Surface atomic structure of compound semiconductors treated with active nitrogen species
Project/Area Number |
22510117
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Nanomaterials/Nanobioscience
|
Research Institution | National Institute for Materials Science |
Principal Investigator |
OHTAKE Akihiro 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 (30267398)
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
Keywords | ナノ表面・界面 / 化合物半導体 / 表面構造 / 希薄窒化半導体 / 表面再配列 / 分子線エピタキシー / ガリウムヒ素 |
Research Abstract |
The initial nitridation processes of GaAs(001) have been systematically studied. The structure and composition of the nitrided surface strongly depends on the preparation condition. When the GaAs(001)-(2x4) surfaces were exposed to the active N species under the As4 flux, N atoms are initially incorporated into the As lattice site at the third atomic layer in the β2(2x4) structure. On the other hand, for the nitridation without the As4 flux, the N-induced (3x3) reconstructions are formed.
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Report
(4 results)
Research Products
(8 results)