| Project/Area Number |
22560299
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TANAKA Tooru 佐賀大学, 工学系研究科, 准教授 (20325591)
SAITO Katsuhiko 佐賀大学, シンクロトロン応用研究センター, 助教 (40380795)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | ZnTe系材料 / ヘテロ接合 / 純緑色LED / 結晶評価 / アニ-ル効果 / 純緑色ＬＥＤ / アニ－ル効果 / アニール効果 |
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| Research Abstract |
For ZnTe and Zn_Mg_xTe, the main results on p-type doping by means of metalorganic vapor phase epitaxy, annealing treatment in nitrogen gas flow and so on were briefly summarized as follows. We reviewed our recent research results on the development of ZnTe LEDs. For ZnTe, the electrical and optical properties versus source transport rate, VI/II transport rate ratio and so on have been clarified with and without annealing treatment. P-type doping of Zn_Mg_xTe layer with a high carrier concentration has been obtained by using tris-dimethylaminophosphorus, similar to the case of ZnTe layer. The post-annealing is very effective in obtaining p-type conductive Zn_Mg_xTe for the layer grown under a Te-poor condition. On the other hand, Zn_Mg_xTe layer is characterized by a high compensation ratio for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers.
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