Research on step-free heterostructures of nitride semiconductors
| Project/Area Number |
22360013
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
AKASAKA Tetsuya 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (90393735)
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| Co-Investigator(Kenkyū-buntansha) |
GOTOH Hideki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795)
KOBAYASHI Yasuyuki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (90393727)
KASU Makoto 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (50393731)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2012: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2011: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
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| Keywords | エピタキシャル成長 / 半導体物性 / 量子井戸 / 結晶成長 / 窒化物半導体 / ステップフリー / 無転位 / 光物性 / 表面・界面物性 / 超格子 |
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| Research Abstract |
We have successfully fabricated step-free InN quantum wells (QWs) using our original growth technique in which completely flat surfaces without any monolayer steps of nitride semiconductors can be formed with the diameters larger than 16 micrometers. The step-free InN QWs are one monolayer thick and emit extremely sharp violet photoluminescence. High-efficiency green and red emissions will be theoretically obtained by controlling the thickness of step-free InN QWs.
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Report
(4 results)
Research Products
(46 results)
