| Project/Area Number |
22540506
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Plasma science
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YASUDA Makoto 大阪大学, 大学院・工学研究科, 准教授 (40273601)
KIUCHI Masato 独立行政法人産業技術総合研究所, ユビキタスエネルギー研究部門, 主任研究員 (50356862)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | インジウム / イオン / 触媒化学 / 触媒 / イオンビーム |
|---|
| Research Abstract |
Chemical substances that contain indium (In) and silicon (Si) in close proximity are known to catalyze certain organic chemical reactions. We have demonstrated that In implanted SiO_2thin films, formed under some specific conditions, contain In atoms on or near the substrate surface in close proximity with Si atoms and catalyze a reaction of benzhydrol with acetylacetone. In this study, dependence of the catalytic ability of an In implanted SiO_2thin film on the ion incident energy and dose for the In ion implantation process has been examined. It has been shown that a right combination of ion energy and ion dose must be selected in the film preparation process for the manifestation of the catalytic effect.
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