In-depth profiling of non-radiative carrier recombination in the multi-junction solar cells by using the photothermal spectroscopy
| Project/Area Number |
22360412
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Energy engineering
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| Research Institution | University of Miyazaki |
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Principal Investigator |
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2013: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2010: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Keywords | 多接合太陽電池 / 量子井戸太陽電池 / 熱エネルギー損失 / 非発光再結合 / 圧電素子光熱変換分光法 / 熱エネルギー損失測定 |
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| Research Abstract |
Based on the signal generation and propagation principle of the photothermal spectroscopy, we have developed the in-depth profiling technique that detects the non-radiative recombination loss of photo-generated carriers in the multi-junction solar cells. After applying the frequency-dependent piezoelectric photothermal (PPT) measurements to the multi-quantum well (MQW) structure inserted p-i-n GaAs solar cells, we detected the PPT signals originating from MQWs even in the high frequency measuring conditions. When higher frequency, the PPT signals generated within the MQW region are expected to exponentially decrease because of decreasing the thermal diffusion length. Present experimental results show clearly that photo-generated carries in MQW can thermally escape and the carrier collection efficiency at room temperature is significantly improved.
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Report
(5 results)
Research Products
(78 results)
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[Presentation] Nitrogen related deep levels in GaAsN films investigated by a temperature variation of piezoelectric photothermal signal amplitude2011
Author(s)
K.Kashima, S.Yamamoto, Y.Nakano, K.Sakai, H.Suzuki, M.Inagaki, M.Yamaguchi, A.Fukuyama, T.Ikari
Organizer
14th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors
Place of Presentation
Miyazaki, Japan
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