InP-based room-temperature semiconductor spintronic materials and devices
| Project/Area Number |
22560005
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagaoka University of Technology |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
ISHIBASHI Takayuki 長岡技術科学大学, 工学部, 准教授 (20272635)
TOYOTA Hideyuki 長岡技術科学大学, 工学部, 技術職員 (90467085)
JINBO Yoshio 長岡技術科学大学, 工学部, 教務職員 (10134975)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | スピントロ二クス / 半導体スピントロニクス / 結晶工学 / 結晶成長 / 界面・界面物性 / 半導体 |
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| Research Abstract |
Ferromagnetic semiconductors have been recently attracted world wide scientific and technological interest because of possible application in spintronic devices. Two-major criteria such as room-temperature ferromagnetism and process compatibility for semiconductor spintronic materials are required from a practical point of view. Mn-doped ZnSnAs2 thin films were grown on InP substrates by molecular beam epitaxy (MBE). Heteroepitaxial growth of InGaAs and InAlAs layers on ZnSnAs2 / InP using low-temperature MBE is investigated in order to produce InP-based spintronic devices. We have successfully grown MnAs/ZnSnAs2/ZnSnAs2:Mn trilayer heterostructures on InP(001) substrates. The current-in-plane giant magnetoresistance (CIP-GMR) was clearly observed in magnetoresistance measurements in current-in-plane geometry.
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Report
(4 results)
Research Products
(67 results)
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[Journal Article] e-2011
Author(s)
N.Uchitomi, J.T.Asubar, H.Oomae, H.Endoh, Y.Jinbo
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Journal Title
Journal of SurfaceScience and NanotechnologyFerromagnetic ZnSnAs2:Mn ChalcopyriteSemiconductors for In P-based pintronics 9
Volume: 95
Pages: 102-102
Related Report
Peer Reviewed
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