Atomically-control of halfmetal/Si interface for spin-transistors
| Project/Area Number |
22360127
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授研究者番号 (20274491)
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2010: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
|
|---|
| Keywords | 半導体 / Si 系スピントランジスタ / 次世代 LSI / 電子デバイス・機器 / 集積回路 / スピントランジスタ / 強磁性体 / エピタキシャル成長 |
|---|
| Research Abstract |
To achieve Si-based spin-transistors, a new epitaxial growth technique of half-metal on Si has been developed. Moreover, by optimizing the electrical transport properties at half-metal/Si interfaces, injection of spin-polarized electrons has been realized at room temperature.
|
Report
(4 results)
Research Products
(18 results)
