Project/Area Number |
22560294
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Shizuoka University |
Principal Investigator |
|
Co-Investigator(Renkei-kenkyūsha) |
NAKAMURA Tamotsu 静岡大学, 工学部, 教授 (70023322)
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
|
Keywords | シリサイド / 熱電素子 / 結晶成長 / 自然エネルギー / ナノ構造制御 / 酸化 / メカニカルアロイング / 焼結体 |
Research Abstract |
IV based compound semiconductors were grown by mechanical alloying technique and other methods. The crystalline structure and their solid state properties of the compound are were characterized. Especially, the crystalline structure of cubic-CaxSi (x~4) was mainly examined by XRD, STEM with EDS, and its solid state properties were characterized by IR transmission spectrum, XPS, TG-DTA, Raman spectroscopy. It was demonstrated that new solid state properties of the compound were obtained. In addition, the temperature dependence of Seebeck coefficient and Resistivities of the compound was measured for the thermoelectric application. Moreover, the structural modifications are under investigation using the following nanostructure fabrications; metastable hexagoal-MoSi2nanosheets, CrSi2 nanowire bundle and dendrite structures, Mg2Ge, Mg2SiGe rods, and so on.
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