Optical absorption spectra of semiconductor films measured bya photothermal technique with eliminating a scattering light

• Project/Area Number: 22560024
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: University of Miyazaki
• Principal Investigator: IKARI Tetsuo 宮崎大学, 工学部, 教授 (70113214)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 光熱変換スペクトル / 半導体薄膜材料 / 光散乱 / 半導体薄膜 / 太陽電池デバイス / 非発光電子遷移

Research Abstract

Optical absorption spectra of highly non-uniform samples weresuccessfully observed by using our developed piezoelectric photothermal spectroscopy interms of non-radiative transitions of photo excited carriers. The results showed that thepresent method provided an important knowledge for discussing the electronic structuresof nano-structured semiconductor materials.

Research Products

• [Journal Article] Study of bandgap energies of Cu(In,Ga)Se2 thinfilms grown by a sequential evaporation methodusing piezoelectric photothermal spectroscopy (2012)
  • Author(s): T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi and T. Ikari
  • Journal Title: Japanese Journal of Applied Physics 51 Volume: 51 Issue: 7S Pages: 4-4
  • DOI: 10.1143/jjap.51.07ga07
  • NAID: 210000140902
  • Peer Reviewed
• [Journal Article] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature dependence ofpiezoelectric photothermal signal (2012)
  • Author(s): K. Kashima, A. Fukuyama, Y. Nakano, M.Inagaki, H. Suzuki, M. Yamaguchi, and T. Ikari
  • Journal Title: Materials Science Forum 725 Volume: 725 Pages: 93-96
  • DOI: 10.4028/www.scientific.net/msf.725.93
  • Peer Reviewed
• [Journal Article] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • Author(s): A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii,M. Sugiyama, Y. Nakano and T. Ikari
  • Journal Title: AIP Conference Proceedings 1477 Volume: 1477 Pages: 185-188
  • Peer Reviewed
• [Journal Article] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2012)
  • Author(s): A. Fukuyama, D. Ishibashi, Y. Sato, K. Sakai,H. Suzuki, K. Nishioka and T. Ikari
  • Journal Title: Journal of Non-Crystalline Solids 358 Volume: 358 Issue: 17 Pages: 2206-2208
  • DOI: 10.1016/j.jnoncrysol.2011.11.016
  • Peer Reviewed
• [Journal Article] Non-radiative carrier recombination mechanism in the InGaAs/GaAsP strain-balanced quantum well solar cells with different number of stacks by using a piezoelectric photothermal method (2012)
  • Author(s): A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii, M. Sugiyama, Y. Nakano and T. Ikari
  • Journal Title: AIP Conference Proceedings Volume: 1477 Pages: 185-188
  • Peer Reviewed
• [Journal Article] X-ray and photoluminescence properties of Sm3+ doped barium sulfide (2012)
  • Author(s): Maeda, K., Kawaida, N.,Tsudome, R., Sakai, K., Ikari, T..
  • Journal Title: Physica Status Solidi (C) Volume: 9(12) Issue: 12 Pages: 93-96
  • DOI: 10.1002/pssc.201200321
  • Peer Reviewed
• [Journal Article] Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy (2011)
  • Author(s): W. Ding, Y. Nakano, R. Yamamoto, K. Sakai,H. Nakazawa, A. Fukuyama, and T. Ikari
  • Journal Title: Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy Volume: 10 Pages: 66-70
  • DOI: 10.1016/j.egypro.2011.10.154
  • Peer Reviewed
• [Journal Article] Determination of exciton binding energy ofGaInNAs quantum well structures by piezoelectric photothermal spectroscopycompared with photoreflectance measurements (2011)
  • Author(s): K. Kashima, A. Fukuyama, K. Sakai, H.Yokoyama, M. Kondow, and T. Ikari
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 6S Pages: 06GH09-06GH09
  • DOI: 10.1143/jjap.50.06gh09
  • Peer Reviewed
• [Journal Article] Effect of silicon doping on the photoluminescenceand photoreflectance spectra of catalyst-freemolecular beam epitaxy-vapor liquid solid grownGaAs nanowires on (111) Si substrate (2011)
  • Author(s): A. Suzuki, A. Fukuyama, T. Ikari, Ji-HyunPaek, and M. Yamaguchi
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 6S Pages: 06GH08-06GH08
  • DOI: 10.1143/jjap.50.06gh08
  • Peer Reviewed
• [Journal Article] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2011)
  • Author(s): K. Sakai, Y. Hirashita, T. Aihara, A.Fukuyama,T. Ikari, K. Kukita, and S. Furukawa
  • Journal Title: Thin Solid Films Volume: 519 Issue: 17 Pages: 5760-5762
  • DOI: 10.1016/j.tsf.2010.12.205
  • Peer Reviewed
• [Journal Article] The study of bandgap energies of Cu(In, Ga)Se2thin films grown by a sequential evaporationmethod using a photothermal spectroscopyProc (2011)
  • Author(s): T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi, and T. Ikari
  • Journal Title: Ultrasonic Electronics Symposium Volume: vol. 32 Pages: 61-62
  • Peer Reviewed
• [Journal Article] Detection of Thermal Energy Loss of thephotoexcited Carriers in Polycrystalline Siliconp-n Junction Interface Region by a PiezoelectricPhotothermal Study (2010)
  • Author(s): H. Tamura, A. Fukuyama, K. Sakai, and T.Ikari
  • Journal Title: Proc. Ultrasonic Electronics Symposium Volume: vol. 31 Pages: 31-32
  • Peer Reviewed
• [Journal Article] Detection of Thermal Energy Loss of the photoexcited Carriers in Polycrystalline Silicon p-n Junction Interface Region by a Piezoelectric Photothermal Study (2010)
  • Author(s): H.Tamura, A.Fukuyama, K.Sakai, T.Ikari
  • Journal Title: Proc.Symposium on Ultrasonic Electronics Volume: 31
  • Peer Reviewed
• [Presentation] Non-radiative carrier recombination inInGaAs/GaAsP strain-balanced superlattice solarcel (2012)
  • Author(s): T. Aihara and T. Ikari
  • Organizer: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • Place of Presentation: Tampa, USA
• [Presentation] Piezoelectric photothermal spectra and carriernonradiative recombination in InGaAs/GaAsPsuperlattice structured solar cell (2012)
  • Author(s): T. Ikari and A. Fukuyama
  • Organizer: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • Place of Presentation: Tampa, USA
• [Presentation] The effect of substrate on the GaN on Si substrateby photoreflectance and photoluminescenceInt. (2012)
  • Author(s): A. Suzuki and T. Ikari
  • Organizer: Workshop on Nitride Semiconductors(IWN2012)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Photoluminescence and photoreflectance spectraof C60 and Si co-doped GaAs layers (2012)
  • Author(s): W. Ding and T. Ikari
  • Organizer: Int. Conf. on Diamond and Carbon Materials(ICDCM2012 or Diamond2012)
  • Place of Presentation: Granada, Spain
• [Presentation] Effect of Be doping on the optical properties ofcatalyst free MBE-VLS grown GaAs nanowireson Si (111) substrate (2012)
  • Author(s): A. Suzuki and T. Ikari
  • Organizer: Int. Conf. on Superlattices, Nanostructures, andNanodevices (icsnn 2012)
  • Place of Presentation: Dresden, Germany
• [Presentation] Effect of grain boundaries on the thermal andelectron diffusivity of multi-crystalline siliconinvestigated by a photothermal microscopy (2012)
  • Author(s): T. Ikari and D. Fournier
  • Organizer: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • Place of Presentation: Strasbourg, France
• [Presentation] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2012)
  • Author(s): W. Ding and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • Place of Presentation: Strasbourg, France
• [Presentation] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2012)
  • Author(s): A. Fukuyama and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • Place of Presentation: Strasbourg, France
• [Presentation] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • Author(s): Y. Nakano and T. Ikari
  • Organizer: 8th International Conf. on ConcentratingPhotovoltaic Systems (CPV-8)
  • Place of Presentation: Toledo, Spain
• [Presentation] Bandgap gradient of Cu(In,Ga)Se2 absorbing layer studied by piezoelectric photothermal and photoluminescence spectroscopies (2012)
  • Author(s): Wen Ding, Yutaro Motono, Takayuki Mori, Akio Suzuki, Toshiyuki Yamaguchi1, Atsuhiko Fukuyama, and Tetsuo Ikari
  • Organizer: EMRS (European Materials Research Society) Spring
  • Place of Presentation: Strasbourg, France
• [Presentation] Effect of grain boundaries on the thermal and electron diffusivity of multi-crystalline silicon investigated by a photothermal microscopy (2012)
  • Author(s): T. Ikari, A. Fukuyama, K. Nishioka, J. P. Roger, and D. Fournier
  • Organizer: EMRS (European Materials Research Society) Spring
  • Place of Presentation: Strasbourg, France
• [Presentation] Distribution of localized nitrogen atoms in GaAsN thin films grown by a Chemical Beam Epitaxy investigated by a photoreflectance spectroscopy (2012)
  • Author(s): Atsuhiko Fukuyama, Susumu Yamamoto, Akio Suzuki, Makoto Inagaki, Hidetoshi Suzuki, Masafumi Yamaguchi, and Tetsuo Ikari
  • Organizer: EMRS (European Materials Research Society) Spring
  • Place of Presentation: Strasbourg, France
• [Presentation] Piezoelectric Photothermal Spectra and carrier nonradiative recombination in InGaAs/GaAsP Super Lattice Structured Solar Cells (2012)
  • Author(s): T. Ikari, T. Aihara, Y. Nakano, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano.
  • Organizer: American Vacuum Society, 59th Int. Symposium
  • Place of Presentation: Tampa, FL USA
• [Presentation] Nonradiative Carrier Recombination in InGaAs/GaAsP Strain-Balanced Superlattice Solar Cells (2012)
  • Author(s): Taketo Aihara,, Y. Nakano, A. Fukuyama, Y. Wang , M. Sugiyama, Y. Nakano, and Testuo Ikari
  • Organizer: American Vacuum Society, 59th Int. Symposium
  • Place of Presentation: Tampa, FL USA
• [Presentation] Effects of growth method on localized state ofnitrogen atoms in GaAsN thin films (2011)
  • Author(s): S. Yamamoto7 and T. Ikari
  • Organizer: 21th International Photovoltaic Science andEngineering Conference (PVSEC-21)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature variation ofpiezoelectric photothermal signal amplitude14th International Conference on Defects -Recognition (2011)
  • Author(s): K. Kashima and T. Ikari
  • Organizer: Imaging and Physics inSemiconductors (DRIP14)
  • Place of Presentation: Miyazaki, Japan
• [Presentation] Temperature dependence of the optical gap ofdiamond-like carbon films by piezoelectricphotothermal and photoluminescencespectroscopies (2011)
  • Author(s): Wen Ding, and T. Ikari
  • Organizer: 22nd European Conference on Diamond,Diamond-Like Materials, Carbon Nanotubes andNitrides (Diamond 2011)
  • Place of Presentation: Garmisch-Partenkirchen, Germany
• [Presentation] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2011)
  • Author(s): A. Fukuyama and T. Ikari
  • Organizer: 24th International Conference on Amorphous andNano-Crystallie Semiconductors (ICANS24)
  • Place of Presentation: Nara, Japan
• [Presentation] Photoluminescence and photoreflectance spectraof silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • Author(s): A. Suzuki and T. Ikari
  • Organizer: 19th Conference on Modulated SemiconductorStructures (MSS15) joint with internationalconference on Electric Properties ofTow-Dimensional Electron Systems(EP2DS19/MSS15)
  • Place of Presentation: Tallahassee, Florida, USA
• [Presentation] Photoluminescence studies of vacancy complex inp-type Li and Ni co-doped ZnO samples grownby a pulsed laser deposition (2011)
  • Author(s): K. Sakai and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Temperature dependence of the optical gap ofdiamond-like carbon films by using apiezoelectric photothermal spectroscopy (2011)
  • Author(s): W. Ding and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Investigation of deep trap centers by atemperature variation of the signal amplitude inthe piezoelectric photothermal spectra (2011)
  • Author(s): K. Kashima and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Photoluminescence and photoreflectance studiesof a silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • Author(s): A. Suzuki and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2011)
  • Author(s): S. Yamamoto and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2011)
  • Author(s): T. Mori and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • Place of Presentation: Nice, France
• [Presentation] Investigation of deep trap centers by a temperature variation of the signal amplitude in the piezoelectric photothermal spectra (2011)
  • Author(s): Koshiro Kashima, Susumu Yamamoto, Yosuke Nakano, Kentaro Sakai, Hidetoshi Suzuki, Makoto Inagaki, Masafumi Yamaguchi, Atsuhiko Fukuyama, Tetsuo Ikari
  • Organizer: EMRS (European Materials Research Society) Spring meeting, 2011
  • Place of Presentation: Nice, France
• [Presentation] Photoluminescence and photothermal spectra of Cu(In,Ga)Se2 thin films by a sequential evaporation method (2011)
  • Author(s): Takayuki Mori, Akio Suzuki, Yutarou Motono, Wen Ding, Atsuhiko Fukuyama, Toshiyuki Yamaguchi, Tetsuo Ikari
  • Organizer: EMRS Spring meeting, 2011
  • Place of Presentation: Nice, France
• [Presentation] Effect of N composition on temperature dependence of band gap energies of GaAsN thin films grown by Chemical Beam Epitaxy (2011)
  • Author(s): Susumu Yamamoto, Koshiro Kashima, Akio Suzuki, Hidetoshi Suzuki, Atsuhiko Fukuyama, Makoto Inagaki, Masafumi Yamaguchi, Tetsuo Ikari
  • Organizer: EMRS Spring meeting, 2011
  • Place of Presentation: Nice, France
• [Presentation] Photoluminescence and photoreflectance studies of a silicon related impurity levels in catalyst free MBE-VLS grown GaAs nanowires on (111)Si substrate (2011)
  • Author(s): Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek, Masahito Yamaguchi
  • Organizer: EMRS Spring meeting, 2011
  • Place of Presentation: Nice, France
• [Presentation] Temperature dependence of the optical gap of diamond-like carbon films investigated by a piezoelectric photothermal spectroscopy (2011)
  • Author(s): Ding, W., Nakano, Y., Yamamoto, R., Sakai, K., Nakazawa, H., Fukuyama, A., Ikari, T.
  • Organizer: Int.Conf.Diamond and Carbon Materilas, 20
  • Place of Presentation: Garmisch-Partenkirchen, Germany
• [Presentation] プラズマCVD法で成膜したダイヤモンド様炭素の光学ギャップの温度依存性の研究 (2011)
  • Author(s): 中野陽介, 丁文, 三浦創史, 境健太郎, 福山敦彦, 碇哲雄
  • Organizer: 応用物理学会学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川
• [Presentation] 非発光再結合検出によるスパッタ法で製膜させたSi基板上SiGe膜の光学的評価 (2011)
  • Author(s): 河野洋平、政田清孝、福山敦彦、碇哲雄
  • Organizer: 応用物理学会学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川
• [Presentation] Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst Free MBE-VLS Grown GaAs Nanowires (2010)
  • Author(s): Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek
  • Organizer: MNC2010(International Microprocesses and Nanotechnology Conferenc)
  • Place of Presentation: Kokura, JAPAN
  • Year and Date: 2010-11-12
• [Presentation] Determination of exciton binding energy of GaInNAs Quantum wells by apiezoelectric photo-thermal spectroscopy comparing with a photo-reflectance and a photoluminescence measurements (2010)
  • Author(s): K.Kashima, A.Fukuyama, K.Sakai, H.Yokoyama, M.Kondow, T.Ikari
  • Organizer: MNC2010(International Microprocesses and Nanotechnology Conferenc)
  • Place of Presentation: Kokura, JAPAN
  • Year and Date: 2010-11-12
• [Presentation] Effect of rapid thermal annealing on well width dependences of exciton binding energy in GaInNAs/GaAs single quantum wells (Oral) (2010)
  • Author(s): T.Ikari, H.Yokoyama, K.Sakai, A.Fukuyama, M.Kondow
  • Organizer: E-MRS(European Materials Society Symposium)
  • Place of Presentation: Strasbourg, FRANCE
  • Year and Date: 2010-06-11
• [Presentation] Determination of the band gap and its exciton binding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and a photo-reflectance spectroscopy (Oral) (2010)
  • Author(s): A.Fukuyama, T.Ikari, M.Yano, K.Sakai, H.Yokoyama, M.Kondow
  • Organizer: E-MRS(European Materials Society Symposium)
  • Place of Presentation: Strasbourg, FRANCE
  • Year and Date: 2010-06-11
• [Presentation] Effect of the molecular weight of a polyethylene glycol on the photoluminescence spectra of porous TiO_2 films for dye-sensitized solar cells (2010)
  • Author(s): K.Sakai, Y.Hirashita, T.Aihara, A.Fukuyama, T.Ikari, S.Furukawa
  • Organizer: E-MRS(European Materials Society Symposium)
  • Place of Presentation: Strasbourg, FRANCE
  • Year and Date: 2010-06-11
• [Presentation] Low-temperature photoluminescence ofphosphorous-doped ZnO nanowires synthesizedby nanoparticle-assisted pulsed-laser deposition (2010)
  • Author(s): K. Sakai and T. Ikari
  • Organizer: Premier Technical Conference of IEEE Region 10(TENCON 2010)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2010)
  • Author(s): K. Sakai and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • Place of Presentation: Strasbourg, France
• [Presentation] Effect of rapid thermal annealing on well widthdependences of exciton binding energy inGaInNAs/GaAs single quantum wells (2010)
  • Author(s): T. Ikari and M. Kondow
  • Organizer: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • Place of Presentation: Strasbourg, France
• [Presentation] Determination of the band gap and its excitonbinding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and aphoto-reflectance spectroscop (2010)
  • Author(s): A. Fukuyama and T. Ikari
  • Organizer: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • Place of Presentation: Strasbourg, France
• [Presentation] Detection of Thermal Energy Loss of the Photo-excited Carriers in Polycrystalline Silicon p-n Junction by a Piezoelectric Photothermal Study (2010)
  • Author(s): Hitoshi Tamura, Atsuhiko Fukuyama, Tetsuo Ikari, Sakai Kentaro
  • Organizer: USE(超音波エレクトニクスの基礎と応用に関するシンポジウム)
  • Place of Presentation: 明治大学、東京
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