Studies of the interaction between semiconductor nanocrystals and metal localized surface plasmons by photoluminescence and Raman scattering measurements
| Project/Area Number |
22540330
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Hiroshima Institute of Technology (2012)
Nara Institute of Science and Technology (2010-2011) |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TOMITA Satoshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (90360594)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 半導体ナノ粒子 / 金属ナノ薄膜 / 局在型表面プラズモン / 発光 / ラマン散乱 |
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| Research Abstract |
We studied photoluminescence intensity of semiconductor nanocrystals in the vicinity of metals. With a decrease in metal-semiconductor distance, the PL intensity was enhanced, and then it decreased dramatically. These results can be explained by considering both the light enhancement effect and the energy transfer effect from the semiconductors induced by the free electrons in the metals. The metal-semiconductor distance for the highest photoluminescence efficiency was found.
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Report
(4 results)
Research Products
(11 results)
