| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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| Research Abstract |
This report describes fabrication of doped amorphous carbon films and its application to photovoltaic cells. Pulse magnetron sputtering method was used to deposit amorphous carbon films. Nitrogen, antimony and boron were used as the dopants, because nitrogen and antimony are 15-group elements, and boron is 13-group element. Annealing process was utilized to reduce defect density of amorphous carbon films. Deposited films were annealed under Ar and H2 plasma atmosphere. Annealed amorphous carbon films with antimony of 1.0 [mol%] under H2 plasma atmosphere at 900 [℃] showed band gap of 2.63 [eV] and dangling bond density of as low as 3.0×10^16 [cm-3]. This value is as same as amorphous silicon films. Finally, photovoltaic cell consisting of amorphous carbon was fabricated. It was found that the cell generates Voc of 20～49.0 mV，and Isc of0.01uA.
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