Study of Quasi-ballistic Electron Transport in Silicon NanodotArray

• Project/Area Number: 22560296
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: MORI Nobuya 大阪大学, 大学院・工学研究科, 准教授 (70239614)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 半導体 / シリコン / ナノ結晶 / 量子輸送 / ミュレーション / トンネル / 弾道輸送 / インパクトイオン化 / シミュレーション

Research Abstract

A model to describe the underlying physics of high-energy ballistic electron emission from a porous silicon diode consisting of nanometer-size Si nanodot (SiND) is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. The model is extended to be applicable to metal-semiconductor diodes consisting of SiND films. Strain effects on avalanche multiplication in a one-dimensional SiND array have been theoretically studied. Larger carrier multiplication factor is observed under compressive strain condition. Impacts of atomic disorder on avalanche multiplication have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

Research Products

• [Journal Article] Disorder- induced enhancement of avalanche multiplication in a silicon nanodot array (2013)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Journal Title: Japanese Journal of Applied Physics Volume: 52
• [Journal Article] Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array (2013)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 4S Pages: 04CJ04-04CJ04
  • DOI: 10.7567/jjap.52.04cj04
  • Peer Reviewed
• [Journal Article] Strain effects on avalanche multiplication in a silicon nanodot array (2012)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
  • Journal Title: Japanese Journal of Applied Physic Volume: 51
  • NAID: 210000140546
• [Journal Article] Strain effects on avalanche multiplication in a silicon nanodot array (2012)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 4S Pages: 04DJ01-04DJ01
  • DOI: 10.1143/jjap.51.04dj01
  • NAID: 210000140546
  • Peer Reviewed
• [Journal Article] Strain effects on avalanche multiplication in a silicon nanodot array (2012)
  • Author(s): N.Mori, H Minari, S.Uno, H.Mizuta, N.Koshida
  • Journal Title: Japanese Journal of Applied Physics Volume: 51(印刷中)
  • NAID: 210000140546
  • Peer Reviewed
• [Journal Article] Theory of quasiballistic transport through nanocrystalline silicon dots (2011)
  • Author(s): N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida
  • Journal Title: Applied Physics Letters Volume: 98
• [Journal Article] Theory of quasiballistic transport through nanocrystalline silicon dots (2011)
  • Author(s): N.Mori, H.Minari, S.Uno, H.Mizuta, N.Koshida
  • Journal Title: Applied Physics Letters Volume: 98
  • Peer Reviewed
• [Presentation] Ballistic electron emission from nanostructured Si dionde and its applications (2013)
  • Author(s): N. Koshida, N. Ikegami, A. Kojima, R. Mentek, B. Gelloz, and N. Mori
  • Organizer: 8th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Ballistic Electron Emission from Nanostructured Si Dionde and Its Applications (2013)
  • Author(s): N. Koshida, N. Ikegami, A. Kojima, R. Mentek, B. Gelloz, and N. Mori
  • Organizer: 8th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Fukuoka, Japan
  • Invited
• [Presentation] Liquid-phase deposition of thin Si and Ge films based on ballistic electroreduction (2012)
  • Author(s): T. Ohta, R. Mentek, B. Gelloz, N. Mori, and N. Koshida
  • Organizer: 222nd Meeting of the Electrochemical Society
  • Place of Presentation: Hawaii, USA
• [Presentation] Disorder- induced enhancement of impact ionization rate in silicon nanodots (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Organizer: International Union of Materials Research Societies - International Conference on Electronic Materials 2012
  • Place of Presentation: Yokohama, Japan
• [Presentation] Disorder- induced enhancement of avalanche multiplication in a silicon nanodot array (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto, Japan
• [Presentation] Effects of atomic disorder on impact ionization rate in silicon nanodots (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T.Watanabe, and N. Koshida
  • Organizer: 31st International Conference on the Physics of Semiconductors
  • Place of Presentation: Zurich, Switzerland
• [Presentation] 乱れたナノ結晶シリコンにおけるインパクトイオン化率 (2012)
  • Author(s): 森 伸也,富田将典,三成英樹,渡邉孝信,越田信義
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] Effects of Atomic Disorder on Impact Ionization Rate in Silicon Nanodots (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Organizer: 31st International Conference on the Physics of Semiconductors
  • Place of Presentation: Zurich, Switzerland
• [Presentation] Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto, Japan
• [Presentation] Disorder-Induced Enhancement of Impact Ionization Rate in Silicon Nanodots (2012)
  • Author(s): N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida
  • Organizer: International Union of Materials Research Societies - International Conference on Electronic Materials 2012
  • Place of Presentation: Yokohama, Japan
• [Presentation] Liquid-Phase Deposition of Thin Si and Ge Films Based on Ballistic Electroreduction (2012)
  • Author(s): T. Ohta, R. Mentek, B. Gelloz, N. Mori, and N. Koshida
  • Organizer: 222nd Meeting of the Electrochemical Society
  • Place of Presentation: Hawaii, USA
• [Presentation] Strain effects on avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N.Mori, H Minari, S.Uno, H.Mizuta, N.Koshida
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: ウインク愛知
  • Year and Date: 2011-09-29
• [Presentation] Impact ionization and avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N.Mori, H Minari, S.Uno, H.Mizuta, N.Koshida
  • Organizer: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
  • Place of Presentation: Santa Barbara, California, USA
  • Year and Date: 2011-08-09
• [Presentation] Strain effects on avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N. Mori, H Minari, S. Uno, H. Mizuta, and N. Koshida
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: Nagoya, Japan
• [Presentation] ナノシリコン列における光励起キャリアの雪崩増倍 (2011)
  • Author(s): 森 伸也,三成英樹,宇野重康, 水田 博,越田信義
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
• [Presentation] Impact ionization and avalanche multiplication in a silicon nanodot array (2011)
  • Author(s): N. Mori, H Minari, S. Uno, H. Mizuta, and N. Koshida
  • Organizer: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
  • Place of Presentation: Santa Barbara, California, USA.