(15p-C-6)
  • Year and Date: 2010-09-15
• [Presentation] MOVPEにおけるGaNスパイラルおよび核成長速度の基板温度依存性評価 (2010)
  • Author(s): 赤坂哲也, 小林康之, 嘉数誠
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-15
• [Presentation] Step-free GaN hexagons grown by selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): T. Akasaka、Y. Kobayashi、M. Kasu
  • Organizer: 3rd International Symposium on Growth of III-nitrides (ISGN-3)
  • Place of Presentation: モンペリエ(フランス)(招待講演)
  • Year and Date: 2010-07-06
• [Presentation] Step-free GaN hexagons grown by selective-area metalorganic vaporphase epitaxy(Invited) (2010)
  • Author(s): Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
  • Organizer: 3rd International Symposium on Growth of III-nitrides
  • Place of Presentation: コラム(モンペリエ,フランス)
  • Year and Date: 2010-07-06
• [Remarks] NTT 物性科学基礎研究所研究成果
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• [Remarks] NTT物性科学基礎研究所研究成果
  • URL: http://www.brl.ntt.co.jp/J/result.html
• [Remarks]
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• [Remarks]
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