Oxygen vacancy induced changes in electronic properties and electric field control of transport properties in correlated electron oxides

• Project/Area Number: 22360280
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: SAWA Akihito 独立行政法人産業技術総合研究所, 電子光技術研究部門, 研究グループ長 (10357171)
• Co-Investigator(Renkei-kenkyūsha): YAMADA Hiroyuki 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762) ; INOUE Isao 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00356502)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2011: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2010: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
• Keywords: 表面・界面 / 強相関エレクトロニクス / セラミックス / 表面・界面物性

Research Abstract

From the cell-area dependence of the resistive switching properties in Pt/Nb-doped SrTiO_3memory cells, we found that the electromigration of oxygen vacancy occurs mainly at the edge of the memory cell. In order to realize the electric-field control of tr

Research Products

• [Journal Article] Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature (2013)
  • Author(s): P. -H. Xiang, S. Asanuma, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, M. Kawasaki, Y. Iwasa
  • Journal Title: Advanced Materials Volume: 25 Issue: 15 Pages: 2158-2161
  • DOI: 10.1002/adma.201204505
  • Peer Reviewed
• [Journal Article] Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi_<1->FeO_3 Interfaces (2012)
  • Author(s): A. Tsurumaki, H. Yamada, and A. Sawa
  • Journal Title: Advanced Functional Materials Volume: 22 Issue: 5 Pages: 1040-1047
  • DOI: 10.1002/adfm.201102883
  • Peer Reviewed
• [Journal Article] Phase diagrams of strained Ca1-xCexMnO3 films (2012)
  • Author(s): P.-H. Xiang, H. Yamada, H. Akoh, and A. Sawa
  • Journal Title: Journal Applied Physics Volume: 112 Issue: 11 Pages: 113703-113703
  • DOI: 10.1063/1.4768198
  • Peer Reviewed
• [Journal Article] Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces (2012)
  • Author(s): A. Tsurumaki-Fukuchi, H. Yamada, and A. Sawa
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1430 Pages: 1-6
  • DOI: 10.1557/opl.2012.933
  • Peer Reviewed
• [Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites (2011)
  • Author(s): P.H.Xiang, S.Asanuma, H.Yamada, I.H. Inoue, H.Sato, H.Akoh, A.Sawa, K.Ueno, H.T.Yuan, H.Shimotani, M.Kawasaki, Y.Iwasa
  • Journal Title: Advanced Materials Volume: 23 Issue: 48 Pages: 5822-5827
  • DOI: 10.1002/adma.201102968
  • Peer Reviewed
• [Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films (2010)
  • Author(s): S. Asanuma, P.-H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa
  • Journal Title: Applied Physics Letters Volume: 97巻 Issue: 14
  • DOI: 10.1063/1.3496458
  • Peer Reviewed
• [Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films (2010)
  • Author(s): 浅沼周太郎
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Journal Article] Interface band profiles of Mott-insulator/Nb:SrTiO_3 heterojunctions as in vestigated by optical spectroscopy (2010)
  • Author(s): 中村優男
  • Journal Title: Physical Review B Volume: 82
  • Peer Reviewed
• [Presentation] Resistive switching memory consisting of ferroelectric oxides (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: New Non-Volatile Memory Workshop 2012
  • Place of Presentation: Hsinchu, Taiwan
  • Year and Date: 2012-11-15
• [Presentation] Resistance Change Memory consisting of ferroelectric oxides (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: 9th International Symposium on Advanced Gate Stack Technology
  • Place of Presentation: Saratoga Spring, NY, USA
  • Year and Date: 2012-10-04
• [Presentation] Ferroelectric Resistive Switching at Schottky-like BiFeO3 interfaces (2012)
  • Author(s): A. Sawa, A. Tsurumaki-Fukuchi, and H. Yamada
  • Organizer: Nature Conference "Frontiers in Electronic Materials"
  • Place of Presentation: Aachen, Germany
  • Year and Date: 2012-06-20
• [Presentation] (Nd,Sm)NiO3電気二重層トランジスタの動作特性 (2012)
  • Author(s): 浅沼周太郎
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] Pt/BiFeO3界面の抵抗スイッチング効果と界面電子状態 (2012)
  • Author(s): 鶴巻厚、山田浩之、澤彰仁
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] Electric-Field Control of Electronic Phases in Correlated Electron Oxides (2011)
  • Author(s): 澤彰仁
  • Organizer: 2011 FIRST-QS2C Workshop on Emergent Phenomena of Correlated Materials
  • Place of Presentation: ANAインターコンチネンタル万座ビーチリゾート(沖縄県)
  • Year and Date: 2011-12-14
• [Presentation] Control of electronic phases in electrolyte-gated (Nd,Sm)NiO3 thin film at room temperature (2011)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穂博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 18th International Workshop on Oxide Electronics
  • Place of Presentation: Marriot Napa Valley (Napa Valley, USA)
  • Year and Date: 2011-09-26
• [Presentation] Resistive switching based on ferroelectric polarization reversal at Schottky-like interfaces of BiFeO3 thin films (2011)
  • Author(s): 鶴巻厚、山田浩之、澤彰仁
  • Organizer: 18th International Workshop on Oxide Electronics
  • Place of Presentation: Marriot Napa Valley (Napa Valley, USA)
  • Year and Date: 2011-09-26
• [Presentation] 電気二重層FETによる(Nd,Sm)NiO3の室温での電子相制御 (2011)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穂博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] BiFeO3薄膜の強誘電分極とショットキー的界面を用いた抵抗変化メモリ (2011)
  • Author(s): 鶴巻厚、山田浩之、澤彰仁
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] Bipolar resistive switching at rectifying oxide interfaces (2011)
  • Author(s): 澤彰仁
  • Organizer: 2011 International Symposium on Next Generation Tera-bit Memory Technology
  • Place of Presentation: Hanyang University (Seoul, Korea)(招待講演)
  • Year and Date: 2011-05-19
• [Presentation] Electric field control of the metal-insulator transition in electrolyte-gated (Nd,Sm)NiO3 thin films (2011)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穂博司、澤彰仁、上野和紀、下谷秀和、Yuan Hongtao、川崎雅司、岩佐義宏
  • Organizer: Materials Research Society 2011 Spring Meeting
  • Place of Presentation: Moscone West (San Francisco, USA)
  • Year and Date: 2011-04-26
• [Presentation] BiFeO_3薄膜における分極誘起抵抗スイッチング (2011)
  • Author(s): 鶴巻厚、山田浩之、澤彰仁
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-26
• [Presentation] A possible model of resistive switching mechanism in Ti/Pr_<0.5>Ca_<0.5>MnO_3 junctions (2011)
  • Author(s): 浅沼周太郎、山田浩之、赤穗博司、澤彰仁
  • Organizer: 2011 International Workshop on Dielectric Thin Films for Future Electron Devices
  • Place of Presentation: 東京工業大学(東京都)
  • Year and Date: 2011-01-21
• [Presentation] Impacts of oxygen vacancy on interfacial band diagrams in perovskite-oxide resistive switching junctions (2010)
  • Author(s): 澤彰仁
  • Organizer: New Non-Volatile Memory Workshop 2010
  • Place of Presentation: Hsinchu (Taiwan)
  • Year and Date: 2010-11-12
• [Presentation] Control of metal-insulator transition in NdNiO_3 electric double-layer transistors (2010)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 17^<th> International Workshop on Oxide Electronics
  • Place of Presentation: 淡路夢舞台国際会議場(兵庫県)
  • Year and Date: 2010-09-20
• [Presentation] 電気二重層FETによるNdNiO_3の金属-絶縁体転移の電界制御 (2010)
  • Author(s): 浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-15
• [Presentation] Impacts of Oxygen Vacancy on Band Diagrams and Resistive Switching in Preovskite-Oxide Junctions (2010)
  • Author(s): 澤彰仁
  • Organizer: International Symposium on Integrated Functionalities (ISIF)
  • Place of Presentation: San Juan (Puerto Rico)
  • Year and Date: 2010-06-14
• [Presentation] mpacts of Oxygen Vacancy on Band Diagrams and Resistive Switching in Preovskite-Oxide Junctions (2010)
  • Author(s): A. Sawa
  • Organizer: International Symposium on Integrated Functionalities (ISIF)
  • Place of Presentation: San Juan, Puerto Rico
• [Presentation] Ferroelectric Resistive Switching at Schottky-like BiFeO3 interfaces
  • Author(s): 澤彰仁
  • Organizer: Nature Conference “Frontiers in Electronic Materials”
  • Place of Presentation: Aachen, Germany
  • Invited
• [Presentation] Mott FET
  • Author(s): 澤彰仁
  • Organizer: ITRS workshop on Emerging Research Logic Devices
  • Place of Presentation: Bordeaux, France
  • Invited
• [Presentation] Resistance Change Memory consisting of ferroelectric oxides
  • Author(s): 澤彰仁
  • Organizer: 9th International Symposium on Advanced Gate Stack Technology
  • Place of Presentation: Saratoga Spring, NY, USA
  • Invited
• [Presentation] Resistive switching memory consisting of ferroelectric oxides
  • Author(s): 澤彰仁
  • Organizer: New Non-Volatile Memory Workshop 2012
  • Place of Presentation: Hsinchu, Taiwan
  • Invited
• [Presentation] Resistive Switching Effect in Conductive Ferroelectric Oxides
  • Author(s): 澤彰仁
  • Organizer: 2012 Electric Pulse Induced Changes in Oxides
  • Place of Presentation: Buenos Aires, Argentina
  • Invited
• [Presentation] Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 2012 Materials Research Society Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] BiFeO3薄膜を用いた強誘電抵抗変化メモリの動作特性
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] 電気二重層ゲートによる強相関酸化物の電子相制御
  • Author(s): 浅沼 周太郎、Xiang Ping-Hua、山田 浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] (Nd,Sm)NiO3電気二重層トランジスタの動作特性
  • Author(s): 浅沼 周太郎、Xiang Ping-Hua、山田 浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO3 thin film
  • Author(s): 浅沼 周太郎、Xiang Ping-Hua、山田 浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto International Conference Center, Kyoto
• [Presentation] Impacts of changing in interfacial band structures on ferroelectric resistive switching effect at Schottky-like BiFeO3 interfaces
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: The 19th Workshop on Oxide Electronics
  • Place of Presentation: Palace het Loo, Apeldoorn, the Netherlands
• [Presentation] Large and hysteretic resistance change in electrolyte-gated (Nd,Sm)NiO3 thin film
  • Author(s): 浅沼 周太郎、Xiang Ping-Hua、山田 浩之、佐藤弘、井上公、赤穗博司、澤彰仁、中尾裕則、山崎裕一、村上洋一、上野和紀、川崎雅司、岩佐義宏
  • Organizer: The 19th Workshop on Oxide Electronics
  • Place of Presentation: Palace het Loo, Apeldoorn, the Netherlands
• [Presentation] BiFeO3強誘電抵抗変化メモリにおける界面電子構造に基づいた動作特性の制御
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] HfO2ゲート酸化膜を用いた強相関酸化物(Nd,Sm)NiO3の電子相制御
  • Author(s): 浅沼 周太郎、島久、山田 浩之、井上公、赤穗博司、秋永広幸、澤彰仁
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学