Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
| Project/Area Number |
22360312
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MORITA Kazuki 東京大学, 大学院・工学系研究科, 教授 (00210170)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIKAWA Takesshi 東京大学, 環境安全研究センター, 准教授 (90435933)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2011: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2010: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Keywords | 溶融・凝固 / 太陽電池シリコン / 低温凝固精製 / 銅 / スズ / 融体・凝固 / ボロン / 融体 / 凝固 |
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| Research Abstract |
By unidirectional solidification of Cu-Si and Sn-Si alloys, optimized cooling condition for producing a bulk Si crystal as well as the refining effect was investigated. Bulk Si was obtained by controlling the temperature gradient and cooling rate for both solvents and the solidification rates were found to be controlled by the diffusion of Si in the solvents. Refining effects were no so significant as that of Al-Si solvent which was clarified and our former research. From the thermodynamic measurement of Sn-Si-B system, instability of B in the melts was clarified and more effective removal of B using CaO-CaF2-SiO2 slag was verified.
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Report
(4 results)
Research Products
(20 results)
