| Project/Area Number |
22360268
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MAEDA Toshihiko 高知工科大学, 環境理工学群, 教授 (50399169)
XU Qiu 京都大学, 原子炉実験所, 准教授 (90273531)
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| Co-Investigator(Renkei-kenkyūsha) |
NITTA Noriko 高知工科大学, ナノ, 講師 (80412443)
KANBE Hiroshi 高知工科大学, 名誉教授 (10299373)
YOSHIIE Toshimasa 京都大学, 原子炉実験所, 教授 (20124844)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2011: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 格子欠陥 / 半導体 / イオン照射 / ボイド / ナノセル / 原子空孔 / 格子間原子 / ナノ構造 / 半導体超微細化 / 電子顕微鏡 / 自己組織化 / FIB / GaSb / InSb |
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| Research Abstract |
In several semiconductors, nano-scale cellular structure is formed on their surfaces by ion irradiation. We aimed to establish the novel nano-fabrication technique utilizing this astonishing phenomenon and investigated nanocell fabrication for GaSb, InSb and Ge. The cell lattice with 100 nm cell interval on InSb surface develops regularly without secondary void formation by irradiation at room temperature, however, the regularity is insufficient at lower temperature. GaSb reveal the inverse results, that is, the secondary voids are created at room temperature and the cell lattice development is better at lower temperature. Furthermore filling in the cells is tried.
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