Research on the high-power pulsed sputtering discharge and its application to ion sources for thin film fabrication.
| Project/Area Number |
22540501
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Plasma science
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| Research Institution | Ibaraki University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 放電 / 金属プラズマ源 / スパッタリング / 金属イオン源 / 大電力パルス放電 / 薄膜合成 / 熱電半導体 / マグネシウムシリサイド / 結晶構造 / プラズマ / 薄膜形成 / グロー放電 / パルスパワー / 金属イオン / 磁場閉じ込め |
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| Research Abstract |
In order to explore discharge properties of high-power pulsed magnetron sputtering (HPPMS)、 the voltage-current density characteristics and emission spectra were measured. It was found that HPPMS operated in the abnormal glow mode and the discharge area was extended over the whole radius of the cathode. The discharge voltage was found to rise while the primary electron confinement degraded by extention of the discharge area. Next、 we proposed an inhomogeneous Penning suputterinf device as a novel high-density metal ion source. It uses plasma drift as the mechanism of cross-field ion extraction.
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Report
(4 results)
Research Products
(29 results)
