Study on band-controlled semiconductor photocatalysts based on anion-doping in Fe- or Cu-based oxides
| Project/Area Number |
22550188
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic industrial materials
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| Research Institution | Toyota Central R&D Lab., Inc. |
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Principal Investigator |
MORIKAWA Takeshi 株式会社豊田中央研究所, 先端研究センター 光エネルギー貯蔵プログラム, 主席研究員 (70394666)
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| Co-Investigator(Renkei-kenkyūsha) |
ARAI Takeo 株式会社豊田中央研究所, 光エネルギー貯蔵プログラム, 研究員 (70375145)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | p 型半導体 / スパッタリング / 光触媒 / 酸化鉄 / 酸化銅 / 光電流 / 半導体 / 可視光 / エネルギー変換 / 窒素ドープ / 酸化タンタル / 触媒・化学プロセス / 無機工業化学 / p型半導体 |
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| Research Abstract |
A p-type N-doped α-Fe_2O_3 was developed by magnetron sputtering of a Fe_2O_3 target in a plasma containing N2 and Ar, followed by postannealing. Photoelectrochemical measurement under visible light irradiation showed that N- Fe_2O_3 exhibits a typical cathodic photocurrent originated from the p-type conduction. Furthermore, the photoactivity was enhanced by codoping of Zn. N,Zn-codoped Fe_2O_3, a p-type semiconductor with a band gap of 2.0 eV, was developed by cosputtering of Fe_2O_3 and ZnO in a plasma mixture of N_2 and Ar, followed by post-annealing. N,Zn- Fe_2O_3 showed a very high photocurrent, most likely originating from a higher concentration of acceptors than those of N- and Zn- Fe_2O_3.
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Report
(4 results)
Research Products
(18 results)
