| Project/Area Number |
22360056
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | The University of Tokyo |
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Principal Investigator |
DELAUNAY J-J 東京大学, 大学院・工学系研究科, 准教授 (80376516)
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| Co-Investigator(Kenkyū-buntansha) |
小出 康夫 独立行政法人物質・材料研究機構, センサ材料センター/ナノテクノロジー融合支援センター (70195650)
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| Co-Investigator(Renkei-kenkyūsha) |
廖 梅勇 独立行政法人物質・材料研究機構, センサ材料センター/ナノテクノロジー融合支援センター, 研究員 (70528950)
福谷 克之 東京大学, 生産技術研究所, 教授 (10228900)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2010: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
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| Keywords | ナノ・マイクロ加工 / 自己組織化 / 半導体ナノワイヤー |
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| Research Abstract |
A self-assembly and single-step fabrication technique of bridged nanowire photodetectors is proposed and demonstrated. A deep ultra-violet photodetector made of -Ga2O3 material is fabricated and characterized. The bridged nanowire photodetector is made of thick-nanowire electrode layers and suspended nanowires bridging the gap between the electrode layers. The electrodes and the bridged nanowires are grown with the same material in a single-step chemical vapor deposition process. The bridged nanowires make the sensitive part of the photoresistors. The selective growth of the electrode layers is obtained by patterning gold, a catalyst for the material to be grown, through a low-cost physical mask. The physical mask forms a pattern of two electrodes separated by a gap of 100 microns. Growth conditions of the chemical vapor process are optimized to form ultra-long nanowires (> 100 microns), so that some of the nanowires bridge the electrodes and, thus, form the sensitive part of thetodetector. The advantages of the reported technique are three-fold: the fabrication technique is efficient and cost-effective, the nanowire surfaces are free of contamination, and the nanowire properties are not affected by the substrate. The technique was applied to the large band-gap -Ga2O3 material to realize selectivity to deep ultra-violet detection (solar-blind). A photodetector having good spectral selectivity, fast response, low noise and low cross sensitivity was successfully fabricated.
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