Realization of Long-wavelength Laser Transistor for New GenerationPhotonic Networks

• Project/Area Number: 22360138
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: NISHIYAMA Nobuhiko 東京工業大学, 大学院・理工学研究科, 准教授 (80447531)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2011: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2010: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
• Keywords: 光デバイス / 光回路 / 半導体レーザ / InP / レーザトランジスタ / フォトニックネットワーク / 高性能レーザ

Research Abstract

Theoretical analysis and fabrication of a transistor laser (TL) using AlGaInAs quantum wells and a buried-hetero (BH) structure have been studied. First, the fabrication technology of the BH structure for AlGaInAs was studied and state-of-the-art AlGaInAs/InP-BH LDs were demonstrated. This technology enabled CW lasing operation of AlGaInAs TLs for the first time with the threshold emitter current of 38 mA. This TL showed output power control by base-collector voltage change.

Research Products

• [Journal Article] Theoretical analysis of the damping effect on a transistor laser (2012)
  • Author(s): M. Shirao
  • Journal Title: IEICE Electronics Express Volume: 9 Issue: 23 Pages: 1792-1798
  • DOI: 10.1587/elex.9.1792
  • NAID: 130002542191
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning (2012)
  • Author(s): Y. Takino
  • Journal Title: IEEE J. Quantum Electron. Volume: Vol. 48 Issue: 8 Pages: 971-979
  • DOI: 10.1109/jqe.2012.2196410
  • Peer Reviewed
• [Journal Article] Athermal Wavelength Filters toward Optical Interconnection to LSIs (2012)
  • Author(s): Y.Atsumi, M.Oda, J.H.Kang, N.Nishiyama, S.Arai
  • Journal Title: IEICE Transactions on Electronics Volume: E95-C Issue: 2 Pages: 229-236
  • DOI: 10.1587/transele.E95.C.229
  • NAID: 10030609915
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Journal Article] Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells (2011)
  • Author(s): M.Shirao, T.Sato, Y.Takino, N.Sato, N.Nishiyama, S.Arai
  • Journal Title: Appl.Phys.Express Volume: Vol.4 Issue: 4 Pages: 3975-3982
  • DOI: 10.1364/oe.20.003983
  • NAID: 10029239379
  • Peer Reviewed
• [Journal Article] Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers (2011)
  • Author(s): 瀧野祐太
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 7R Pages: 070203-070203
  • DOI: 10.1143/jjap.50.070203
  • Peer Reviewed
• [Journal Article] Large-Signal Analysis of a Transistor Laser (2011)
  • Author(s): M. Shirao, S. Lee, N. Nishiyama, S. Arai
  • Journal Title: IEEE J. Quantum Electron Volume: Vol.47 Issue: 3 Pages: 359-367
  • DOI: 10.1109/jqe.2010.2090341
  • Peer Reviewed
• [Journal Article] Magnetic Interactions at Optical Frequencies in an InP-Based Wavegui de Device with Metamaterial (2011)
  • Author(s): T.Amemiya, T.Shindo, D.Takahashi, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Quantum Electronics Volume: 47 Issue: 5 Pages: 736-744
  • DOI: 10.1109/jqe.2011.2108268
  • Peer Reviewed
• [Journal Article] Nonunity permeability in metamaterial-based GaInAsP/InP multimode interferometers (2011)
  • Author(s): T.Amemiya, T.Shindo, D.Takahashi, S.Myoga, N.Nishiyama, S.Arai
  • Journal Title: Optics Lett. Volume: 36 Issue: 12 Pages: 2327-2329
  • DOI: 10.1364/ol.36.002327
  • Peer Reviewed
• [Journal Article] Low-power-consumption High-eye-margin 10 Gbit/s Operation by GaInAsP/InP Distributed Reflector Lasers with Wirelike Active Regions (2011)
  • Author(s): S.Lee, D.Takahashi, T.Shindo, K.Shinno, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: IEEE Photonics Technol.Lett. Volume: 23 Issue: 18 Pages: 1349-1351
  • DOI: 10.1109/lpt.2011.2160938
  • Peer Reviewed
• [Journal Article] Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding (2011)
  • Author(s): R.Osabe, T.Okumura, S.Kondo, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys Volume: Vol.50 Issue: 8R Pages: 88005-88005
  • DOI: 10.1143/jjap.50.088005
  • NAID: 210000139428
  • Peer Reviewed
• [Journal Article] Lateral-Current-Injection Distributed Feedback Laser with Surface Grating Structure (2011)
  • Author(s): T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T Amemiya, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Sel.Top.Quantum Electron. Volume: 17 Issue: 5 Pages: 1175-1182
  • DOI: 10.1109/jstqe.2011.2131636
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Membrane Lasers for Optical Interconnects (2011)
  • Author(s): S.Arai, N.Nishiyama, T.Maruyama, T.Okumura
  • Journal Title: IEEE J.Sel.Top.Quantum Electron. Volume: Vol.17(Invited) Issue: 5 Pages: 1381-1389
  • DOI: 10.1109/jstqe.2011.2128859
  • Peer Reviewed
• [Journal Article] Low-loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate (2011)
  • Author(s): J.H.Kang, Y.Atsumi, M.Oda, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.50 Issue: 12R Pages: 120208-120208
  • DOI: 10.1143/jjap.50.120208
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Lateral-Current-Injection Distributed Feedback Laser with a-Si Surface Grating (2011)
  • Author(s): T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Opt.Express Volume: Vol.19 Pages: 1884-1891
  • Peer Reviewed
• [Journal Article] Lateral Junction Waveguide-type Photodiode Grown on Semi-insulating InP Substrate (2011)
  • Author(s): T.Okumura. D.Kondo, H.Ito, S.H.Lee, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.50
  • NAID: 40018283282
  • Peer Reviewed
• [Journal Article] Large-Signal Analysis of a Transistor Laser (2011)
  • Author(s): M.Shirao, S.Lee, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Quantum Electron Volume: Vol.47 Pages: 359-367
  • Peer Reviewed
• [Journal Article] シリコン/III-V族半導体ハイブリッド集積光デバイス (2011)
  • Author(s): 西山伸彦
  • Journal Title: 月刊OPTRONICS Volume: 2011年2月号 Pages: 117-120
  • Peer Reviewed
• [Journal Article] Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate (2010)
  • Author(s): T.Okumura, H.Ito, D.Kondo, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.49
  • NAID: 40017085031
  • Peer Reviewed
• [Journal Article] Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits (2010)
  • Author(s): Y.Atsumi, K.Inoue, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.49
  • NAID: 40017116072
  • Peer Reviewed
• [Journal Article] Bandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions (2010)
  • Author(s): S.H.Lee, D.Parekh, T.Shindo, W.Yang, P.Guo, D.Takahashi, N.Nishiyama, C.J.Chang-Hasnain, S.Arai
  • Journal Title: Opt.Express Volume: Vol.18 Pages: 16370-16378
  • Peer Reviewed
• [Presentation] Spectral Characteristics Under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser (2013)
  • Author(s): M. Yukinari, N. Sato, N. Nishiyama, and S.Arai
  • Organizer: CLEO-PR&OECC/PS 2013
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2013-07-04
• [Presentation] Spectral Characteristics Under Various Operation Conditions of 1.3-μm npn-AlGaInAs/InP Transistor Laser (2013)
  • Author(s): M. Yukinari
  • Organizer: CLEO-PR&OECC/PS 2013
  • Place of Presentation: 京都国際会議場(京都府）
• [Presentation] Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser (2012)
  • Author(s): N. Sato, M. Shirao, T. Sato, M. Yukinari, N.Nishiyama, T. Amemiya, and S. Arai.
  • Organizer: 23rd IEEE International Semiconductor Laser Conference (ISLC2012)
  • Place of Presentation: San Diego, CA, USA
  • Year and Date: 2012-10-08
• [Presentation] Uniform BCB Bonding Process Toward Low Propagation Loss (2012)
  • Author(s): Y.Maeda
  • Organizer: The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2012-05-24
• [Presentation] Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions (2012)
  • Author(s): T.Shindo
  • Organizer: The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2012-05-24
• [Presentation] 金属側壁層有するInP系プラズモニック導波路の作製評価 (2012)
  • Author(s): 村井英淳
  • Organizer: The 2012 IEICE General conf.
  • Place of Presentation: Okayama
  • Year and Date: 2012-03-23
• [Presentation] 多層アモルファスシリコン細線導波路間の信号伝送用グレーティングカプラ (2012)
  • Author(s): 姜〓〓
  • Organizer: The 2012 IEICE General conf.
  • Place of Presentation: Okayama
  • Year and Date: 2012-03-22
• [Presentation] 温度無依存B埋め込みSiスロットリング共振器を用いたドロップフィルタ (2012)
  • Author(s): 小田学
  • Organizer: The 2012 IEICE General conf.
  • Place of Presentation: Okayama
  • Year and Date: 2012-03-22
• [Presentation] 横方向電流注入型半導体薄膜レーザの直接変調帯域の検討 (2012)
  • Author(s): 進藤隆彦
  • Organizer: The 2012 IEICE General conf.
  • Place of Presentation: Okayama
  • Year and Date: 2012-03-21
• [Presentation] ブロッホ波干渉型低損失連結クロス導波路の作製評価 (2012)
  • Author(s): 渥美裕樹
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-18
• [Presentation] BCB貼り付け法によるSi基板上GaInAsP細線1×2 MMIの作製 (2012)
  • Author(s): 李智恩
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-17
• [Presentation] チップ内光配線に向けた横接合導波路型GaInAsフォトダイオードの10Gb/s動作 (2012)
  • Author(s): 小口貴之
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-17
• [Presentation] 1.3μm帯npn-AlGaInAs/InPトランジスタレーザの室温連続動作 (2012)
  • Author(s): 佐藤孝司
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-16
• [Presentation] GaInAs/InP半導体上メタマテリアルにおける共振波長変化の金属膜厚依存性 (2012)
  • Author(s): 明賀聖慈
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-16
• [Presentation] 横方向電流注入型レーザの内部量子効率向上 (2012)
  • Author(s): 信野圭祐
  • Organizer: The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Tokyo
  • Year and Date: 2012-03-16
• [Presentation] Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser (2012)
  • Author(s): N. Sato
  • Organizer: 23rd IEEE International Semiconductor Laser Conference (ISLC 2012)
  • Place of Presentation: San Diego, CA, USA
• [Presentation] Fabrication process of multi-layered amorphous silicon wire waveguides (2011)
  • Author(s): J.H.Kang
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-12-16
• [Presentation] GaInAsP/Si Hybrid Laser with AlInAs Oxidation Current Confinement Layer by Surface Activated Bonding (2011)
  • Author(s): R.Osabe
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-12-16
• [Presentation] L Wide-gap Athermal Si-Slot Wavelength Filters Embedded with Benzocyclobutene (2011)
  • Author(s): M.Oda
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-25
• [Presentation] Low-loss GaInAsP wire waveguide for optical interconnection (2011)
  • Author(s): J.Lee
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-25
• [Presentation] Low-threshold operation of GaInAsP/InP lateral current injection typemembrane DFB lasers (2011)
  • Author(s): M.Futami
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-25
• [Presentation] Low-loss multiple-stacked amorphous silicon wire waveguide on SOI (2011)
  • Author(s): J.H.Kang
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-25
• [Presentation] Proposal of GaInAsP/SOI hybrid laser with AlInAs-oxide current confinement layer by Surface Activated Bonding (2011)
  • Author(s): R.Osabe
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-25
• [Presentation] Si-based Optical Devices toward On-Chip Interconnection and One-Chip Router-Athermal, Amorphous, and III-V on Si (2011)
  • Author(s): N.Nisiyama
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser with Surface Grating Structure (2011)
  • Author(s): T.Shindo
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] Athermal Wavelength Filters toward Photonic Integrated Circuits (2011)
  • Author(s): Y.Atsumi
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] Design of Multi-functional GaInAsP/Si Hybrid Semiconductor Optical Amplifier (2011)
  • Author(s): K.Fukuda
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] Low-loss Amorphous Silicon Wire Waveguides Multilayer Stacked on SOI (2011)
  • Author(s): J.H.Kang
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] Low-Loss GaInAsP Photonic Wire Waveguide for Optical Interconnection (2011)
  • Author(s): J.Lee
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] Membrane InP-based Lasers and Related Devices for On-chip Interconnects (2011)
  • Author(s): N.Nishiyama
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-31
• [Presentation] Non-unity Permeability in InP-based Mach-Zehnder Interferometer with Metamaterial (2011)
  • Author(s): T.Amemiya
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Carrier Concentration Dependent Resonance Frequency Shift in Metamaterial Loaded Semiconductor (2011)
  • Author(s): S.Myoga
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Lateral Current Injection Laser with Uniformly Distributed Quantum-Well Structure (2011)
  • Author(s): T.Shindo
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Room-Temperature Lasing Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser (2011)
  • Author(s): T. Sato, M. Shirao, Y. Takino, N. Sato, N.Nishiyama, and S. Arai
  • Organizer: 2011IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-12
• [Presentation] Room-Temperature Lasing Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser (2011)
  • Author(s): T.Sato
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-12
• [Presentation] Wide-Gap Athermal Si-Slot Mach-Zhender Interferometer Embedded with Benzocyclobutene (2011)
  • Author(s): Y.Atsumi
  • Organizer: The 8th Int.Conf, on Group IV Photonics
  • Place of Presentation: London, UK
  • Year and Date: 2011-09-16
• [Presentation] メタマテリアルを有するInP系マッハツェンダー導波路における透磁率変化の推定 (2011)
  • Author(s): 雨宮智宏
  • Organizer: The 2011 IEICE Society Conf.
  • Place of Presentation: Sapporo
  • Year and Date: 2011-09-15
• [Presentation] オンチップ光通信に向けたInP/Si貼り付け技術とその光デバイス特性 (2011)
  • Author(s): 雨宮智宏
  • Organizer: The 2011 IEICE Society Conf.
  • Place of Presentation: Sapporo
  • Year and Date: 2011-09-15
• [Presentation] BCB埋め込み温度無依存SiスロットMZI型波長フィルタ信号伝送特性の温度依存性 (2011)
  • Author(s): 小田学
  • Organizer: The 2011 IEICE Society Conf.
  • Place of Presentation: Sapporo(招待講演)
  • Year and Date: 2011-09-15
• [Presentation] オンチップ光配線に向けた光導波路作製 (2011)
  • Author(s): 姜〓〓
  • Organizer: The 2011 IEICE Society Conf.
  • Place of Presentation: Sapporo
  • Year and Date: 2011-09-15
• [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析 (2011)
  • Author(s): 雨宮智宏
  • Organizer: The 2011 IEICE Society Conf.
  • Place of Presentation: Sapporo
  • Year and Date: 2011-09-14
• [Presentation] 幅広ギャップ構造を有する温度無依存BCB埋め込みSiスロット型リング共振器 (2011)
  • Author(s): 渥美裕樹
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-02
• [Presentation] ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ (2011)
  • Author(s): 佐藤憲明
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-01
• [Presentation] 1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作 (2011)
  • Author(s): 佐藤孝司
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-01
• [Presentation] AlInAs酸化狭窄層を有するGaInAsP/InP-Siハイブリッドレーザの構造設計 (2011)
  • Author(s): 長部亮
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-01
• [Presentation] 横方向電流注入型レーザにおける内部量子効率の量子井戸構造依存性 (2011)
  • Author(s): 二見充輝
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-01
• [Presentation] 表面回折格子を有する横方向電流注入型メンブレンDFBレーザ (2011)
  • Author(s): 進藤隆彦
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-09-01
• [Presentation] Numerical Analysis of Optical Gain of a3-terminal HBT-SOA (2011)
  • Author(s): M. Shirao, N. Nishiyama, and S. Arai
  • Organizer: IQEC/CLEO PacificRim 2011
  • Place of Presentation: Sydney, Australia
  • Year and Date: 2011-08-31
• [Presentation] Numerical Analysis of Optical Gain of a 3-terminal HBT-SOA (2011)
  • Author(s): M.Shirao
  • Organizer: IQEC/CLEO Pacific Rim 2011
  • Place of Presentation: Sydney, Australia
  • Year and Date: 2011-08-31
• [Presentation] 半導体装荷型メタマテリアルにおけるキャリア濃度に依存した共振周波数変化 (2011)
  • Author(s): 明賀聖慈
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Yamagata
  • Year and Date: 2011-08-31
• [Presentation] BCB貼付を用いたSi基板上低損失GaInAsP細線導波路の実現 (2011)
  • Author(s): 李智恩
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-08-31
• [Presentation] Si導波路幅の制御によるGaInAsP/SiハイブリッドSOA多機能集積のための設計 (2011)
  • Author(s): 福田渓太
  • Organizer: The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
  • Place of Presentation: Yamagata
  • Year and Date: 2011-08-31
• [Presentation] Semiconductor DFB Laser with Plasmonic Metal Layers for Subwavelength Confinement of Light (2011)
  • Author(s): T.Amemiya
  • Organizer: IQEC/CLEO Pacific Rim 2011
  • Place of Presentation: Sydney, Australia
  • Year and Date: 2011-08-28
• [Presentation] Stripe Width Dependence of Internal Quantum Efficiency and Carrier Injection Delay in Lateral Current Injection GaInAsP/InP Lasers (2011)
  • Author(s): M.Futami
  • Organizer: The 16th Opto-Electronics and Communication Conference (OECC2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-07
• [Presentation] Lasing Operation of Lateral-Current-Injection Membrane DFB Laser with Surface Grating (2011)
  • Author(s): T.Shindo
  • Organizer: The 16th Opto-Electronics and Communication Conference (OECC2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-06
• [Presentation] Wide Bandwidth (>25Gbit/s) Modulation of Low Power Consumption Distributed Reflector Lasers with Wire-like Active Region (2011)
  • Author(s): N.Nishiyama
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-06-30
• [Presentation] Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region (2011)
  • Author(s): M. Shirao, T. Sato, N. Sato, N. Nishiyama, and S. Arai
  • Organizer: The 23rd Int. Conf. Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions (2011)
  • Author(s): D.Takahashi
  • Organizer: The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region (2011)
  • Author(s): M.Shirao
  • Organizer: The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2011)
  • Author(s): N. Sato, Y. Takino, M. Shirao, N. Nishiyama, and S. Arai
  • Organizer: The 38th Int. Symposium on Compound Semiconductors (ISCS2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-23
• [Presentation] Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2011)
  • Author(s): N.Sato
  • Organizer: The 38th Int.Symposium on Compound Semiconductors (ISCS2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-23
• [Presentation] 3端子を有するヘテロ接合バイポーラトランジスタ型SOAの数値解析 (2011)
  • Author(s): 白尾瑞基
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] III-V化合物半導体のキャリアを用いたメタマテリアルの共振周波数変化 (2011)
  • Author(s): 明賀聖慈
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] 細線状活性層を有するGaInAsP/InP横方向電流注入型DFBレーザ (2011)
  • Author(s): 二見充輝
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 横方向電流注入型レーザにおける発振特性のストライプ幅依存性 (2011)
  • Author(s): 進藤隆彦
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 1.3-μm帯pnp-AlGaInAs/InPレーザトランジスタの室温連続動作 (2011)
  • Author(s): 佐藤孝司
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響 (2011)
  • Author(s): 佐藤憲明
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析 (2011)
  • Author(s): 雨宮智宏
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 幅広ギャップ構造を有するBCB埋め込み温度無依存SiスロットMZI (2011)
  • Author(s): 渥美裕樹
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-24
• [Presentation] 多層化されたアモルファスシリコン細線導波路の低損失伝搬特性 (2011)
  • Author(s): 姜唆〓
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-24
• [Presentation] 細線状活性層を有する分布反射型レーザの変調帯域拡大と10Gbit/s低消費電力動作 (2011)
  • Author(s): 高橋大佑
  • Organizer: The 2011 IEICE General conf.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-03-16
• [Presentation] 多層光回路構造実現のための異種基板積層技術とデバイス特性 (2011)
  • Author(s): 西山伸彦
  • Organizer: The 2011 IEICE General conf.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-03-14
• [Presentation] Meta-photonic device ～possibility of permeability control in semiconductor-based photonic device combined with metamaterial～ (2011)
  • Author(s): T.Amemiya
  • Organizer: Technical Report of TEICE
  • Place of Presentation: Kagoshima, Japan
  • Year and Date: 2011-02-28
• [Presentation] Lateral Current Injection GaInAsP/InP Llaser for Membrane Based Photonic Circuits (2011)
  • Author(s): S.Arai
  • Organizer: SPIE Photonics West Conference 2011
  • Place of Presentation: San Francisco, California, USA
  • Year and Date: 2011-01-24
• [Presentation] Si・SOI基板上レーザ素子の現状 (2011)
  • Author(s): 西山伸彦
  • Organizer: レーザー学会学術講演会第31回年次大会
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-01-10
• [Presentation] Lateral Current Injection 1550 nm Wavelength DFB Laser with a-Si Surface Grating (2010)
  • Author(s): T.Shindo
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] Si Slot Type Athermal Wavelength Filter Embedded with Benzocyclobutene (2010)
  • Author(s): Y.Atsumi
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding (2010)
  • Author(s): Y.Maeda
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] Membrane DFB lasers on SOI (2010)
  • Author(s): S.Arai
  • Organizer: Asia Communications and Photonics Conf. and Exhibition 2010 (ACP2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-12-09
• [Presentation] Lateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating (2010)
  • Author(s): T.Shindo
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-11
• [Presentation] Metamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers (2010)
  • Author(s): T.Amemiya
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-10
• [Presentation] Low-Loss Si-Slot Waveguides and Ring Resonator Embedded with Benzocyclobutene (2010)
  • Author(s): Y.Atsumi
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-09
• [Presentation] First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure (2010)
  • Author(s): T.Okumura
  • Organizer: The 22nd IEEE Int. Semiconductor Laser Conf. (ISLC 2010)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-09-29
• [Presentation] Membrane Lasers on Si-Low Power Consumption Lasers for Monolithic Integration (2010)
  • Author(s): S.Arai
  • Organizer: Workshop on Semiconductor Lasers, at The 22nd IEEE Int. Semiconductor Laser Conf. (ISLC 2010)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-09-26
• [Presentation] Membrane-Type Photonic Devices for Optical Circuits on SOI (2010)
  • Author(s): S.Arai
  • Organizer: 2010 Int.Conf.on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-24
• [Presentation] Loss Measurement of Multiple Layer a-Si Waveguides toward 3D Si-Optical Circuits (2010)
  • Author(s): J.Kang
  • Organizer: 2010 Int.Conf.on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-24
• [Presentation] a-Si表面回折格子を用いた横方向電流注入型DFBレーザ (2010)
  • Author(s): 進藤隆彦
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] 半導体薄膜DFBレーザの電流注入動作 (2010)
  • Author(s): 小口貴之
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] SOI基板上集積二重導波路構造レーザの理論検討 (2010)
  • Author(s): 伊藤瞳
  • Organizer: The 71st Autumn Meeting, 2010, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] 活性層分離型分布反射型レーザの変調特性の構造依存性 (2010)
  • Author(s): 高橋大佑
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] GaInAsP/InP細線状活性層を有するDBRの透過反射スペクトル特性 (2010)
  • Author(s): 信野圭祐
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] III-V族半導体薄膜光集積回路実現に向けた薄膜品質の改善 (2010)
  • Author(s): 前田泰奈
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] 表面活性化接合法によるSOI導波路上GaInAsP薄膜構造の形成 (2010)
  • Author(s): 長部亮
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] BCB埋め込みスロットリング共振器の低損失化 (2010)
  • Author(s): 渥美裕樹
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] GaInAsP/InP MMIとメタマテリアル融合素子における透磁率変化の観測 (2010)
  • Author(s): 雨宮智宏
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響 (2010)
  • Author(s): 瀧野祐太
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-08-19
• [Presentation] Low power consumption semiconductor lasers for optical interconnections (2010)
  • Author(s): N.Nishiyama
  • Organizer: 15th OptoElectronics and Communications Conference, (OECC 2010)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2010-07-08
• [Presentation] Current Status of III-V/Si Hybrid Optical Devices (2010)
  • Author(s): N.Nishiyama
  • Organizer: 15th OptoElectronics and Communications Conference, (OECC 2010)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2010-07-05
• [Presentation] Stabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface Activated Bonding (2010)
  • Author(s): R.Osabe
  • Organizer: The 37th International Symposium on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Direct Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells (2010)
  • Author(s): K.Shinno
  • Organizer: The 37th Int.Sym.on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits (2010)
  • Author(s): D.Kondo
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-03
• [Presentation] Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2010)
  • Author(s): Y. Takino, M. Shirao, T. Sato, N. Nishiyama, and S. Arai
  • Organizer: The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding (2010)
  • Author(s): S.Kondo
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Dynamic Characteristics of Lateral Current Injection Laser (2010)
  • Author(s): T.Okumura
  • Organizer: The 37th International Symposium on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2010)
  • Author(s): Y.Takino
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials : Device Design (2010)
  • Author(s): T.Amemiya
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser -Improved Quantum Efficiency Operation- (2010)
  • Author(s): H.Ito
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-01
• [Presentation] Magnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial (2010)
  • Author(s): T.Amemiya
  • Organizer: Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2010-05-21
• [Presentation] Large Signal Analysis of AlGaInAs/InP Laser Transistor (2010)
  • Author(s): M. Shirao, N. Nishiyama, S. Lee, and S. Arai
  • Organizer: Conference on Lasers and Electro Optics/ International Quantum Electronics Conference (CLEO/IQEC)2010
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2010-05-17
• [Presentation] Large Signal Analysis of AlGaInAs/InP Laser Transistor (2010)
  • Author(s): M.Shirao
  • Organizer: Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2010-05-17
• [Presentation] Si/III-Vハイブリッド光デバイスと関連技術 (2010)
  • Author(s): N.Nishiyama
  • Organizer: 日本学術振興会半導体界面制御技術第154委員会研究会
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-05-13
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AraiLab/