| Project/Area Number |
22560110
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
INAGAKI Kouji 大阪大学, 大学院・工学研究科, 助教 (50273579)
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| Co-Investigator(Renkei-kenkyūsha) |
MORIKAWA Yoshitada 大阪大学, 大学院・工学研究科, 教授 (80358184)
YAMAUCHI Kazuto 大阪大学, 大学院・工学研究科, 教授 (10174575)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 超精密加工 / 触媒援用加工法 / ワイドバンドギャップ半導体 / SiC / GaN / エッチング / 第一原理計算 / 触媒援用加工 / 解離吸着 / 触媒 / 反応バリア / 触媒援用化学エッチング / CARE / Pt / HF / 第一原理分子動力学シミュレーション / 活性化エネルギー / NEB法 |
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| Research Abstract |
In this research, based on first-principles molecular-dynamicscalculation, SiC and GaN etching by highly-concentrated HF solution and pure water are analyzed, respectively. In both cases, dissociative adsorption reactions are simulated as an initial key stage of etching reaction. Reaction barriers for the dissociative adsorption of HF molecule on Platinum surface are clarified to be important to reduce barrier.
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