| Project/Area Number |
22560007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
NAKAGAWA Kiyokazu 山梨大学, 大学院・医学工学総合研究部, 教授 (40324181)
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| Co-Investigator(Kenkyū-buntansha) |
YAMANAKA Junji 山梨大学, 学工学総合研究部, 准教授 (20293441)
SATO Tetsuya 山梨大学, 学工学総合研究部, 准教授 (60252011)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 半導体 / 固相成長 / プラズマ加熱 / 選択加熱 / 薄膜トランジスタ / 結晶成長 / 電子材料 / 電子デバイス / シリコン多結晶 / プラズマ |
|---|
| Research Abstract |
We have performed technology development to enable the selectiveand rapid heating of Ge and the transition metals using irradiation of hydrogen atoms formedby microwave excitation. We confirmed polycrystallization of amorphous Ge films depositedon glass substrates by the hydrogen atoms irradiation of around 60 seconds. In the caseof amorphous Si films which were confirmed not to be heated with hydrogen atoms, wedeposited tungsten atoms on parts of the amorphous Si films and performedpolycrystallization of the films by the lateral solid-phase growth. We have fabricatedfield effect transistors on the polycrystalline films and realized effectiveness mobilityof ～40 cm2/Vs.
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