| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2011: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
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| Research Abstract |
In order to fabricate III-V channel MOSFET or GaN-based LED on Si substrates, low-angle incidence microchannel epitaxy (LAIMCE) was investigated. LAIMCE is useful to greatly reduce dislocations in the laterally grown areas using molecular beam epitaxy. A lateral growth of a-plane GaN more than 4um-wide was successfully grown by metal-organic molecular beam epitaxy using LAIMCE. No dislocation or defect was observed in the laterally grown area by TEM though a large number of dislocations, as large as 10 to the 10th power per square cm, exists in the GaN template substrate. Mask materials for selective growth or other important fundamental technologies for LAIMCE were also investigated.
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