| Project/Area Number |
22560016
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SUGIMOTO Yoshimasa 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主席研究員 (60415784)
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| Co-Investigator(Kenkyū-buntansha) |
MANO Takaaki 独立行政法人物質・ 材料研究機構, 主任研究員 (60391215)
OZAKI Nobuhiko 和歌山大学, システム工学部精密物質学科, 准教授 (30344873)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | エピタキシャル成長 / 量子ドット(QD) / MBE / 量子ドット / 二層積層法 / 窒素添加 / MBE成長 / 窒素ドーピング / 近接2層構造 / 1.55ミクロン発光波長 |
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| Research Abstract |
Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.
Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.
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