Atomically-control of halfmetal/Si interface for spin-transistors

• Project/Area Number: 22360127
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
• Co-Investigator(Kenkyū-buntansha): SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授研究者番号 (20274491)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2011: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2010: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
• Keywords: 半導体 / Si 系スピントランジスタ / 次世代 LSI / 電子デバイス・機器 / 集積回路 / スピントランジスタ / 強磁性体 / エピタキシャル成長

Research Abstract

To achieve Si-based spin-transistors, a new epitaxial growth technique of half-metal on Si has been developed. Moreover, by optimizing the electrical transport properties at half-metal/Si interfaces, injection of spin-polarized electrons has been realized at room temperature.

Research Products

• [Journal Article] (Invited) Hybrid- Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- (2013)
  • Author(s): M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
  • Journal Title: ECS Transactions Volume: Vol.50 Issue: 5 Pages: 59-70
  • DOI: 10.1149/05005.0059ecst
  • Peer Reviewed
• [Journal Article] Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111) (2012)
  • Author(s): S. Oki, S. Yamada, T. Murakami, M. Miyao, K. Hamaya
  • Journal Title: Thin Solid Films Volume: Vol.520 Pages: 3419-3422
  • URL: http://dx.doi.org/10.1016/j.tsf.2011.10.080
  • Peer Reviewed
• [Journal Article] Temperature evolution of spin accumulation detected electrically in a nodegenerated silicon channel (2012)
  • Author(s): Y.Ando, K.Kasahara, S.Yamada, Y.Maeda, K.Masaki, Y.Hoshi, K.Sawano, M.Miyao, K.Hamaya
  • Journal Title: Phys.Rev.B Volume: 85 Issue: 3 Pages: 35320-35320
  • DOI: 10.1103/physrevb.85.035320
  • Peer Reviewed
• [Journal Article] Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111) (2012)
  • Author(s): S.Oki, et al
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3419-3422
  • Peer Reviewed
• [Journal Article] Source-Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications (2011)
  • Author(s): K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao
  • Journal Title: Japanese Journal of Applied Physics Volume: Vol.50 Issue: 1R Pages: 010101-010101
  • DOI: 10.1143/jjap.50.010101
  • NAID: 210000138174
  • Peer Reviewed
• [Journal Article] Low-temperature grown quaternary Heusler-compound Co2Mn1-xFexSi films on Ge(111) (2011)
  • Author(s): S. Yamada, K. Hamaya, T. Murakami, Varaprasad, Y. K. Takahashi, A. Rajanikanth, K. Hono, and M. Miyao
  • Journal Title: Journal of Applied Physics Volume: Vol.109
  • URL: http://dx.doi.org/10.1063/1.3563039
  • Peer Reviewed
• [Journal Article] Low-temperature grown quaternary Heusler compound Co_2Mn_<1-x>Fe_xSi films on Ge(111) (2011)
  • Author(s): S.Yamada, et al
  • Journal Title: Journal of Applied Physics Volume: 109
  • Peer Reviewed
• [Journal Article] Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces (2010)
  • Author(s): K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao
  • Journal Title: Applied Physics Letters Volume: Vol.96
  • URL: http://dx.doi.org/10.1063/1.336870
  • Peer Reviewed
• [Journal Article] Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces (2010)
  • Author(s): K.Yamane, et al.
  • Journal Title: Applied Physics Express Volume: 96
  • Peer Reviewed
• [Journal Article] Source-Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications (2010)
  • Author(s): K.Hamaya, et al.
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
• [Presentation] Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator (2013)
  • Author(s): T. Sadoh
  • Organizer: 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
  • Place of Presentation: Sendai
  • Invited
• [Presentation] HEPESによるFe3Si/Geヘテロ構造の評価 (2013)
  • Author(s): 松本宏哉
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
• [Presentation] Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- (2012)
  • Author(s): M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
  • Organizer: PRiME 2012, ECS Pacific RIM Meeting 2012
  • Place of Presentation: awaii, U.S.A
• [Presentation] Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- (2012)
  • Author(s): M. Miyao
  • Organizer: PRiME 2012, ECS Pacific RIM Meeting
  • Place of Presentation: Hawaii
  • Invited
• [Presentation] Novel Growth-technique s of SiGe-based Hetero-structures for Post-scaling Devices (2011)
  • Author(s): M.Miyao, et al
  • Organizer: ICSI-7
  • Place of Presentation: Leuven, Belgium(招待講演)
  • Year and Date: 2011-08-28
• [Presentation] Electrical Spin Injection and Detection in Si using Ferromagnetic-Silicide Contacts (2010)
  • Author(s): K.Hamaya, et al.
  • Organizer: APAC-SILICIDE 2010
  • Place of Presentation: つくば
  • Year and Date: 2010-07-24
• [Presentation] Electrical Spin Injection and Detection in Si using Ferromagnetic-Silicide Contacts (2010)
  • Author(s): K. Hamaya and M. Miyao
  • Organizer: APAC-SILICIDE 2010
  • Place of Presentation: Tsukuba
• [Presentation] Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices (2010)
  • Author(s): M. Miyao, T. Sadoh, and K. Hamaya
  • Organizer: ICSI7 2011
  • Place of Presentation: Leuven, Belgium