Innovative Low Loss Semiconductor Rectifier with Pulsed Carrier Injection Mechanism
| Project/Area Number |
22360118
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Power engineering/Power conversion/Electric machinery
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
OMURA Ichiro 九州工業大学, 工学研究院, 教授 (10510670)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2010: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
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| Keywords | パワーエレクトロニクス / パワー半導体 / 電力用ダイオード / 電子デバイス・機器 / 省エネルギー / 二酸化炭素排出削減 |
|---|
| Research Abstract |
The possibility of silicon power device loss reduction by 50% is demonstrated in theory and experiment. In the research, PiN diodes, which have been used in variety of applications, are particularly considered for loss reduction with new carrier injection method. The new method with pulsed injection shows reduction of forward voltage drop down to 0.4V which is about a half of the conventional PiN diodes. In the research IGBT loss reduction method is also demonstrated.
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Report
(4 results)
Research Products
(30 results)
