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Study on band-controlled semiconductor photocatalysts based on anion-doping in Fe- or Cu-based oxides

Research Project

Project/Area Number 22550188
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic industrial materials
Research InstitutionToyota Central R&D Lab., Inc.

Principal Investigator

MORIKAWA Takeshi  株式会社豊田中央研究所, 先端研究センター 光エネルギー貯蔵プログラム, 主席研究員 (70394666)

Co-Investigator(Renkei-kenkyūsha) ARAI Takeo  株式会社豊田中央研究所, 光エネルギー貯蔵プログラム, 研究員 (70375145)
Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywordsp 型半導体 / スパッタリング / 光触媒 / 酸化鉄 / 酸化銅 / 光電流 / 半導体 / 可視光 / エネルギー変換 / 窒素ドープ / 酸化タンタル / 触媒・化学プロセス / 無機工業化学 / p型半導体
Research Abstract

A p-type N-doped α-Fe_2O_3 was developed by magnetron sputtering of a Fe_2O_3 target in a plasma containing N2 and Ar, followed by postannealing. Photoelectrochemical measurement under visible light irradiation showed that N- Fe_2O_3 exhibits a typical cathodic photocurrent originated from the p-type conduction. Furthermore, the photoactivity was enhanced by codoping of Zn. N,Zn-codoped Fe_2O_3, a p-type semiconductor with a band gap of 2.0 eV, was developed by cosputtering of Fe_2O_3 and ZnO in a plasma mixture of N_2 and Ar, followed by post-annealing. N,Zn- Fe_2O_3 showed a very high photocurrent, most likely originating from a higher concentration of acceptors than those of N- and Zn- Fe_2O_3.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (18 results)

All 2013 2012 2011 2010

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (10 results) (of which Invited: 1 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Photoactivity of p-Type α-Fe2O3 Induced by Anionic/Cationic Codoping of N and Zn2013

    • Author(s)
      T. Morikawa, T. Arai, T. Motohiro
    • Journal Title

      Appl. Phys. Express

      Volume: 6 Pages: 41201-41201

    • NAID

      210000136543

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photoactivity of p-Type α-Fe2O3 Induced by Anionic/Cationic Codoping of N and Zn2013

    • Author(s)
      Takeshi Morikawa
    • Journal Title

      Appl. Phys. Express

      Volume: 6 Issue: 4 Pages: 41201-41201

    • DOI

      10.7567/apex.6.041201

    • NAID

      210000136543

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] p-type conduction induced by N-doping in α-Fe2O32011

    • Author(s)
      T. Morikawa, K. Kitazumi, N. Takahashi, T. Arai, T. Kajin
    • Journal Title

      Applied Physics Letters

      Volume: 98 Pages: 242108-1

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] p-type conduction induced by N-doping in α-Fe_2O_32011

    • Author(s)
      T.Morikawa, K.Kitazumi, N.Takahashi, T.Arai, T.Kajino
    • Journal Title

      Applied Physics Letters

      Volume: 98 Issue: 24

    • DOI

      10.1063/1.3599852

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] Photoelectrochemical water splitting and CO2 reduction using p-type N-doped α-Fe2O32012

    • Author(s)
      T. Morikawa, T. Arai, et al.
    • Organizer
      IPS-19
    • Place of Presentation
      California Institute of Technolog
    • Year and Date
      2012-07-29
    • Related Report
      2012 Final Research Report
  • [Presentation] Solar CO2 Reduction Conjugated with H2O Oxidation Utilizing Semiconductor/Metal ‐Complex Hybrid2012

    • Author(s)
      T. Morikawa
    • Organizer
      The International Symposium on Photocatalysis
    • Place of Presentation
      京都大学(招待講演)
    • Year and Date
      2012-07-19
    • Related Report
      2012 Final Research Report
  • [Presentation] Solar CO2 Reduction Conjugated with H2O Oxidation Utilizing Semiconductor/Metal‐Complex Hybrid2012

    • Author(s)
      Takeshi Morikawa
    • Organizer
      The International Symposium on Photocatalysis
    • Place of Presentation
      京都大学 吉田キャンパス
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Photoelectrochemical water splitting and CO2 reduction using p-type N-doped α-Fe2O32012

    • Author(s)
      Takeshi Morikawa
    • Organizer
      IPS-19
    • Place of Presentation
      California Institute of Technology
    • Related Report
      2012 Annual Research Report
  • [Presentation] p-type conduction in N-doped α-Fe2O3 for solar fuel generation2011

    • Author(s)
      T. Morikawa, S. Sato, T. Arai, T. Kajino
    • Organizer
      2011 MRS Fall Meeting
    • Place of Presentation
      Boston
    • Year and Date
      2011-11-29
    • Related Report
      2012 Final Research Report
  • [Presentation] p-type conduction in N-doped α-Fe_2O_3 for solar fuel generation2011

    • Author(s)
      T.Morikawa, S.Sato, T.Arai, T.Kajino
    • Organizer
      2011 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center, Boston
    • Year and Date
      2011-11-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Visible -light -induced selective photochemical and photoelectrochemical CO2 reduction utilizing semiconductor/metal-complex hybrid photocatalysts2011

    • Author(s)
      T. Morikawa, et al.
    • Organizer
      Gordon Research Conference /Chemical Reactions at Surfaces
    • Place of Presentation
      Ventura
    • Year and Date
      2011-02-09
    • Related Report
      2012 Final Research Report
  • [Presentation] Visible-light-induced selective photochemical and photoelectrochemical C0_2 reduction utilizing semiconductor/metal-complex hybrid photocatalysts2011

    • Author(s)
      T.Morikawa, S.Sato, S.Saeki, T.Kajino, T.Motohiro
    • Organizer
      Gordon Research Conference /Chemical Reactions at Surfaces
    • Place of Presentation
      Ventura Beach Marriott Ventura, CA, USA
    • Year and Date
      2011-02-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] P-type conduction in N-doped N-Cu_2O, N-ZnO and N-Ta_2O_5 semiconductors essential for Photocatalytic Solar Fuel Production2010

    • Author(s)
      T.Morikawa, S.Saeki, S.Sato, T.Kajino, T.Motohiro
    • Organizer
      Zing Conference-Solar Fuels/Photochemistry Conference 2010
    • Place of Presentation
      Ocean-Coral, Cancun, Mexico
    • Year and Date
      2010-12-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] P-type conduction in N-doped N-Cu2O, N-ZnO and N-Ta2O5 semiconductors essential for Photocatalytic Solar Fuel Production2010

    • Author(s)
      T. Morikawa, et al.
    • Organizer
      Zing Conference - Solar Fuels/ Photochemistry Conference 2010
    • Place of Presentation
      Cancun
    • Related Report
      2012 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体材料並びにそれを用いた光触媒体、光電極及び太陽電池2011

    • Inventor(s)
      森川健志、荒井健男、梶野勉
    • Industrial Property Rights Holder
      株式会社豊田中央研究所
    • Industrial Property Number
      2011-122317
    • Filing Date
      2011-05-31
    • Related Report
      2012 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体材料並びにそれを用いた光触媒体、光電極及び太陽電池2011

    • Inventor(s)
      森川健志, 荒井健男, 梶野勉
    • Industrial Property Rights Holder
      株式会社豊田中央研究所
    • Industrial Property Number
      2011-122317
    • Filing Date
      2011-05-31
    • Related Report
      2011 Annual Research Report
  • [Patent(Industrial Property Rights)] 光応答性材料及びその製造方法2010

    • Inventor(s)
      森川健志、荒井健男、梶野勉
    • Industrial Property Rights Holder
      株式会社豊田中央研究所
    • Industrial Property Number
      2010-273100
    • Filing Date
      2010-12-08
    • Related Report
      2012 Final Research Report
  • [Patent(Industrial Property Rights)] 光応答性材料及びその製造方法2010

    • Inventor(s)
      森川健志 荒井健男 梶野勉
    • Industrial Property Rights Holder
      株式会社豊田中央研究所
    • Industrial Property Number
      2010-273100
    • Filing Date
      2010-12-08
    • Related Report
      2010 Annual Research Report

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Published: 2010-08-23   Modified: 2019-07-29  

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