| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2014: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2010: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Outline of Final Research Achievements |
Nano-scale electronic devices demand technologies which control fine structures at atomic level. At the same time, In order to clarify origins of various kinds of faults or develop their suppression technologies, it is important to more precisely understand the phenomena using well-defined atomically-controlled structures.
In this study, the well-defined structures with the atomic steps and atomically-flat terraces were formed by immersing the (111)-oriented, Si mono-crystal wafers in the ultralow-dissolved oxygen water. Controllability of the atomic step lines was studied as a kind of nanotechnology. In addition, correlating to reliability, two-dimensional distribution of the thermally grown SiO2 film thickness was investigated using the atomic terraces with ultimate flatness.
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