State and transfer of excitons localized in semiconductor nanostructure
| Project/Area Number |
22560008
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 励起子 / 多重量子井戸 / 希薄磁性半導体 / スピン偏極の外場変調 / 励起子移動現象 / MBE / スピン偏極 / 磁性半導体 |
|---|
| Research Abstract |
Inter-well transfer of excitons was studied by using multi quantum well (MQW) structures consisting of a diluted magnetic semiconductor (DMS) well and nonmagnetic semiconductor (NMS) wells. Exciton transfer from DMS well to NMS well was confirmed by observing degree of circular polarization of photoluminescence from NMS well. Exciton transfers from DMS well to the next NMS well and to the next-but-one NMS well were separately observed in MQW samples with a novel structure.
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Report
(4 results)
Research Products
(35 results)
