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Study on the fabrication and high-performance of ultra-micro lithium secondary batteries embedded in silicon chips

Research Project

Project/Area Number 22550167
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Functional materials/Devices
Research InstitutionHosei University

Principal Investigator

KURIYAMA Kazuo  法政大学, 理工学部, 教授 (20125082)

Co-Investigator(Kenkyū-buntansha) KUSHIDA Kazumasa  大阪教育大学, 教育学部, 准教授 (80372639)
Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywords超微小電池 / リチウム2次電池 / シリコンチップ埋め込み / リチウム2次電池 / 透過型電子顕微鏡観察 / 多結晶シリコン負極 / リチウム窒化物 / スピン・オン・グラス電解質 / 原子間力顕微鏡 / 原子間力顕微鏡観察
Research Abstract

All-solid-state Li ion secondary battery, consisting of multiple layers (Poly Si anode / a poly methacrylate acetate (PMMA) electrolyte / LiMn2O4 cathode), is prepared using Si very-large-scale integration technologies. The PMMA solid electrolyte containing LiClO4 for the battery is embedded into an individual trench (300×300 μm2 in area and 2.0 μm in depth) of a double insulating layer (Si3N4/SiO2), which is directly stacked on a poly Si layer, leading to a Li free anode. The individual battery demonstrates a specific capacity of 3.70 nAh/cm2 obtained for the charge of 3 nA anddischarge of 10 pA.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (40 results)

All 2013 2012 2011 2010

All Journal Article (19 results) (of which Peer Reviewed: 18 results) Presentation (21 results)

  • [Journal Article] Three hundred micronsquared all-solid-state Li ionsecondary battery fabricated by Sivery large scale integrationtechnology2013

    • Author(s)
      Y. Yamada, T. Nozaki, K. Kuriyama,K.Kushida
    • Journal Title

      J. Alloy Compounds

      Volume: 551巻 Pages: 44-47

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Three hundred micron squared all-solid-state Li ion secondary battery fabricated by Si very large scaleintegration technology2013

    • Author(s)
      Y. Yamada, T. Nozaki, K. Kuriyama, K. Kushida
    • Journal Title

      Journal of Alloys and Compounds

      Volume: 555 Pages: 44-47

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Synthesis and physical properties of Li7V0.5Mn0.5N42013

    • Author(s)
      Y. Suzuki, Y. Inoue, K. Kuriyama, K. Kushida
    • Journal Title

      J. Crystal Growth

      Volume: 262 Pages: 153-156

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of the lattice defects in Ge-ion implanted ZnO bulk single crystals by Rutherford Backscattering: Origins of low resistivity2013

    • Author(s)
      K. Kamioka, T. Oga, Y. Izawa, K. Kuriyama, K. Kushida
    • Journal Title

      Nucl. Instrum. Methods Phys. Res. B

      Volume: 未定

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 髪の毛サイズの超微細リチウム電池の開発とそのマテリアルの性質2012

    • Author(s)
      串田一雅、栗山一男
    • Journal Title

      Material Stage

      Volume: 12巻 Pages: 43-46

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
  • [Journal Article] Origins oflow resistivity in Al ion-implantedZnO bulk single crystals2011

    • Author(s)
      T. Oga, Y. Izawa, K. Kuriyama, K.Kushida, and A. Kinomura
    • Journal Title

      J. Appl. Phys

      Volume: 109巻

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thermally stimulated current studies on electron-irradiated single crystal ZnO bulk : Dual light illumination effect2011

    • Author(s)
      T.Oga, Y.Izawa, K.Kuriyama, K.Kushida, Q.Xu
    • Journal Title

      AIP Conference Proceedings

      Volume: 1399 Pages: 67-68

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of carbon interstitial in C-ion implanted ZnO bulk single crystals by a Nuclear reaction analysis : An origin of low resistivity2011

    • Author(s)
      Y.Izawa, K.Matsumoto, T.Oga, K.Kuriyama, K.Kushida, A.Kinomura
    • Journal Title

      AIP Conference Proceedings

      Volume: 1399 Pages: 69-70

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Origins of low resistivity in Al ion-implanted ZnO bulk single crystals2011

    • Author(s)
      T.Oga, Y.Izawa, K.Kuriyama, K.Kushida, A.Kinomura
    • Journal Title

      J.Appl.Phys.

      Volume: 109

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of the interface of thin GaN layers on c- and m-plane ZnO substrates by Rutherford backscattering2011

    • Author(s)
      Y.Izawa, T.Oga, T.Ida, K.Kuriyama, A.Hashimoto, H.Kotake, T.Kamijoh
    • Journal Title

      Appl.Phys.Lett.

      Volume: 99

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Persistent Photoconductivity in electron-irradiated ZnO bulk single crystals : Evaluation of the metastable conductive state by the dual light illumination2011

    • Author(s)
      T.Oga, Y.Izawa, K.Kuriyama, K.Kushida, Q.Xu
    • Journal Title

      Solid State Commun.

      Volume: 151 Pages: 1700-1703

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of zincinterstitial in Si-ion implanted ZnObulk single crystals by a Rutherfordbackscattering study: An origin of lowResistivity2010

    • Author(s)
      Y. Izawa, K. Matsumoto, K. Kuriyama,K.Kushida
    • Journal Title

      Nucl. Instrum. Methods B

      Volume: 268巻 Pages: 2104-2106

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electronic structuraldifference between Li7VN4and Li7MnN4due to the replacement of V with Mn: Asimulation by a discrete variational Xα method2010

    • Author(s)
      K. Kushida,Y. Ichihashi, Y. Suzuki, K.Kuriyama
    • Journal Title

      Physica B

      Volume: 405巻 Pages: 2305-2310

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ramanscattering from the filled tetrahedralsemiconductor LiMgAs2010

    • Author(s)
      K. Kuriyama, Y. Yamashita, Y. Suzuki,K.Matsumoto, K. Kushida
    • Journal Title

      29thInternational Conference on thePhysics of Semiconductors, AIPConference Proceedings

      Volume: 1199巻 Pages: 67-68

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Persistent photoconductivityand photo-responsible defect in 30MeV-electron irradiated singlecrystal ZnO2010

    • Author(s)
      K. Kuriyama, K. Matsumoto, K. Kushida,Q. Xu
    • Journal Title

      29th InternationalConference on the Physics ofSemiconductors, AIP ConferenceProceedings

      Volume: 1199巻 Pages: 89-90

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electronic structural difference between Li_7VN_4 and Li_7MnN_4 due to the replacement of V with Mn : A simulation by a discrete variational Xα method2010

    • Author(s)
      K.Kushida
    • Journal Title

      Physica B

      Volume: 405 Pages: 2305-2310

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Raman scattering from the filled tetrahedral semiconductor LiMgAs2010

    • Author(s)
      K.Kuriyama
    • Journal Title

      29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings

      Volume: 1199 Pages: 67-68

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO2010

    • Author(s)
      K.Kuriyama
    • Journal Title

      29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings

      Volume: 1199 Pages: 89-90

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study : An origin of low resistivity2010

    • Author(s)
      Y.Izawa
    • Journal Title

      Nucl.Instrum.Methods B

      Volume: 268 Pages: 2104-2106

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] リチウム二次電池正極材料Li8SiN4の結晶作成と物性評価2013

    • Author(s)
      山下大輝、桑野慎一、栗山一男、串田一雅
    • Organizer
      60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Related Report
      2012 Final Research Report
  • [Presentation] リチウム二次電池正極材料Li8SiN4の結晶作成と物性評価2013

    • Author(s)
      山下大輝、桑野慎一、栗山一男、串田一雅
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] LiMg0.9Zn0.1Nの結晶作成と物性評価2012

    • Author(s)
      井上裕輔、桑野慎一、栗山一男、串田一 雅
    • Organizer
      59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2012 Final Research Report
  • [Presentation] リチウム2次電池正極材料L8GeN4の結晶作成と物性評価2012

    • Author(s)
      桑野慎一、青山晴宣、栗山一男、串田一雅
    • Organizer
      59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2012 Final Research Report
  • [Presentation] リチウム2次電池正極材料Li_8GeN_4の結晶作成と物性評価2012

    • Author(s)
      桑野慎一、青山晴宣、栗山一男、串田一雅
    • Organizer
      59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] LiMg_<0.9>Zn_<0.1>Nの結晶作成と物性評価2012

    • Author(s)
      井上裕輔、桑野慎一、栗山一男、串田一雅
    • Organizer
      59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] Neutron-transmuted carbon-14 in neutron-irradiated GaN: Compensation of DX-like center2012

    • Author(s)
      T. Ida, T. Oga. Y. Izawa, K. Kuriyama, K. Kushida,
    • Organizer
      第31回半導体物理学国際会議
    • Place of Presentation
      スイス・チューリヒ
    • Related Report
      2012 Annual Research Report
  • [Presentation] Origins of low resistivity and Ge donor level in Ge ion- implanted ZnO bulk single crystals2012

    • Author(s)
      K. Kamioka, T. Oga, Y. Izawa, K. Kuriyama, K. Kushida
    • Organizer
      第31回半導体物理学国際会議
    • Place of Presentation
      スイス・チューリヒ
    • Related Report
      2012 Annual Research Report
  • [Presentation] Characterization of the lattice defects in Ge-ion implanted ZnO bulk single crystals by Rutherford Backscattering: Origins of low resistivity2012

    • Author(s)
      K. Kamioka, T. Oga, Y. Izawa, K. Kuriyama, K. Kushida
    • Organizer
      第18回イオンビームによる物質改質国際会議
    • Place of Presentation
      中国・青島
    • Related Report
      2012 Annual Research Report
  • [Presentation] Alイオン注入ZnOバルク単結晶の低抵抗化の起源2011

    • Author(s)
      尾賀孝宏
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Li7V0.5Mn0.5N4の結晶作成と物性評価、2011

    • Author(s)
      井上裕輔、鈴木優平、栗山一男、串田一雅
    • Organizer
      第58回応用物理学関係連合講演会、
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Related Report
      2012 Final Research Report
  • [Presentation] Li_7V_<0.5>Mn_<0.5>N_4の結晶作成と物性評価2011

    • Author(s)
      井上裕輔
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Synthesis and some physicalproperties of Li7V0.5Mn0.5N4、Int.2011

    • Author(s)
      Y. Suzuki, Y. Inoue, K. Kuriyama, K.Kushida
    • Organizer
      Conf.Materials for Advanced Technology(ICMAT 2011)
    • Place of Presentation
      Singapore
    • Related Report
      2012 Final Research Report
  • [Presentation] Synthesis and some physical properties of Li_7V_<0.5>Mn_<0.5>N_42011

    • Author(s)
      Y.Suzuki, Y.Inoue, K.Kuriyama, K.Kushida
    • Organizer
      Int.Conf.Materials for Advanced Technology (ICMAT 2011)
    • Place of Presentation
      Singapore
    • Related Report
      2011 Annual Research Report
  • [Presentation] 電子線照射ZnOバルク単結晶の永続光伝導:二段階光照射効果2010

    • Author(s)
      尾賀孝宏
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth and Raman scattering ofdisordered Li8GeN4、2010

    • Author(s)
      H. Aoyama, Y. Suzuki, K. Kuriyama, K.Kushida
    • Organizer
      第16回結晶成長国際会議
    • Place of Presentation
      中国・北京
    • Year and Date
      2010-08-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Growth and some physical properties ofβandγ-Li7VN4containing isolated VN4tetrahedra2010

    • Author(s)
      Y. Suzuki, K. Kuriyama, K. Kushida
    • Organizer
      第16回結晶成長国際会議
    • Place of Presentation
      中国・北京
    • Year and Date
      2010-08-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Growth and Raman scattering of disordered Li_8GeN_42010

    • Author(s)
      H.Aoyama
    • Organizer
      第16回結晶成長国際会議
    • Place of Presentation
      中国・北京
    • Year and Date
      2010-08-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth and some physical properties of β and γ-Li_7VN_4 containing isolated VN_4 tetrahedra2010

    • Author(s)
      Y.Suzuki
    • Organizer
      第16回結晶成長国際会議
    • Place of Presentation
      中国・北京
    • Year and Date
      2010-08-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Thermally stimulated current studies on electron-irradiated single crystal ZnO bulk : Dual light illumination effect2010

    • Author(s)
      T.Oga
    • Organizer
      第30回半導体物理学国際会議
    • Place of Presentation
      韓国・ソウル
    • Year and Date
      2010-07-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Evaluation of carbon interstitial in C-ion implanted ZnO bulk single crystals by a Rutherford backscattering study : An origin of low resistivity2010

    • Author(s)
      Y.Izawa
    • Organizer
      第30回半導体物理学国際会議
    • Place of Presentation
      韓国・ソウル
    • Year and Date
      2010-07-29
    • Related Report
      2010 Annual Research Report

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Published: 2010-08-23   Modified: 2019-07-29  

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