| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2010: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
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| Research Abstract |
The possibility of silicon power device loss reduction by 50% is demonstrated in theory and experiment. In the research, PiN diodes, which have been used in variety of applications, are particularly considered for loss reduction with new carrier injection method. The new method with pulsed injection shows reduction of forward voltage drop down to 0.4V which is about a half of the conventional PiN diodes. In the research IGBT loss reduction method is also demonstrated.
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