Surface atomic structure of compound semiconductors treated with active nitrogen species

• Project/Area Number: 22510117
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: National Institute for Materials Science
• Principal Investigator: OHTAKE Akihiro 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 (30267398)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000); Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: ナノ表面・界面 / 化合物半導体 / 表面構造 / 希薄窒化半導体 / 表面再配列 / 分子線エピタキシー / ガリウムヒ素

Research Abstract

The initial nitridation processes of GaAs(001) have been systematically studied. The structure and composition of the nitrided surface strongly depends on the preparation condition. When the GaAs(001)-(2x4) surfaces were exposed to the active N species under the As4 flux, N atoms are initially incorporated into the As lattice site at the third atomic layer in the β2(2x4) structure. On the other hand, for the nitridation without the As4 flux, the N-induced (3x3) reconstructions are formed.

Research Products

• [Journal Article] Atomic-scale characterization of the N incorporation on GaAs(001) (2011)
  • Author(s): A. Ohtake
  • Journal Title: Journal of Applied Physics Volume: 110
  • Peer Reviewed
• [Journal Article] Atomic scale characterization of the N incorporation in GaAs (001) (2011)
  • Author(s): A.Ohtake
  • Journal Title: Journal of Applied Physics Volume: 110 Issue: 3
  • DOI: 10.1063/1.3609066
  • Peer Reviewed
• [Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions (2012)
  • Author(s): A. Ohtake
  • Organizer: 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara, Japan
  • Year and Date: 2012-09-24
• [Presentation] Initial nitridation processes of GaAs(001) (2012)
  • Author(s): A. Ohtake
  • Organizer: 31st International Conference on the Physics of Semiconductors
  • Place of Presentation: Zurich, Switzerland
  • Year and Date: 2012-07-31
• [Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions (2012)
  • Author(s): Akihiro Ohtake
  • Organizer: 17th International Conference on Molecular Beam Epitaxy, September 2012
  • Place of Presentation: Nara, Japan
  • Invited
• [Presentation] Initial nitridation processes of GaAs(001) (2012)
  • Author(s): Akihiro Ohtake
  • Organizer: 31st International Conference on the Physics of Semiconductors, July 2012
  • Place of Presentation: Zürich, Switzerland
• [Presentation] 活性窒素種を照射したGaAs(001)表面構造 (2011)
  • Author(s): 大竹晃浩
  • Organizer: 2011年秋季 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-09-02
• [Presentation] 活性窒素種を照射したGaAs(001)表面構造 (2011)
  • Author(s): 大竹晃浩
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県山形市)
  • Year and Date: 2011-09-02