| Project/Area Number |
22560029
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
MIYASHITA Atsumi 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究副主幹 (00354944)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 炭化ケイ素半導体 / 界面物理 / 第一原理計算 / 界面欠陥 / 分子動力学 |
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| Research Abstract |
Recent years, it is reported that a high channel mobility is obtained in (11-20) face (A-face) of SiC which is used as trench sidewall of trench-gate MOS- FETs which uses 4H-SiC(0001) face (Si-face) for the substrate. To examine the reason for a high channel mobility at the interface between the amorphous SiO_2 (a-SiO_2) layers and the A-face SiC substrate, we generated the a-SiO_2/4H-SiC(11-20) atomic interfacial structure model with the computer simulation and evaluated the atomic and the electronic structure of the interface. The theoretical A-face model with rough interface was generated after the heating and quenching process. Some of the defect levels appeared in the bandgap in the Si-face model were not generated in A-face model. Especially, in Si-face model, the defect level, which is originated in the expanding Si-C bond, generated with Si in the SiC layer decreases the channel mobility very much because the defect has energy level just below the conduction band of SiC. On the other hand, in A-face model, it is considered that the distortion of the defect is reduced easily because Si-C bond is on the surface of the SiC layer. Therefore, the defect level did not appear in the bandgap in A-face model. It is suggested that the cause of high mobility on A-face SiC interface is a lack of this defect level.
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